Ashley E. Morishige

ORCID: 0000-0001-9352-8741
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About
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Research Areas
  • Silicon and Solar Cell Technologies
  • Thin-Film Transistor Technologies
  • Semiconductor materials and interfaces
  • Silicon Nanostructures and Photoluminescence
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advancements in Semiconductor Devices and Circuit Design
  • Electron and X-Ray Spectroscopy Techniques
  • Chalcogenide Semiconductor Thin Films
  • Semiconductor materials and devices
  • Photovoltaic System Optimization Techniques
  • Additive Manufacturing and 3D Printing Technologies
  • Perovskite Materials and Applications
  • X-ray Spectroscopy and Fluorescence Analysis
  • CCD and CMOS Imaging Sensors
  • Agriculture Sustainability and Environmental Impact
  • Industrial Vision Systems and Defect Detection
  • Ion-surface interactions and analysis
  • Solidification and crystal growth phenomena
  • Silicon Carbide Semiconductor Technologies
  • Pasture and Agricultural Systems
  • Metal Extraction and Bioleaching
  • Ruminant Nutrition and Digestive Physiology
  • Additive Manufacturing Materials and Processes
  • solar cell performance optimization
  • Climate change impacts on agriculture

Desktop Genetics (United Kingdom)
2022

Desktop Metal (United States)
2022

Massachusetts Institute of Technology
2012-2019

University of Konstanz
2018

1366 Technologies (United States)
2017

We identify two engineering solutions to mitigate light-induced degradation (LID) in p-type multicrystalline silicon passivated emitter and rear cells, including modification of metallization firing temperature wafer quality. Lifetime measurements on etched-back samples confirm that LID has a strong bulk component. Spatially resolved lifetime maps indicate the defects responsible for are dispersed ubiquitously across wafer. Reversibility upon low-temperature annealing suggests...

10.1109/jphotov.2016.2556981 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2016-05-23

The relationship between charge-carrier lifetime and the tolerance of lead halide perovskite (LHP) solar cells to intrinsic point defects has drawn much attention by helping explain rapid improvements in device efficiencies. However, little is known about how cell performance LHPs are affected extrinsic (i.e., impurities), including those that common manufacturing environments introduce deep levels other semiconductors. Here, we evaluate LHP iron introduced via intentional contamination...

10.1021/acsnano.7b02734 article EN ACS Nano 2017-06-28

When untreated, light-induced degradation (LID) of p-type multicrystalline silicon (mc-Si)-based passivated emitter and rear cell (PERC) modules can reduce power output by up to 10% relative during sun-soaking under open-circuit conditions. Identifying the root cause this form LID has been subject several recent investigations. Lifetime spectroscopy analysis, including both injection temperature dependencies (IDLS TIDLS), may offer insight into root-cause defect(s). In paper, illustrate...

10.1109/jphotov.2016.2606699 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2016-09-26

While progress has been made in developing engineering solutions and understanding light- elevated temperature-induced degradation (LeTID) p-type multicrystalline silicon (mc-Si), open questions remain regarding the root cause of LeTID. Previously, lifetime spectroscopy (mc-Si) passivated emitter rear cell semifabricates unaffected degraded states enabled identification effective recombination parameters responsible defect. To gain further insight into LeTID, this paper, we measure...

10.1109/jphotov.2017.2695496 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2017-05-03

The root cause of light- and elevated temperature-induced degradation (LeTID) in multicrystalline silicon p-type passivated emitter rear cell (PERC) devices is still unknown. Microwave-induced remote hydrogen plasma (MIRHP) employed to vary the concentration bulk separate effects firing temperature LeTID-affected wafers. We find that required for occur, samples fired prior introduction do not degrade. Importantly, with have been degrade, implying time-temperature profile does LeTID....

10.1063/1.5041756 article EN Journal of Applied Physics 2018-08-22

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as dopant source in the manufacturing of crystalline silicon solar cells. Although it has been addressed research topic for long time, there still lack comprehensive understanding aspects such growth, chemical composition, possible phosphorus depletion, resulting in-diffused profiles, gettering behavior silicon, and finally metal-contact formation. This paper addresses these different...

10.1063/1.4949326 article EN Journal of Applied Physics 2016-05-13

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of mc-Si and HPMC-Si. Microanalytical techniques demonstrate that HPMC-Si share lifetime-limiting defect types have different relative concentrations distributions. shows substantial lifetime improvement after P-gettering compared mc-Si, chiefly...

10.1109/jphotov.2016.2540246 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2016-04-05

Light- and elevated temperature-induced degradation (LeTID) is a detrimental effect observed under operating conditions in p-type multicrystalline silicon (mc-Si) solar cells. In this contribution, we employ synchrotron-based techniques to study the dissolution of precipitates due different firing processes at grain boundaries LeTID-affected mc-Si. The synchrotron measurements show clear collocated metal during firing. We compare our observations with behavior same wafers. experimental...

10.1109/jphotov.2018.2791411 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2018-02-02

Chromium (Cr) can degrade silicon wafer-based solar cell efficiencies at concentrations as low 1010 cm−3. In this contribution, we employ synchrotron-based X-ray fluorescence microscopy to study chromium distributions in multicrystalline as-grown material and after phosphorous diffusion. We complement quantified precipitate size spatial distribution with interstitial Cr concentration minority carrier lifetime measurements provide insight into gettering kinetics offer suggestions for...

10.1063/1.4921619 article EN Applied Physics Letters 2015-05-18

Solar cells based on n-type multicrystalline silicon (mc-Si) wafers are a promising path to reduce the cost per kWh of photovoltaics; however, full potential material and how optimally process it still unknown. Process optimization requires knowledge response metal-silicide precipitate distribution processing, which has yet be directly measured quantified. To supply this missing piece, we use synchrotron-based micro-X-ray fluorescence (μ-XRF) quantitatively map >250 metal-rich...

10.1063/1.4950765 article EN Applied Physics Letters 2016-05-16

Customized solar cell processing based on input material quality has the potential to increase performance of contaminated regions multicrystalline silicon ingots. This provides an opportunity improve yield and device efficiency without substantially reducing overall throughput. Simulations experiments show that in wafers from top border ingot containing as-grown iron concentrations ≳10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> cm...

10.1109/jphotov.2014.2349736 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2014-09-10

Abstract To meet rising demands for agricultural products, existing lands must either produce more or expand in area. Yield gaps (YGs)—the difference between current and potential yield of systems—indicate the ability to increase output while holding land area constant. Here, we assess YGs global grazed‐only permanent pasture using a climate binning approach. We create snapshot circa 2000 empirical yields meat milk production from cattle, sheep, goats by sorting pastures into bins defined...

10.1111/gcb.14925 article EN Global Change Biology 2019-11-15

Material defects govern the performance of a wide range energy conversion and storage devices, including photovoltaics, thermoelectrics, batteries. The success large‐scale, cost‐effective manufacturing hinges upon rigorous material optimization to mitigate deleterious defects. processing simulations have potential accelerate novel technology development by modeling defect‐evolution thermodynamics kinetics during raw materials into devices. Here, predictive process framework is presented for...

10.1002/aenm.201400459 article EN Advanced Energy Materials 2014-05-13

Ion implantation is a promising method to implement high-performance emitter for crystalline silicon solar cells. However, an implanted redistributes and mitigates harmful metal impurities different degree than diffused one. This paper quantitatively assesses the effect of iron contamination level on bulk diffusion length open-circuit voltage phosphorus-implanted cells manufactured with varying gettering parameters. By synchrotron-based micro-X-ray fluorescence measurements, we directly...

10.1109/jphotov.2016.2576680 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2016-06-27

The capital expense (capex) of conventional crystal growth methods is a barrier to sustainable the photovoltaic industry. It challenging for innovative techniques displace due low dislocation density and high lifetime required efficiency devices. One promising innovation in noncontact crucible method (NOC-Si), which combines aspects Czochralski (Cz) casting. This material has potential satisfy dual requirements, with capex likely between that Cz (high capex) multicrystalline silicon (mc-Si,...

10.1016/j.egypro.2016.07.075 article EN Energy Procedia 2016-08-01

The high capital expenditure (capex) necessary to manufacture crystalline silicon PV modules negatively affects the levelized cost of electricity (¢/kWh) and critically impacts rate at which industry can scale up. Wafer, cell, module fabrication with thin free-standing wafers is one key reduce capex. Thin capex associated refining wafer fabrication, together sum 58% total manufacturing. In addition, directly significantly variable costs. However, introducing 50 μm into today's manufacturing...

10.1016/j.egypro.2017.09.252 article EN Energy Procedia 2017-09-01

The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase &amp;gt;500× during phosphorus gettering. We employ kinetic defect simulations microstructural characterization techniques elucidate the root cause of this exceptional gettering response. Simulations deep-level transient spectroscopy (DLTS) indicate that a high concentration point defects (likely Pt) “locked in” fast (60 °C/min) cooling epi wafer growth. fine...

10.1063/1.4940947 article EN Journal of Applied Physics 2016-02-08

Optimizing photovoltaic (PV) devices requires characterization and optimization across several length scales, from centimeters to nanometers. Synchrotron-based micro-X-ray fluorescence spectromicroscopy (μ-XRF) is a valuable link in the PV-related material device suite. μ-XRF maps of elemental distributions PV materials have high spatial resolution excellent sensitivity can be measured on absorber full devices. Recently, we implemented on-the-fly data collection (flyscan) at Beamline 2-ID-D...

10.1109/jphotov.2017.2681199 article EN publisher-specific-oa IEEE Journal of Photovoltaics 2017-04-10

Impurity contamination in thin-film solar cells remains an uncertain risk due to the little-known impact of impurities on recombination. Building upon previous work, which we intentionally contaminated lead halide perovskite (LHP) with iron, further examine distribution and charge state iron-induced defects LHP films using synchrotron-based X-ray techniques. absorption measurements suggest that iron-rich regions, form among iron feedstock concentrations exceed 100 ppm, most closely resemble...

10.1109/jphotov.2017.2775156 article EN IEEE Journal of Photovoltaics 2017-12-12

In multicrystalline silicon for photovoltaic applications, high concentrations of iron are usually found, which deteriorate material performance. Due to the limited solubility in silicon, only a small fraction total concentration is present as interstitial solute atoms while vast majority silicide precipates. The interstitials can be effectively reduced during phosphorus diffusion gettering (PDG), but this strongly depends on size and density precipitates, partly dissolve high-temperature...

10.4028/www.scientific.net/ssp.205-206.15 article EN Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena 2013-10-07

Synchrotron-based μ-XRF is a powerful tool to measure elemental distributions non-destructively with high spatial resolution and excellent sensitivity. Recently, we implemented on-the-fly data collection (flyscan) at Beamline 2-ID-D the Advanced Photon Source Argonne National Laboratory, making acquisition faster than 300 ms per pixel practical. We show that flyscan mode enables (a) traditional maps be completed twenty times more quickly while maintaining reasonably sensitivity, (b)...

10.1109/pvsc.2016.7749980 article EN 2016-06-01
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