A5002819436- Perovskite Materials and Applications
- 2D Materials and Applications
- High-pressure geophysics and materials
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- Gas Sensing Nanomaterials and Sensors
- Luminescence and Fluorescent Materials
- Organic and Molecular Conductors Research
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films
- Ionic liquids properties and applications
- ZnO doping and properties
- Inorganic Fluorides and Related Compounds
- Material Dynamics and Properties
- Force Microscopy Techniques and Applications
- Magnetic and transport properties of perovskites and related materials
- Heusler alloys: electronic and magnetic properties
- Solid-state spectroscopy and crystallography
- Organic Light-Emitting Diodes Research
- Semiconductor materials and interfaces
- Optical properties and cooling technologies in crystalline materials
- Glass properties and applications
- Advanced Chemical Physics Studies
- Advancements in Solid Oxide Fuel Cells
Liaocheng University
2020-2025
Tsinghua University
2022
Yantai University
2022
Jiangsu Normal University
2022
Jilin University
2016-2021
Sorbonne Université
2019-2020
Centre National de la Recherche Scientifique
2019-2020
Institut de minéralogie, de physique des matériaux et de cosmochimie
2019-2020
Jilin Medical University
2018-2020
State Key Laboratory of Superhard Materials
2016-2019
Abstract Transition metal dichalcogenides (TMDs) exhibit excellent electronic and photoelectric properties under pressure, prompting researchers to investigate their structural phase transitions, electrical transport, response upon compression. Herein, the of layered ZrS 2 pressure using in situ high‐pressure photocurrent, Raman scattering spectroscopy, alternating current impedance absorption theoretical calculations are studied. The experimental results show that photocurrent continuously...
Abstract This work investigates the impact of pressure on structural, optical properties, and electronic structure CsPbBr 3 quantum dots (QDs) using steady‐state photoluminescence, absorption, femtosecond transient absorption spectroscopy, reaching a maximum 3.38 GPa. The experimental results indicate that QDs undergo state (ES) transitions from ES‐I to ES‐II ES‐III at 0.38 1.08 GPa, respectively. Intriguingly, mixed is observed within range 1.08–1.68 pressure‐induced fluorescence quenching...
Pressure-induced evolution of the bandgap, structural phase transitions, and changes in exciton effects can significantly modulate luminescent properties lead halide perovskites (LHPs) quantum dots (QDs). Previous studies have indicated that CH3NH3PbBr3 (MAPbBr3) QDs, as a typical low-dimensional LHP material, their photoluminescence (PL) at ambient conditions are mainly attributed to radiative recombination initially generated excitons upon light absorption involving surface states, while...
Bi2S3 has attracted significant interest due to its unique optical, electrical, and photosensitive properties. The utilization of pressure been substantiated as a proficient technique in modulating the optoelectronic characteristics functional materials garnered increasing attention. In this work, photoresponse upon compression was systematically investigated combination with situ photocurrent measurements, Raman spectroscopy, absorption density theory calculations. Under pressure, exhibits...
Electron transfer (ET) process is considered a substantial factor in influencing the photoelectric conversion efficiency of optoelectronic devices. While pressure has demonstrated effective tune ET, comprehensive investigation into mechanisms for both restraining and promoting ET remains elusive. Herein, we have performed measurements using situ high-pressure steady-state photoluminescence (PL), Raman scattering spectra, femtosecond transient absorption (fs-TA) spectroscopy on InP/ZnS...
The optimal spectral parameters and photometric performances of white LEDs with red instead phosphor (pc/R-WLEDs) for the color fidelity index (Rf) above 97 at correlated temperatures (CCTs) 2700 K to 6500 K have been obtained based on luminous efficacy (LE) model. We first reported four real pc/R-WLEDs Rfs 96–97 LEs 120–124 lm/W CCTs 2969 K, 4468 K, 5682 K, 6558 K by using blue (448 nm) (650 nm) LEDs, as well green (507 nm) yellow (586 nm) phosphors. As compared phosphor-converted...
Pressure has an essential role in the control of both photo-responsive and electrical transport properties halide perovskites. As a lead-free double perovskite material, (NH4)2SeBr6, which avoids use toxic lead element, become ideal candidate for application photovoltaic photoelectric devices. In this paper, response (NH4)2SeBr6 have been studied by photocurrent alternating current impedance spectroscopy measurements under high pressure up to 21.2 GPa, respectively. The results indicate that...
Abstract The electrical transport and structural properties of tin oxide nanoparticles under compression have been studied by in situ impedance measurements synchrotron X-ray diffraction (XRD) up to 27.9 GPa. It was found that the conduction SnO 2 can be improved significantly with compression. Abnormal variations resistivity, relaxation frequency, relative permittivity were observed at approximately 12.3 25.0 GPa, which attributed pressure-induced tetragonal- orthorhombic-cubic transitions....
Abstract Pressure‐modulated self‐trapped exciton (STE) emission mechanism in all‐inorganic lead‐free metal halide double perovskites characterized by large Stokes‐shifted broadband emission, has attracted much attention across various fields such as optics, optoelectronics, and biomedical sciences. Here, employing the perovskite Cs 2 TeCl 6 a paradigm, authors elucidate that performance of STE can be modulated pressure, attributable to pressure‐induced evolution electronic state (ES). Two ES...
Ionic transport behaviors of silver chloride (AgCl) have been revealed with impedance spectra measurement under high pressures up to 20.4 GPa. AgCl always presented ionic conducting experimental pressures, but electronic conduction can coexist within the pressure range from 6.7 9.3 The conductivity decreases by three orders magnitude compression, indicating that Ag+ ion migrations are suppressed pressure. A parameter, fW, was defined as starting frequency at which ions begin show obvious...
GaAs undergoes a semiconductor–metal transition, which was investigated by <italic>in situ</italic> electrical measurements and first-principles calculations under high pressure.
The ionic transport properties of solid electrolyte LaF3 were systematically studied under high pressures up to 30.6 GPa with alternate-current impedance spectra measurements and first-principles calculations. From the measurements, was found transform from pure conduction mixed electronic at 15.0 GPa, which results pressure-induced structural phase transition a tysonite-type structure an anti-Cu3Ti-type structure. F- ion migration can be suppressed by pressure, causing decrease conductivity...
ZrSe2, a member of the group-IVB transition metal dichalcogenides, shows favorable performance in optoelectronic applications. Here, photoelectric properties ZrSe2 under high pressure have been systematically investigated. At 13.5 GPa, photocurrent increases three orders magnitude greater than its initial value. Interestingly, above 23.5 exhibits negative response, which can be attributed to photothermal effect caused by pressure-induced metallization. This study demonstrates critical role...
From impedance spectra measurements, an abnormal pressure-induced ionic–polaronic–ionic transition sequence was found in the ionic conductor AgBr.
Utilizing in situ Raman spectroscopy, resistivity, and Hall-effect measurements, we conducted an extensive investigation on the continuous electronic phase transitions transport properties of two-dimensional (2D) tellurium (Te) under high pressure at room low temperature (80–300 K). The distinguishable decrease A1 mode's full width half maximum trigonal (Te-I) indicated transition 2.2 GPa. following experiments located Lifshitz semiconductor-semimetal 0.9 1.9 GPa, respectively, was also...
The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent resistivity measurements, Hall effect transmission electron microscopy analysis, first-principles calculations. measurements revealed pressure-induced at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m Imma. In addition, the activation energies for conductivity indicated that undergoes carrier-type inversion...
In situ impedance measurement, resistivity measurements and first-principles calculations have been performed to investigate the effect of high pressure (up 30.2 GPa) on metallization dielectric properties GaP. It is found that carrier transport process changes from mixed grain boundary conduction pure at 5.8 GPa, due pressure-induced structural phase transition, resistance drops drastically by three orders magnitude 25.5 GPa. Temperature dependence band structure suggest occurrence a...
n-Hexane has been widely used in the fields of chemistry and energy sources, as well studies ultrafast dynamics quantum dots at high pressures/temperatures. Here, we report solid–liquid phase diagrams n-hexane from room temperature to 651 K within 10 GPa by using situ Raman spectroscopy microscopic photography techniques. An anomalous melting phenomenon observed n-hexane, that is, transition critical point same pressure is different processes heating cooling, there a great relaxation...
Time-resolved transient absorption (TA) spectroscopy measurement technology provides detailed information into the ultrafast dynamics by tracking transitions and deactivation processes of excited-state carriers, which holds vast potential for investigating related to luminescence nonradiative recombination materials. Pressure is considered a potent tool tuning carrier dynamic behaviors. The combination high-pressure experimental time-resolved TA enables researchers reveal inherent relation...