A5078989143- Luminescence Properties of Advanced Materials
- Radiation Detection and Scintillator Technologies
- Perovskite Materials and Applications
- Solid-state spectroscopy and crystallography
- Atomic and Subatomic Physics Research
- Glass properties and applications
- Solid State Laser Technologies
- Nuclear materials and radiation effects
- Photorefractive and Nonlinear Optics
- Terahertz technology and applications
- Nuclear Physics and Applications
- Advanced Semiconductor Detectors and Materials
- Ga2O3 and related materials
- Spectroscopy and Laser Applications
- Medical Imaging Techniques and Applications
- Particle accelerators and beam dynamics
- Lanthanide and Transition Metal Complexes
- Advanced Condensed Matter Physics
- Optical properties and cooling technologies in crystalline materials
- Microwave Dielectric Ceramics Synthesis
- Plasma Diagnostics and Applications
- Vacuum and Plasma Arcs
- Inorganic Fluorides and Related Compounds
- Magnetic confinement fusion research
- Particle Detector Development and Performance
University of Tartu
2015-2024
Mikron (Russia)
2011
Abstract Photo‐ and radioluminescence characteristics of the Pr 3+ ‐doped Lu 3 Al 5 O 12 single crystal are reported compared with those Pr‐doped Y . With respect to host, lower emission quenching better temperature stability round 300 K is obtained for 5d–4f peaking 308 nm about a factor 2 higher intensity observed around this temperature. The photoluminescence decay time 17 ns, while scintillation dominated by component 25 ns. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
We investigate and compare optical absorption, luminescence scintillation properties of Pr-doped Y3Al5O12, Lu3Al5O12, Y2SiO5 Lu2SiO5 single crystals. The processes determining the kinetics fast Pr3+ 5d–4f radiative transition are described. Among studied host materials, only Lu3Al5O12 presents neither any 5d1–4f state nonradiative quenching nor ionization at room temperature. evaluate figure merit all materials for application as scintillators. most promising system appears to be : Pr, since...
Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ trivalent rare-earth ions were proposed prospective phosphors for white light-emitting diodes quantum cutting down-converting materials applicable enhancement silicon solar cells. Luminescence characteristics different Bi3+-doped found be strongly ascribed electronic transitions from excited levels a ion its ground...
Emission and excitation spectra decay kinetics are studied for the luminescence of undoped LuAG YAG crystals. Two emission bands located at 4.8 eV 3.95 in 4.9 3.65 LuAG, excited Eexc>6.5 energy region. They both characterized by a relatively slow (µs) time, ascribed to transitions from two different configurations an exciton localized near antisite defect (Y3+Al or Lu3+Al). The corresponding band, peaking 6.9 7.2 is perturbed defect. Besides emissions, weak fast (ns) self-trapped exciton,...
Abstract Luminescence, energy transfer and defects creation processes were studied at 4.2–300 K for Ce 3+ ‐doped Lu 3 Al 5 O 12 crystals under excitation in the 2.5–11.5 eV range. The results obtained compared with characteristics of Y :Ce crystals. It was concluded that both systems efficiency from host lattice to impurity ion can be noticeably increased by decrease concentration responsible their intrinsic luminescence. origin optically created possible mechanisms formation are discussed....
We investigate scintillation properties and energy trapping processes in Pr ‐doped Lu 3 Al 5 O 12 ( : AG ) optical ceramics, specifically focusing on the effects of sintering aids. Ceramics with good transmittance comparable those single crystals were obtained without use Their introduction caused a transparency improvement, accompanied, however, by deterioration terms light yield time decay. interpret results, discussing role aliovalent agents formation point defects acting as traps...
Abstract Single crystalline films (SCFs) of Y 3 Al 5 O 12 :Bi and Lu with different Bi 3+ contents are studied at 1.7–300 K by the time‐resolved luminescence spectroscopy methods under excitation in 2.4–20 eV energy range. The ultraviolet (UV) emission these SCFs is shown to arise from radiative decay metastable minima triplet relaxed excited state (RES) a single centre, which related P 0 1 levels free ion, respectively. At T < 80 K, only observed resulting appearance low‐energy component...
Single-crystalline films of Lu(3)Al(5)O(12):Bi, prepared by the liquid phase epitaxy method from melt-solution based on Bi(2)O(3) flux, have been studied at 4.2-400 K time-resolved luminescence spectroscopy methods. Their emission spectra consist two types bands with strongly different characteristics. The ultraviolet band consists components, arising electronic transitions which correspond to [Formula: see text] and in a free Bi(3+) ion. At low temperatures, mainly lower-energy component...
For the first time, photoluminescence of PbWO 4 :Bi crystals with different bismuth contents is studied by time‐resolved spectroscopy methods at 4.2–300 K. Photo‐thermally stimulated processes electron and hole centers creation under selective UV irradiation crystal in 3–5 eV energy range 4.2–200 K temperature are clarified, optically created identified thermally luminescence spin resonance methods. The 2.2 emission crystals, excited Bi 3+ ‐related absorption band overlapped exciton band,...
Abstract Luminescence from the exciton‐ and defect‐related states photo‐thermally stimulated disintegration of these under selective UV irradiation were studied in PbWO 4 :Mo, Ce crystal compared with characteristics other undoped doped crystals different origin. For first time, various localized exciton identified their decay into stable defects was found. Different positions, halfwidths temperature dependences observed for blue emission spectrum explained by presence strongly overlapping...