A5052354171- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Advanced Surface Polishing Techniques
- Microstructure and mechanical properties
- Integrated Circuits and Semiconductor Failure Analysis
- Electromagnetic Effects on Materials
- Fullerene Chemistry and Applications
- Silicon Nanostructures and Photoluminescence
- Boron and Carbon Nanomaterials Research
- Silicon Carbide Semiconductor Technologies
- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- GaN-based semiconductor devices and materials
- Carbon Nanotubes in Composites
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Metallurgy and Material Forming
- Nuclear Physics and Applications
- Aluminum Alloy Microstructure Properties
- Aluminum Alloys Composites Properties
- Semiconductor Quantum Structures and Devices
- Intermetallics and Advanced Alloy Properties
- Advanced machining processes and optimization
- Chemical Synthesis and Characterization
Osipyan Institute of Solid State Physics RAS
2010-2023
Ural State University of Railway Transport
2022
Institute of Microelectronics Technology and High Purity Materials
2014-2021
Southern Federal University
2018-2020
Industrial University of Tyumen
2020
Russian Academy of Sciences
1995-2015
Institute of Microelectronics
2015
Brandenburg University of Technology Cottbus-Senftenberg
2002-2004
All-Russian Scientific Research Institute for Operation of Nuclear Power Plants
2004
Case Western Reserve University
1998-1999
Modern magnesium-based alloys are broadly used in various industries as well for biodegradable medical implants due to their exceptional combination of light weight, strength, and plasticity. The studied ZEK100 alloy had a nominal composition 1 wt.% zinc, 0.1 zirconium, rare earth metals (REMs) such Y, Ce, Nd, La, with the remainder being Mg. It has been observed that between solidus (Ts = 529.5 ± 0.5 °C) liquidus temperature (Tl 645 5 °C), Mg/Mg grain boundaries can contain either droplets...
Magnesium-based alloys are highly sought after in the industry due to their lightweight and reliable strength. However, hexagonal crystal structure of magnesium results mechanical properties’ anisotropy. This anisotropy is effectively addressed by alloying with elements like zirconium, zinc, rare earth metals (REM). The addition these promotes rapid seed formation, yielding small grains a uniform orientation distribution, thereby reducing Despite benefits, formation intermetallic phases (IP)...
In this work we have observed a significant increase of unlocking stress for dislocations in Cz-Si caused by the microwave magnetic field condition spin resonance corresponding to g-factor value about 2.0. The result can be interpreted terms spin-dependent reactions oxygen accumulated at dislocations. However, specific atomistic model effect is still missing. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
The effect of tin content in an Al-Sn alloy the range from 0 to 100 at.% on its mechanical properties was studied. An increase leads a monotonic decrease microhardness and conditional yield stress 305 63 MPa 32 5 MPa, respectively. In addition, Young’s modulus shear decreases 65 52 GPa 24 20 GPa, matrix 50 strength carbon fiber/aluminum-tin-matrix (CF/Al-Sn) composite wire subject three-point bending also investigated. Increasing up linear 1450 2365 which is due effective fiber 89 at.%....
We investigated the development of dislocation-related DLTS spectra in n-CZ-Si crystals with small (about 7.104 cm-2) number long individual dislocations depending on distance L that traveled during deformation at 600oC and velocity dislocations. found a typical signal appeared only when significant is more than 150-200μm, it depended strongly dislocation velocity. The results were interpreted assumption corresponds to some core defects atomic impurities accumulated their slow motion. At...
The evolution of kink pairs on dislocations in Ge single crystals under two-level intermittent loading has been studied order to reveal modes one-dimensional transport a random environment. Experimental evidence obtained for the anomalous nonlinear drift predicted earlier by theory.
Abstract Load-displacement indentation tests have been performed in Ge single crystals on a newly designed displacement-sensitive hardness tester the temperature range 20–450°C. The deformation substructure vicinity of impressions was investigated using selective etching. energy dissipated during loading-unloading cycle has measured and compared with extent structure zone. Mechanisms plastic flow fracture are discussed.
A newly designed displacement-sensitive hardness tester capable of performing load-displacement experiments in the temperature range 20 to 800 °C is described. Load-displacement indentation tests have been performed 9.4 and 21 mol% Y2O3 fully stabilized cubic ZrO2 single crystals. The effect alloying concentration on deformation substructure vicinity impressions was investigated using selective etching. energy dissipated during loading–unloading cycle has measured compared with extent...
A comparative study of multicrystalline Si based solar cells and plastically deformed single crystalline by the EBIC, LBIC XBIC methods as well a computer simulation were carried out. The measurements realized on laboratory X-ray source. Simulations contrast values for grain boundaries, dislocations spherical precipitates out different diffusion length beam diameter values. It is shown that two-dimensional defects in crystals with large enough can be few times higher than EBIC mode, i.e....
Abstract The recombination properties of dislocation trails formed behind moving dislocations in plastically deformed Si have been investigated by the electron beam induced current and laser methods. It is found that for with a velocity lower than 10 –5 cm/s contrast does not noticeably depend on value. shown type unique parameter determining activity defects trails. A bending near surface layers also to affect defect formation (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Kink dynamics on dislocations in Si is studied a wide stress range (up to 150 MPa) using the intermittent loading (IL) technique. At low stresses (0 7 two-level IL employed selective etching reveal dislocations. Dependencies are obtained of mean dislocation displacements pulse and pause durations, as well sign values acting during separation. Experimental data analyzed framework kinetic model taking into account diffusion drift kinks. A new method for measurements dynamical properties...
Formation of the dislocation trails (DTs) left at slip plane behind expanding half-loops is studied in Cz-Si plastically deformed 600°C using selective chemical etching and EBIC LBIC techniques which are sensitive to defect recombination activity. It found that qualitatively different for expanded from tensile compressed surfaces bent sample. In part, DTs with strongest contrast always revealed 60oarm half-loops, while invisible (if exits all) another arm bottom segment. The dissimilar...
Dislocation trails, the quasi‐2D defects left behind gliding dislocations, are studied in terms of dislocation motion geometry. The individual half‐loops introduced silicon crystals at 600 °C from sources on tensile {100} surface. electrically active dislocations and trails revealed by their recombination activity using LBIC EBIC techniques. It is found that only one 60° segment half‐loop creates trail, while screw differently aligned segments do not. Reversal observed to alternate role...