Qihan Liu

ORCID: 0000-0001-6806-2900
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Advanced Memory and Neural Computing
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • Neural Networks and Reservoir Computing
  • CCD and CMOS Imaging Sensors
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Measurement and Detection Methods
  • Optical Systems and Laser Technology
  • Ga2O3 and related materials
  • Photoreceptor and optogenetics research
  • Perovskite Materials and Applications
  • Optical measurement and interference techniques
  • ZnO doping and properties
  • Transition Metal Oxide Nanomaterials

Xi’an Jiaotong-Liverpool University
2019-2022

University of Liverpool
2019-2022

Harbin Institute of Technology
2011

Abstract Solution‐processed metal‐oxide thin films have been widely studied in low‐power and flexible electronics. However, the high temperature required to form a condensed uniform film limits their applications low‐cost Here, novel environmental‐friendly comproportionation reaction synthesis (CRS) is presented obtain amorphous aluminum oxide (AlO x ) for solution‐processed thin‐film transistors (TFTs) employing water as precursor solvent. The thermal decomposition of CRS‐AlO completed at...

10.1002/aelm.202000072 article EN Advanced Electronic Materials 2020-07-15

The ecofriendly combustion synthesis (ECS) and self-combustion (ESCS) have been successfully utilized to deposit high-k aluminum oxide (AlOx) dielectrics at low temperatures applied for aqueous In2O3 thin-film transistors (TFTs) accordingly. ECS ESCS processes facilitate the formation of high-quality lower compared conventional methods based on an ethanol precursor, as confirmed by thermal analysis chemical composition characterization. TFTs ESCS-AlOx show enhanced electrical characteristics...

10.1021/acsami.0c20947 article EN ACS Applied Materials & Interfaces 2021-04-13

In this study, we describe combustion-processed high-quality Li-AlO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> thin films and their implementation in In- xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> synaptic transistors by a low temperatures (300 °C) water-based method. The resulting presented superior electrical performance at operating voltage of 3 V, with positive...

10.1109/icicdt51558.2021.9626483 article EN 2021-09-15
Coming Soon ...