A5075877257- High-pressure geophysics and materials
- Electronic and Structural Properties of Oxides
- Diamond and Carbon-based Materials Research
- ZnO doping and properties
- Ferroelectric and Piezoelectric Materials
- Gas Sensing Nanomaterials and Sensors
- Chalcogenide Semiconductor Thin Films
- Force Microscopy Techniques and Applications
- Advanced Condensed Matter Physics
- Solid-state spectroscopy and crystallography
- 2D Materials and Applications
- Transition Metal Oxide Nanomaterials
- Geological and Geochemical Analysis
- MXene and MAX Phase Materials
- Organic and Molecular Conductors Research
- Iron-based superconductors research
- Perovskite Materials and Applications
- Topological Materials and Phenomena
- Microwave Dielectric Ceramics Synthesis
- Semiconductor materials and devices
- Magnetic and transport properties of perovskites and related materials
- Quantum Dots Synthesis And Properties
- Multiferroics and related materials
- Advancements in Solid Oxide Fuel Cells
- Superconductivity in MgB2 and Alloys
Jilin University
2016-2025
Henan University of Science and Technology
2025
Czech Academy of Sciences, Institute of Physics
2025
State Key Laboratory of Superhard Materials
2014-2024
Zhengzhou University
2024
Chang'an University
2024
Jilin Medical University
2002-2020
State Council of the People's Republic of China
2018
Texas Tech University
2013-2018
Inner Mongolia University for Nationalities
2018
Recent scientific advances on organic-inorganic hybrid perovskites are mainly focused the improvement of power conversion efficiency. So far, how compression tunes their electronic and structural properties remains less understood. By combining in situ photocurrent, impedance spectroscopy, X-ray diffraction (XRD) measurements, we have studied electrical transport compressed CH3NH3PbI3 (MAPbI3) nanorods. The visible light response MAPbI3 robust below 3 GPa while it is suppressed when becomes...
Abstract Herein we report two new TPE‐based 3D MOFs, that is, Sr‐ETTB and Co‐ETTB (TPE=Tetraphenylethylene, H 8 ETTB=4′,4′′′,4′′′′′,4′′′′′′′‐(ethene‐1,1,2,2‐tetrayl)tetrakis(([1,1′‐biphenyl]‐3,5‐dicarboxylic acid))). Through tailoring outer shell electron configurations of Sr II Co cations, the fluorescence intensity MOFs is tuned from high emission to complete non‐emission. with strong blue shows reversible variations in response pressure temperature, which directly related deformation...
A semiconducting-semimetallic transition was observed to occur at 12.6 GPa, followed by an orthorhombic monoclinic structural transition.
An annular beam was able to form laser induced plasma with an enhanced spectral signal stability, resulting in better detection performance for the quantitative analysis of LIBS.
Employing a diamond anvil cell, we measured resistivity and the Hall effect of InAs under pressures 25 GPa, identifying key structural electronic phase transitions at 3.8, 7.2, 10.3, 14.7 GPa. The minima 7.2 GPa coincide with shifts, while changes between 3.8 10.3 indicate transitions, including metallization semiconductor type inversion. First-principles calculations validate these observations, highlighting role pressure in tailoring properties, implications for developing high-performance devices.
A multilayer microcircuit on a diamond surface has been developed for high-pressure resistivity measurement in anvil cell (DAC). Using film deposition technique, layer of Mo was deposited as conductor, topped with alumina insulation. microelectric circuit fabricated photolithographic shaping method after encapsulation. With precise control and measurements all the dimensions sample resistance measurement, including width metallic diameter thickness gasket hole, can be accurately determined....
A pressure induced semiconductor-semimetal phase transition on tungsten diselenide has been studied using in situ electrical resistivity measurement and first-principles calculation under high pressure. The experimental results indicate that the takes place at 38.1 GPa. calculations performed by CASTEP code based density functional theory illustrate indirect band gap of WSe2 vanishes 35 GPa, which an isostructural from semiconductor to semimetal WSe2. According dependence partial states,...
Accurate high pressure in situ Hall-effect and temperature dependent electrical resistivity measurements have been carried out on Bi2Te3, a topological insulator. The resistivity, Hall coefficient, carrier concentration, mobility show the abnormal inflection points at 8, 12, 17.8 GPa, indicating that pressure-induced structural phase transitions of Bi2Te3 can result series changes transport behavior. In addition, coefficient shows significant discontinuous change 4 which is caused by...
A new technique incorporating a diamond anvil cell with photolithographic and film deposition techniques has been developed for electrical resistivity measurement under high pressure. Molybdenum was sputtered onto facet patterned to the desired microcircuit. Al2O3 (alumina) layer then fabricated Mo-coated insulate thin-film electrodes from metallic gasket protect against plastic deformation pressure conditions. For better insulation, also gasket. The regular shape of microcircuit makes it...
The electronic structure of TiS2 and its transport properties under high pressure have been studied using first-principles calculation in situ parameters measurement. Both the theoretical experimental results support conclusion that is a semimetal rather than semiconductor maintains semimetallic behavior pressure. Although there no significant change density state at Fermi level up to 20 GPa, drastically around 15 manifested by slope resistivity concentration versus curves. This response may...
The electrical transport behavior of SnS under high pressure has been investigated by the temperature dependence resistivity measurement, in situ Hall-effect and first-principle calculation. experimental results show that undergoes a semiconductor to semimetal transition at ∼10.3 GPa, this is further substantiated band-structure total partial density states predict character attributed enhanced coupling Sn-5s, Sn-5p, S-3p with application pressure. In addition, dramatic changes parameters...
An unexpected superconductivity enhancement is reported in decompressed In 2 Se 3 . The onset of occurs at 41.3 GPa with a critical temperature ( T c ) 3.7 K, peaking 47.1 GPa. striking observation shows that this layered chalcogenide remains superconducting decompression down to 10.7 More surprisingly, the highest lower pressures 8.2 twofold increase same crystal structure as compression. It found evolution driven by pressure‐induced R ‐3 m I ‐43 d structural transition and significant...
The electrical transport properties of CH3NH3PbBr3 (MAPbBr3) polycrystals were in situ investigated by alternating-current impedance spectroscopy under high pressures up to 5.6 GPa. It is confirmed that ionic and electronic conductions coexist MAPbBr3. As pressure below 3.3 GPa ions migration the predominant process, while above conduction becomes main process. An obvious ionic-electronic transition can be observed. dependent photo responsiveness MAPbBr3 was also studied photocurrent...
The fewer the number of nucleation sites formed in vessel, larger size obtained crystals.
The layered crystal of EuSn$_2$As$_2$ has a Bi$_2$Te$_3$-type structure in rhombohedral ($R\bar{3}m$) symmetry and been confirmed to be an intrinsic magnetic topological insulator at ambient conditions. Combining {\it ab initio} calculations \emph{in-situ} x-ray diffraction measurements, we identify new monoclinic $C2/m$ above $\sim$14 GPa. It three-dimensional network made up honeycomb-like Sn sheets zigzag As chains, transformed from the via two-stage reconstruction mechanism with...
Abstract In this work, a novel multiferroic‐like nanocomposite is designed and obtained using the high‐pressure torsion (HPT) method. The crystal structure, phase composition, morphology, ferromagnetic (FM), ferroelectric (FE) properties of initial powders ferroelectric/ferromagnetic nanocomposites are studied comprehensively. their composite show perovskite spinel crystalline phases for FE FM fractions, respectively. After HPT, particle sizes decreased significantly. It shown that consists...
We report an anomalous phase transition in compressed In2Se3. The high-pressure studies indicate that In2Se3 transforms to a new isosymmetric R-3m structure at 0.8 GPa whilst the volume collapses by ∼7%. This involves pressure-induced interlayer shear glide with respect one another. Consequently, outer Se atoms of sheet locate into interstitial sites three neighboring sheets are weakly connected van der Waals interaction. Interestingly, this changes stacking sequence significantly but leaves...
Pressure effects on the ionic transport and optoelectrical properties of lead halide perovskites are still largely terra incognita. Herein, we have conducted in situ alternating current (AC) impedance spectroscopy both CsPbBr3 powders single crystals with random planes at pressures up to 9.2 GPa 6.8 GPa, respectively. Through selection different simulation equivalent circuit models AC spectroscopy, obtained pressure-dependent electrical parameters CsPbBr3. The results indicate that all...
An investigation on the structural stabilities and electronic properties of SrX (X = S, Se Te) under high pressure is conducted using first-principles calculation based density functional theory (DFT) with plane wave basis set as implemented in CASTEP code. Our results demonstrate that sequence pressure-induced phase transition three compounds NaCl-type (B1) structure (Fm3m) to CsCl-type (B2) (Pm3m). The metallization pressures are determined theoretically. effect optical discussed. compared...
A two-electrode configuration was adopted in an situ impedance measurement system to determine the ionic conductivity at high pressures a diamond anvil cell. In experimental measurements, Mo thin-films were specifically coated on tops of anvils serve as pair capacitance-like electrodes for spectrum measurements. analysis, Warburg element introduced into equivalent circuit reveal transport property among other physical properties material pressures. Using this method, we able character...
Pressure-induced electrical transport properties of Bi2Se3, including Hall coefficient, carrier concentration, mobility, and resistivity, have been investigated under pressure up to 29.8 GPa by in situ Hall-effect measurements. The results indicate that the structural electronic phase transitions Bi2Se3 induce discontinuous changes these parameters. significant anomaly coefficient at 5 reveals an topological transition deriving from change band extremum (Van Hove singularity). Additionally,...