A5033237525- Advanced Memory and Neural Computing
- Thin-Film Transistor Technologies
- MXene and MAX Phase Materials
- ZnO doping and properties
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Neuroscience and Neural Engineering
- Nanowire Synthesis and Applications
- Transition Metal Oxide Nanomaterials
- CCD and CMOS Imaging Sensors
- Ga2O3 and related materials
- Photoreceptor and optogenetics research
- 2D Materials and Applications
- Supercapacitor Materials and Fabrication
- Advanced Sensor and Energy Harvesting Materials
- Neural Networks and Reservoir Computing
- Neural dynamics and brain function
- Polydiacetylene-based materials and applications
Xi’an Jiaotong-Liverpool University
2019-2023
University of Liverpool
2019-2023
Abstract The highly parallel artificial neural systems based on transistor‐like devices have recently attracted widespread attention due to their high‐efficiency computing potential and the ability mimic biological neurobehavior. For past decades, plenty of breakthroughs related synaptic transistors been investigated reported. In this work, a kind photoelectronic transistor that successfully mimics behaviors synapses has proposed systematically analyzed. individual device, MXenes...
A novel technology of doping potassium ions to enhance the synaptic characteristics thin-film transistors. The classifier Spiking Neural Network with significant energy efficiency was successfully operated based on proposed device.
As one of the promising next-generation electronics, brain-inspired synaptic resistive random access memory (RRAM) devices with stacked solution-processed (SP) spin-coated switching (RS) layers were fabricated in this work. Compared RRAM device a single SP-RS layer (Ag/SP-AlOx/ITO), (Ag/SP-GaOx/SP-AlOx/ITO) is induced by metal conductive filament performed lower power consumption (∼±0.6 V operation voltage), larger read and write capability (∼2 × 104 ON/OFF ratio), enhanced stability (>2 s...
In the new generation of brain-like optoelectronic visual signal processing and artificial perception systems, floating-gate synaptic devices based on two-dimensional materials represent a feasible route.
Abstract As the core component of an intelligent neuromorphic computer system, reliable synaptic devices process vast amounts data with high computing speed and low energy consumption. In this work, ion‐doped eco‐friendly solution‐processed indium oxide (InO x )/aluminum (AlO ) electrolyte gate transistors (EGTs) typical behavior are proposed. The lithium ions doped into AlO solid‐state layer to facilitate generation electrical double layers InO improve stability long‐term...
The optimization of solution-processed ZTO TFTs was successfully realized by fabricating a channel layer into homojunction structure (MXene doped ZTO/ZTO) to form 2DEG. device shows excellent electrical performance with maximum annealing temperature ≤300 °C.
The ecofriendly combustion synthesis (ECS) and self-combustion (ESCS) have been successfully utilized to deposit high-k aluminum oxide (AlOx) dielectrics at low temperatures applied for aqueous In2O3 thin-film transistors (TFTs) accordingly. ECS ESCS processes facilitate the formation of high-quality lower compared conventional methods based on an ethanol precursor, as confirmed by thermal analysis chemical composition characterization. TFTs ESCS-AlOx show enhanced electrical characteristics...
N-channel thin-film transistors (TFTs) made of solution-processed In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> were fabricated and electrical tested for device reliability. While the TFTs give a threshold voltage V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> 0.6 low-voltage operation, experimental results show that shifts over time even when gate biasing is at 3 V. can...
In this work, the effect of hydrogen peroxide (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O ) on biased radiation stress (BRS) and illumination (BIS) stability solution-processed AlO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> thin films were investigated. It is found that BRS BIS stabilities, as well leakage behavior significantly improved through employing H in solution-process. Through TGA-DSC analysis precursor powder...
The synaptic transistors with MXenes as floating gate and titania (TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) tunneling layer are prepared by a low-cost facile solution process. devices exhibit typical behaviors of potentiation depression the voltage pulses. Moreover, through neuromorphic computing simulation, in this work show excellent recognition rate modified national institute standards technology (MNIST) database after...
In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum (A1O) dielectric produces TFT field effect mobility average value 20.5 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ·V...
Thin-film transistors (TFTs) with solutionprocessed indium oxide (In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) as the channel layer and aluminium gate dielectric were fabricated. The fabricated In TFTs are tested for reliability in low-voltage operation. Measurement results show that threshold voltage (V xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> increases from 0.6 V...
In this work, we investigate an fabricating route of solution-processed thin-film transistors (TFTs). The high-k dielectric layers aluminum oxide (AlO) were optimized through hydrogen peroxide (H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O ). With Zn incorporation in tin (SnO) semiconductor layer, the ZnSnO TFT with a field effect mobility 4.3 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ·V...
Artificial synapses with light signal perception capability offer the ability to neuromorphic visual processing system on demand. In of excellent optical and electrical characteristics, low-dimensional materials have become one most favorable candidates key component for optoelectronic artificial synapses. Previously, our group originally proposed synthesis germanium oxide-coated MXene nanosheets. this work, we further applied technology into synaptic thin-film transistors first time. The...
In this work, solution processed zinc tin oxide semiconductor films were investigated. Different from the widely reported high-temperature and toxic organic solvent-based fabrication process, a low temperature eco-friendly aqueous route was studied. The optimization of electrical performances on field effect mobility reliability proved. Moreover, resistor-loaded inverter constructed.
The low-dimensional material for synaptic transistors are recently widely investigated due to their excellent neural characteristics, making it favorable candidates artificial synapses. Previously, our group fabricated a kind of germanium oxide coated two-dimensional MXene nanosheets. Herein, we further applied the technology fabricating into thin-film transistors. devices exhibited typical regulated postsynaptic current behaviors under visible light and gate bias inputs. Moreover, color...
For the past decades, synaptic devices for inmemory computing have been widely investigated due to high-efficiency potential and ability mimic biological neurobehavior. However, conventional twoterminal memristors show drawbacks of resistance reduction caused by large-scale paralleling asynchronous storage-reading process, which limit its development. Recently, researchers paid attention transistor-like artificial synapse. Due existence insulator layer separation input read terminals,...
Nowadays, the synaptic devices for in-memory computing have been widely investigated due to high-efficiency potential and ability mimic biological neurobehavior. In this work, two-terminal three-terminal based on MXenes, a kind of two-dimensional materials, proposed. The typical behaviors including long-term potentiation depression (LTP/D) also studied. Moreover, through combining LTP/D property with simulator in artificial neural network (ANN), task handwritten digital image recognition has...