A5101714059- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Metal and Thin Film Mechanics
- CCD and CMOS Imaging Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Block Copolymer Self-Assembly
- Advanced Measurement and Detection Methods
- Silicon Nanostructures and Photoluminescence
- Acoustic Wave Resonator Technologies
- Ferroelectric and Negative Capacitance Devices
- Optical Coherence Tomography Applications
- Transportation Safety and Impact Analysis
- Advanced Data Storage Technologies
- 3D IC and TSV technologies
- Plasma Applications and Diagnostics
- Advancements in Photolithography Techniques
- Simulation and Modeling Applications
- Semiconductor materials and interfaces
- Laser-induced spectroscopy and plasma
- Electronic and Structural Properties of Oxides
- Advanced Fluorescence Microscopy Techniques
- Structural Engineering and Vibration Analysis
- Vibration Control and Rheological Fluids
Zhejiang University
2024
Samsung (South Korea)
2002-2021
Shizuoka University
2017
Trinity College
2017
Hartford Financial Services (United States)
2017
Kavli Energy NanoScience Institute
2017
The University of Tokyo
2017
University of Hyogo
2017
Columbia University
2017
ETH Zurich
2017
A tunable stiffness and damping vibration isolator based on magnetorheological elastomers (MREs) is developed. In this isolator, four MRE elements are used as the springs, whose can be controlled by varying magnetic field. voice coil motor, which relative velocity feedback of payload, damper isolator. Under combined ON–OFF control, proposed shows satisfying isolation effect. The experimental results indicate that responses payload suppressed significantly in comparison to passive system....
A nitride hard mask open process with an ArF photoresist (PR) has been achieved in a dual-frequency capacitively coupled plasma-type reactor to pattern 200 nm high and 90 wide lines. It was found that the most serious problems of PR are striation wiggling PR. Striation is side roughness lines results from deformation top portion during dry etching. This aggravated by ion energy low selectivity Wiggling defined as collapse resulting slimming deposition fluorocarbon polymer The strongly...
For the first time, multi-level NAND flash memories with a 63 nm design rule are developed successfully using charge trapping memory cells of Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiN/Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TaN (TANOS). We integrated TANOS into multi-gigabit without changing window and circuit conventional floating-gate type by improving erase speed. The evolved show four-level cell...
An evaluation of TiB2 gate metal on Hf-silicate dielectric prepared by atomic layer deposition method has been reported. The extracted effective work function for was about 5.08eV. showed almost identical values and the sharp interface between confirmed after postdeposition annealing at 1000°C. lowering (4.91eV) 1100°C caused metal-dielectric intermixing oxygen vacancy formation. electrode found to be suitable use in p-channel oxide semiconductor device.
An evaluation of Ti-based gate metals (Ti, TiN, and ) on Hf-silicate dielectric prepared by atomic layer deposition has been reported. The effective metal work functions, calculated taking an interface charge into consideration, were 4.27, 4.56, 5.08 eV for Ti, , respectively. Regardless electrodes, the conduction mechanism samples was fitted with Poole–Frenkel model, which is related to oxygen vacancies in film. A Ti electrode found be more favorable n-channel oxide semiconductor (MOS)...
The mechanism of selective SiO2 etching over Si3N4 has been studied with the simulation a ladder-type surface profile and specially designed experiments in submicron self-aligned contact (SAC) process. profile, which is boundary broken shoulder Si3N4, normally observed during highly SAC etching. structure two adjacent lines prepared etched wave plasma (SWP) system order to investigate effect fluorocarbon polymer deposition on selectivity ladder profile. This experiment shows that removal...
Abstract Spatial resolution is crucial for imaging subcellular structures. The advent of three-dimensional structured illumination microscopy (3D-SIM) greatly benefits the biology community providing a powerful tool organelles with two-fold enhancement in all three dimensions. However, axial 3D-SIM limited to around 300 nm, which inferior its lateral resolution. Here we report novel method, image interference SIM(I 2 SIM), utilizes two oppositely positioned objectives detect fluorescence...
Abstract Recently, vacuum ultra-violet (VUV) radiation emitted from plasmas has been of particular interest in semiconductor device fabrication because the effects its high-energy photons, such as induced damage or curing on low- k materials. Due to difficulty implementing conventional spectroscopic methods monitor VUV with high accuracy and time resolution current plasma processing equipment, novel monitoring must be investigated. Therefore, this work, we developed a compact system based...
The BOnded Silicon On Insulator (BOSOI) has been considered as a promising substitute for bulk silicon technology because of its structural flexibility. However,there are considerable drawbacks if epitaxial etch stopping or localized plasma etching technique is used in the fabrication process low throughput and high cost. In order to obtain ultrathin SOI layer with uniform thickness, this paper describes cost-effective method bonded wafer using double step CMP which abrasive concentration...
The response and failure mechanisms of typical protection networks used in nMOS technology under simulated HBM MM ESD stressing conditions are presented this paper. resulted failures which predominantly cumulative nature, whereas stress caused abrupt catastrophic failures. Under the modes found to be increase leakage current, resistive short open circuit. induced by mostly or analysis revealed contact spiking electrothermomigration for those devices do not have polysilicon strap Isolation...
An evaluation of the effect nitridation temperature on interface layer (IL) quality Hf-silicate gate dielectric prepared by atomic deposition method has been reported. increase in IL density and roughness was observed x-ray reflectivity as increased. X-ray photoelectron spectroscopy showed preferential reaction at dielectric-Si higher temperatures. The progressive finally led to degradation breakdown voltage, a shift flat band voltage (∼0.54V), deterioration electron channel mobility ∼20%...
Notch formation during storage stack polysilicon etching depending on the various substrate junctions can be explained theoretically by effect of charge flow through p-n junctions. The ion made potential lower, compared to that bottom oxide layer, and notch was formed greater trajectory deflection.