A5034260619- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Advanced Surface Polishing Techniques
- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Solidification and crystal growth phenomena
- Nanowire Synthesis and Applications
- Copper Interconnects and Reliability
- Advanced ceramic materials synthesis
- Electron and X-Ray Spectroscopy Techniques
- Metal and Thin Film Mechanics
- Advancements in Semiconductor Devices and Circuit Design
- Aluminum Alloy Microstructure Properties
- Metallurgical Processes and Thermodynamics
- Theoretical and Computational Physics
- Microstructure and mechanical properties
- Metallurgy and Material Forming
- Diamond and Carbon-based Materials Research
- Nonlinear Dynamics and Pattern Formation
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2014-2025
Centre National de la Recherche Scientifique
2012-2022
Aix-Marseille Université
2009-2022
Université de Toulon
2013-2020
Institute of Microelectronics Technology and High Purity Materials
2013
Institut Fresnel
2005-2011
Architecture, Territoire, Environnement
2001-2008
Well-controlled population of dislocations are introduced in 4H-SiC by bending cantilever mode and annealing between 400 700°C. The defects consist double stacking faults, each bound a pair 30° Si(g) partial dislocations, the expansion which is asymmetric. velocity individual directly measured as function stress temperature on surface samples etched after deformation. activation energies dislocation pairs strongly dependent, ranging 1.25 1.7eV. These values lower than ones derived from...
Defects introduced in N-doped 4H-SiC by surface scratching and bending at 823 K or 973 were characterised weak beam-dark field transmission electron microscopy (TEM), high-resolution TEM (HRTEM), large-angle convergent beam diffraction (LACBED), image analysis dislocation core reconstructions. They consist of double stacking faults (DSFs) dragged partial (PD) pairs planes which the Si–C dumbbells have same orientation. The PDs forming a pair always Burgers vectors. reconstructions prove that...
The electrical and optical properties of stacking faults (SFs), introduced in 4H-SiC by plastic deformation the brittle domain temperature (823 K 973 K), were studied cathodoluminescence electron beam induced current (EBIC) methods. As expected from previous studies, at K, all SFs generated found to be double (DSFs) 823 latter also constituted major part defects. Rather surprisingly, addition DSFs, single (SSFs) revealed but only very near defect nucleation area. Moreover, an inversion DSF...
Well-controlled population of dislocations are introduced in 4H-SiC by bending cantilever mode and annealing at temperature ranging from 400 °C to 700 °C. The introduced-defects consist double stacking faults (DSFs) bound 30° Si(g) partial dislocations. Their expansion is asymmetric with a velocity directly measured on the surface KOH etched-samples after deformation. Values activation energy stress exponent given, formation DSFs discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
One of the key issues to be resolved improve performance silicon solar cells is reduce crystalline defect formation and propagation during growth-process fabrication step. For this purpose, generation structural defects such as grain boundaries dislocations in must understood characterized. Here, situ X-ray diffraction imaging, historically named topography, combined with radiography imaging analyse development crystal before, after crystallization. Two individual indirect detector systems...
The ribbon on sacrificial template (RST) process is a direct‐wafering technology with specific ability for high throughput and thin multicrystalline wafer production, in the range of 60‐140 μm. Mechanical electrical properties RST material were investigated. Ball ring four‐point bending tests showed good fracture stress values up to 260 MPa. conversion efficiency potential passivated emitter rear cells (PERC) made out from material, around 16%, shown be limited by defects reducing minority...
Silicon samples were gold-diffused at different temperatures (870–950 °C) and implanted with He ions 1.6 MeV fluences ranging from 2 × 1016 up to 1017 cm—2. The implantation induced defects observed by conventional high resolution cross section electron microscopy found be essentially cavities 10 100 nm in size which are faceted mainly along {111}, but also {110} {100} planes. located the sample depth predicted transport range of matter simulation. Secondary ion mass spectroscopy profiles...
4H-SiC samples were bent in compression mode at temperature ranging from 400°C to 700°C. The introduced-defects identified by Weak Beam (WB) and High Resolution Transmission Electron Microscopy (HRTEM) techniques. They consist of double stacking faults bound 30° Si(g) partial dislocations whose glide locally transforms the material its cubic phase. velocity was measured after chemical etching sample surface. formation expansion are discussed.
Large-angle convergent-beam electron diffraction analysis was successfully performed on pairs of partial dislocations so close that their effect Bragg lines overlap. These pairs, dragging 3C layers, were nucleated by mechanical deformation 4H-SiC. Splitting crossing a dislocation pair can be interpreted as resulting from single having Burgers vector equal to the sum two ones. rules using phase-shifted reflections () are also given depending phase shift produced lamellae. results give...
The impact of the thermal field in a directional solidification furnace on generation and propagation dislocations is investigated intrinsic floating zone single crystal silicon. Seeds with different crystallographic orientations are wire‐cut from mono‐crystalline wafers dislocation sources solely left at edges. Thermal annealing experiments carried out situ European Synchrotron Radiation Facility (ESRF) evolution silicon crystalline quality studied by X‐ray diffraction imaging technique. At...