A5017716520- ZnO doping and properties
- High-pressure geophysics and materials
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- Diamond and Carbon-based Materials Research
- Copper-based nanomaterials and applications
- Metal and Thin Film Mechanics
- Hybrid Renewable Energy Systems
- Boron and Carbon Nanomaterials Research
- Microwave Dielectric Ceramics Synthesis
- Energy and Environment Impacts
- Ga2O3 and related materials
- Solid-state spectroscopy and crystallography
- Surface and Thin Film Phenomena
- Ferroelectric and Piezoelectric Materials
- Quantum Dots Synthesis And Properties
- Semiconductor Quantum Structures and Devices
- Luminescence Properties of Advanced Materials
- GaN-based semiconductor devices and materials
- Rare-earth and actinide compounds
- Superconductivity in MgB2 and Alloys
- Microgrid Control and Optimization
Yanbian University
2013-2025
Second Artillery General Hospital of Chinese People's Liberation Army
2019
Jilin University
2008-2016
State Key Laboratory on Integrated Optoelectronics
2016
University of Electronic Science and Technology of China
2013
State Key Laboratory of Superhard Materials
2011
Jilin Medical University
2010
China Guodian Corporation (China)
2008
Nanjing Tech University
2008
Institute of Metal Research
2006
Employing a diamond anvil cell, we measured resistivity and the Hall effect of InAs under pressures 25 GPa, identifying key structural electronic phase transitions at 3.8, 7.2, 10.3, 14.7 GPa. The minima 7.2 GPa coincide with shifts, while changes between 3.8 10.3 indicate transitions, including metallization semiconductor type inversion. First-principles calculations validate these observations, highlighting role pressure in tailoring properties, implications for developing high-performance devices.
This study has two aims: develop a simulated and interactive teaching software for highly skilled laboratory technicians, researchers, or practicing physicians in the departments of medicine, pathology, hematology who are working on Peripheral Blood smear examination evaluate application effectiveness this educational software. For research, cohort 26 professionals was enlisted. The enabled 12 distinct leukocyte morphologies. Participants were tested before training subsequently after (at 2...
A pressure induced semiconductor-semimetal phase transition on tungsten diselenide has been studied using in situ electrical resistivity measurement and first-principles calculation under high pressure. The experimental results indicate that the takes place at 38.1 GPa. calculations performed by CASTEP code based density functional theory illustrate indirect band gap of WSe2 vanishes 35 GPa, which an isostructural from semiconductor to semimetal WSe2. According dependence partial states,...
The electrical transport behavior of SnS under high pressure has been investigated by the temperature dependence resistivity measurement, in situ Hall-effect and first-principle calculation. experimental results show that undergoes a semiconductor to semimetal transition at ∼10.3 GPa, this is further substantiated band-structure total partial density states predict character attributed enhanced coupling Sn-5s, Sn-5p, S-3p with application pressure. In addition, dramatic changes parameters...
Abstract The hybrid energy system design problem needs efficacy tools to reach optimal results in remote areas. metaheuristic optimization methods are the best choice address complex problems. This article presents an improved approach based on management strategy for sizing and configuration of standalone photovoltaic scheme components. Improved particle swarm panel battery is applied using MATLAB hourly solar radiation, ambient temperature data, load demand. objective define components...
Two-electrode configuration was developed for in situ electrical impedance detecting on diamond anvil cell under high pressure. The metal gasket used as one electrode and the risk coming from short between sample interside wall of eliminated. evaluated proved to be effective by measuring electric nanocrystalline ZnS
An alternate current impedance spectrum was utilized to differentiate the electrical transport process, respectively, in bulk and grain boundary of barium tungstate microcrystallines under high pressures up 20 GPa. For powdered BaWO4 microcrystallines, makes a more remarkable contribution than total resistance. The discontinuities resistance relaxation frequency at about 7 14 GPa reflect pressure-induced structural phase transitions from scheelite fergusonite structure an unknown disordered...
GaAs undergoes a semiconductor–metal transition, which was investigated by <italic>in situ</italic> electrical measurements and first-principles calculations under high pressure.
The van der Pauw technique is widely used to determine resistivity of materials. In diamond anvil cell the compressed sample will make contact placement change under high pressure. Using finite element analysis, we study effect error induced by pressure on measurement accuracy method. results show has a significant determination accuracy. This method can provide accurate when spacing b between center and periphery less than D/9 (sample diameter). And rapidly increases as location closing...
High-pressure Raman spectra and in situ electrical resistivity measurement of the dumbbell-like ZnO microcrystals have been investigated by using diamond-anvil-cell technique at room temperature. The were synthesized via a facile solution method under mild conditions. In terms results, underwent transition from wurtzite to rock-salt structure with increasing pressure phase-transition was about 11.13 GPa. performed on designed diamond anvil cell. change related phase for observed applied up...
The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent resistivity measurements, Hall effect transmission electron microscopy analysis, first-principles calculations. measurements revealed pressure-induced at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m Imma. In addition, the activation energies for conductivity indicated that undergoes carrier-type inversion...
In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up 30.2 GPa) on metallization dielectric properties GaP. It is found that carrier transport process changes from mixed grain boundary conduction pure at 5.8 GPa, due pressure-induced structural phase transition, resistance drops drastically by three orders magnitude 25.5 GPa. Temperature dependence band structure suggest occurrence a...