A5100807628- Luminescence Properties of Advanced Materials
- Gas Sensing Nanomaterials and Sensors
- Perovskite Materials and Applications
- Microwave Dielectric Ceramics Synthesis
- Luminescence and Fluorescent Materials
- Radiation Detection and Scintillator Technologies
- Glass properties and applications
- Semiconductor materials and devices
- Crystal Structures and Properties
- Ferroelectric and Piezoelectric Materials
- Ga2O3 and related materials
- Electronic and Structural Properties of Oxides
- Inorganic Fluorides and Related Compounds
- Transition Metal Oxide Nanomaterials
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Fullerene Chemistry and Applications
- Solid State Laser Technologies
- Advanced Condensed Matter Physics
- Polyoxometalates: Synthesis and Applications
- Boron and Carbon Nanomaterials Research
- Lanthanide and Transition Metal Complexes
- Nuclear materials and radiation effects
- Optical properties and cooling technologies in crystalline materials
- Rare-earth and actinide compounds
Yanbian University
2016-2025
Ajou University
2003-2006
The photoluminescence stability of all-inorganic perovskite nanocrystals (CsPbBr<sub>3</sub>) with different size is studied.
Employing a diamond anvil cell, we measured resistivity and the Hall effect of InAs under pressures 25 GPa, identifying key structural electronic phase transitions at 3.8, 7.2, 10.3, 14.7 GPa. The minima 7.2 GPa coincide with shifts, while changes between 3.8 10.3 indicate transitions, including metallization semiconductor type inversion. First-principles calculations validate these observations, highlighting role pressure in tailoring properties, implications for developing high-performance devices.
A series of GdY2SbO7:Bi3+, Eu3+ phosphors were prepared using the conventional solid-state reaction. In this study, photoluminescence properties and temperature sensitivity samples investigated. When Bi3+ codoped into GdY2SbO7, intensity decreased with increasing concentration, indicating a potential energy transfer from to Eu3+. To examine sample, its emission spectrum was investigated in range 300–500 K. Based on different dependences Eu3+, relative (Sr) absolute (Sa) calculated...
The photoluminescence (PL) properties of transition metal ion (Mn<sup>2+</sup> or Cu<sup>+</sup>) doped Zn–In–S/ZnS core/shell quantum dots (QDs) in solution and solid films were investigated by using steady-state time-resolved PL spectra.
GaAs undergoes a semiconductor–metal transition, which was investigated by <italic>in situ</italic> electrical measurements and first-principles calculations under high pressure.
In this study, the photoluminescence properties of a series SrMg1·06Al9·94O17 (SMAO):Ce3+, Tb3+, and SMAO:Tb3+ phosphors were investigated. At an excitation wavelength 230 nm, phosphor emitted green light at 544 nm. When Ce3+ ions co-doped into SMAO:Tb3+, band red-shifted from to 269 emission intensity was enhanced up approximately 28 times compared with that Ce3+-free because efficient energy transfer → Tb3+ in SMAO host. Moreover, introduction Ce3+, thermal stability improved...
The high-pressure metallization and electrical transport behaviors of GaSb were systematically investigated using in situ temperature-dependent resistivity measurements, Hall effect transmission electron microscopy analysis, first-principles calculations. measurements revealed pressure-induced at approximately 7.0 GPa, which corresponds to a structural phase transition from F-43m Imma. In addition, the activation energies for conductivity indicated that undergoes carrier-type inversion...