We have investigated the gettering of transition metals in multicrystalline silicon wafers during a phosphorus emitter diffusion for solar cell processing. The results show that mainly regions high initial recombination lifetime exhibit significant enhancement upon gettering. Nevertheless, metal profiles extracted by secondary ion mass spectrometry region low reveal gradients Cr, Fe, and Cu concentrations towards surface after diffusion, without exhibiting lifetime. In higher lifetime,...

A model for the combined effect of dislocations and grain boundaries on minority carrier lifetime has been developed. Lifetime varies with dislocation density, boundary misorientation, coincidence site lattice (CSL) nature boundaries. Minority was measured high spatial resolution (50 μm) using density imaging (CDI) technique a silicon nitride passivated multicrystalline sample. Dislocation same sample by image recognition optical microscope pictures Secco etched surface. Grain were then...

In this work, we applied internal quantum efficiency mapping to study the recombination activity of grain boundaries in High Performance Multicrystalline Silicon under different processing conditions. Wafers were divided into groups and underwent thermal processing, consisting phosphorus diffusion gettering surface passivation with hydrogen rich layers. After these treatments, wafers processed heterojunction intrinsic thin layer solar cells. Light Beam Induced Current Electron Backscatter...

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si share lifetime-limiting defect types have different relative concentrations distributions. shows substantial lifetime improvement after P-gettering compared mc-Si, chiefly...

The current paper investigates the structure of low‐lifetime areas observed in a <110>‐oriented mono‐like silicon ingot grown from monocrystalline seeds. These are related to dislocation clusters forming at seed junctions and several generation mechanisms discussed. Dislocations generated due physical contact between seeds could only be completely avoided by introducing gaps Large were, however, found suffer alternative processes not small gaps. peripheral grains does necessarily move...

We report results from a national project about impurities in high performance multicrystalline silicon: Contamination sources, transport routes, interaction with crystal defects and impact on solar cell efficiency parameters. Several ingots were produced lab scale furnace. Growth parameters crucible types varied, purity quartz crucibles compared to novel silicon nitride crucibles. The material was characterized by range of methods including FTIR, GDMS, NAA, EBSD, dislocation etching,...

The current work aimed to demonstrate the application of a technique where white light interferometry (WLI) and Laue X-ray crystallography scanner characterisation were combined study chemical etching response diamond cut multi-crystalline Si (mc-Si) wafers. Using this technique, effect different texturing additives (isopropyl alcohol, natrium hypochlorite) was evaluated by examining topography mc-Si surfaces before after etching. responses monocrystalline wafers (1 0 0), 1 0) 1)...

Wafers from three heights and two different lateral positions (corner centre) of four industrial multicrystalline silicon ingots were analysed with respect to their grain structure dislocation density. Three the non-seeded one ingot was seeded. It found that there is a strong correlation between ratio densities (coincidence site lattice) CSL boundaries high angle in bottom block cluster density higher block. In general, seeded blocks, both corner centre block, have lower than which displayed...

In principle, growing a dislocation-free Czochralski silicon ingot is possible if the growth process kept stable and below critical resolved shear stress value. However, in practice, considerable proportion of Si ingots are remelted due to generation dislocations or so-called structure loss. The assessment failed crucial step toward higher yield. characterization challenging their high brittleness concentration related slip. this work, we develop non-destructive method investigate that have...

We investigated impact of type crystal defects in multicrystalline Si (mc-Si) on electrical properties and their change after gettering process impurities. A bundle dislocations gives negative the process, while Σ3 grain boundaries does not affect at all. In addition, we categorized random mc-Si by contact angle between adjacent dendrite crystals to form boundary. Change contrast photoluminescence intensity around boundary was found systematically vary angle, which showed good correlation...

Abstract Silicon is the dominant material for production of solar cells. Research work constantly aims at improving quality silicon materials to achieve higher solar‐cell conversion efficiencies. It has been demonstrated that defects and impurities, often rising during ingot due presence impurity sources throughout value chain (e.g. feedstock, crucible coating, furnace atmosphere, etc.), have a detrimental effect on device performances. Crystallization first step in chain. During...

The interfacial structure of coincidence site lattice grain boundaries in multi-crystalline silicon plays a decisive role their electrical behavior as revealed by high-resolution (scanning) transmission electron microscopy investigations. Considering only the global misorientation adjacent grains can lead to false correlation between structural and properties boundary. boundary habit plane well local deviations orientation that induce additional defects need be analyzed. Indeed, Σ9 {221}...

The microstructure of commonly occurring dislocation patterns in industrial directionally solidified multicrystalline silicon has been systematically studied by light microscopy, electron backscatter diffraction, and transmission microscopy. work focused on clusters wafers near the top cast blocks. In {111} grain surface, arrays parallel to {110} plane traces are lying rows planes inclined mainly 〈112〉30∘ orientation. configuration suggests that may result from a recovery process....

The microstructure of highly dislocated stacking fault regions (dislocation density >106 cm−2) in industrial cast multicrystalline silicon has been investigated by light microscopy, scanning electron and transmission microscopy. Our observations indicate that faults form strong barriers to lattice dislocation movement the formation sub grain boundaries. Stepped curved edges appear generate dislocations. suggest play an important role plasticity as well dislocations silicon.

Silicon nitride crucibles have the potential to replace silica and reduce cost of silicon crystallization because their reusability potential. Till date, crucibles' heat treatment before each use is a prerequisite achieve non-wetting conditions that needed facilitate ingot release hence enable reusability. Yet, no studies examined influence on durability. The present investigation focuses its impact lifetime. Repeated heat-treatments in air at above 1100 °C leads crucible fracture....