A5101911212- Plasma Diagnostics and Applications
- Radio Frequency Integrated Circuit Design
- Metal and Thin Film Mechanics
- Plasma Applications and Diagnostics
- ZnO doping and properties
- Advancements in PLL and VCO Technologies
- Semiconductor materials and devices
- Laser-induced spectroscopy and plasma
- Analog and Mixed-Signal Circuit Design
- Thin-Film Transistor Technologies
- Copper Interconnects and Reliability
- Advanced Power Amplifier Design
- Diamond and Carbon-based Materials Research
- Silicon Nanostructures and Photoluminescence
- Molecular Biology Techniques and Applications
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Gene expression and cancer classification
- High voltage insulation and dielectric phenomena
- Full-Duplex Wireless Communications
- Robotic Mechanisms and Dynamics
- Forensic and Genetic Research
- Privacy-Preserving Technologies in Data
- Electromagnetic Compatibility and Noise Suppression
- GaN-based semiconductor devices and materials
Korea Institute of Fusion Energy
2010-2023
Supreme Prosecutors Office of the Republic of Korea
2012
Kwangwoon University
2005-2011
SK Communications (South Korea)
2007
Hanyang University
2001
A 54-862-MHz single-chip CMOS transceiver with a single LC voltage-controlled oscillator (VCO) fractional- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</i> synthesizer is developed for TV-band white-space communications and cognitive radio applications. The based on single-conversion zero-IF architecture integrated harmonic filtering capability. combined rejection mixer coarse RF tracking filter significantly lessens the in-band emission...
A new push-push VCO architecture takes the second harmonic output signal from a capacitive common-node in negative-g/sub m/ oscillator topology. The generation of 2nd harmonics is accounted for by nonlinear current-voltage characteristic emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising falling time during switching operation core transistors. prototype 12-GHz MMIC realized GaInP/GaAs HBT achieves an power -5 dBm, phase noise -108 dBc/Hz at 1 MHz...
In this study, various diagnostic tools were constructed and plasma factors measured to evaluate the intelligence of process equipment. We used an ICP (Inductively Coupled Plasma) reactor with a radio frequency (RF) power 13.56 MHz, 400 800 W, pressure 10 30 mTorr. Plasma parameters such as electron density (ne), temperature (Te), potential (Vp), floating (Vf) using several instruments (VI probe mass/energy analyzer, etc.) subsequently analyzed. Regression analysis was performed correlate...
This paper discusses the design considerations for CMOS transceiver targeting cognitive radio based TV white space applications. With total frequency band ranging from 54 to 862 MHz, not only harmonic distortions in RF but also wideband LO generation synthesizer needs be carefully addressed. We present that dual-path direct-conversion architecture adopting on-chip rejecting scheme significantly lowers emission problem transmitter and mixing receiver. Also, entire is covered by a block...
A low-power CMOS on-off keying (OOK) transmitter employing a triangular pulse shaping scheme is presented. The proposed circuit based on current-reused common-source stage, whose gain controlled by modulating the gate-source voltage in form. control signal generated an opamp-based integrator. can effectively support variable data rate. 3.5-GHz OOK adopting designed 0.13 μm process. It successfully modulates digital from 100 kbps to 10 Mbps and delivers output power of +2.5 dBm. total current...
We constructed a capacitively coupled plasma (CCP) source and installed various diagnostic tools to perform process diagnosis using gas (CxFy). obtained the energy mass distributions of ions radicals from Ar, C4F8/Ar, C4F6/Ar plasmas. The distribution incident on substrate was controlled self-bias voltage, ion found be inversely proportional mass. measured species density can help understand results as they provide information about substrate.
A fully integrated burst-mode upstream transmitter chip for gigabit-class passive optical network applications is implemented in 0.18mum CMOS technology. In order to control consecutive burst data, the proposed this paper uses a reset mechanism with TX_enable as envelope signal. The feedback from monitoring photodiode (MPD) separated by two independent paths temperature compensation. tested chip-on-board configuration shows an average power of 2dBm extinction ratio above 12dB under 1.25Gb/s...
A resistively degenerated differential amplifier is linearized by using a source-coupled auxiliary FET pair. The structure does not lower the effective g <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> of pair while it efficiently cancels second harmonic feedback component. Realized in 0.18-mum CMOS, proposed achieves 9.8 dB power gain, +7.7 dBm output P xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub> , and +25.8 peak OIP3. maximum...
Aluminum-doped zinc oxide (AZO) thin films were prepared on a glass substrate by employing toroidal magnetron sputtering system to enhance both resistivity and transparency. The temperature was sustained below 50 °C during the deposition of 200 nm thick AZO without an additional heating for substrate, no pre- or postannealing process carried out. This scenario is quite desirable reduce damage thermally sensitive conventional film process; nonetheless, significant crystallinity observed in...
Nitrogen plasma has been intensively attracted in industries due to its unique properties such as high chemical reactivity and internal energy, which improved the process efficiency. To control nitrogen produce desirable reactants, however, a detailed understanding of thermal characteristics is required. Therefore, this work, we proposed an advanced numerical simulation by clustering synthetic spectra three molecular band systems (i.e. N2 B-A, C-B N2+ B-X). Through method, rotational,...