- X-ray Diffraction in Crystallography
- Crystallization and Solubility Studies
- Ferroelectric and Piezoelectric Materials
- Acoustic Wave Resonator Technologies
- Electronic and Structural Properties of Oxides
- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Wireless Power Transfer Systems
- Advanced MEMS and NEMS Technologies
- Medical Image Segmentation Techniques
- Analytical Chemistry and Sensors
- Electrical and Thermal Properties of Materials
- Advanced Semiconductor Detectors and Materials
- Microfluidic and Capillary Electrophoresis Applications
- Luminescence Properties of Advanced Materials
- Advanced Sensor Technologies Research
- Advanced Battery Materials and Technologies
- Advancements in Battery Materials
- Advanced Sensor and Energy Harvesting Materials
- GaN-based semiconductor devices and materials
- Gas Sensing Nanomaterials and Sensors
- Elasticity and Material Modeling
- Photorefractive and Nonlinear Optics
- Characterization and Applications of Magnetic Nanoparticles
- Ombudsman and Human Rights
North University of China
2014-2024
Hunan Institute of Science and Technology
2024
China University of Geosciences
2024
Guangzhou University
2024
Nanjing University
2014-2023
Collaborative Innovation Center of Advanced Microstructures
2014-2023
Harbin Institute of Technology
2021
Chinese Academy of Medical Sciences & Peking Union Medical College
2021
Qingdao University
2014
Institute of Acoustics
1987
Recently, doped HfO 2 thin films have attracted considerable attention because of promising applications in complementary metal–oxide–semiconductor (CMOS)‐compatible ferroelectric memories. Herein, the properties and polarization fatigue La:HfO thin‐film capacitors are reported. By varying substrate lattice constant film thickness, a robust remanent ≈16 μC cm −2 is achieved 12 nm‐thick Pt/La:HfO /La 0.67 Sr 0.33 MnO 3 capacitor. Fatigue measurements conducted using designed pulse sequences,...
Electrical switching of spontaneous polarizations has been intensively studied for decades in ferroelectric thin films non-volatile memory applications. Recent advances have shown that the polarization ultrathin can also be switched by a mechanical loading force owing to flexoelectric effect. In this work, we report strain effects on 12-unit-cell-thick BaTiO3 grown coherently SrRuO3-buffered SrTiO3, DyScO3, and GdScO3 substrates. The threshold reversal increases with increasing in-plane...
Wood is a ubiquitous material, widely used in human society, that features naturally abundant, aligned longitudinal cells (e.g., tracheids softwood and fibers/vessels hardwood) with diameters of ≈50-1000 µm. Here, the realization of, fine patterns on wood surface ranging size from 40 nm to 50 µm by precision imprinting described. The enabled releasing cellulose fibril aggregates bondage lignin through delignification process, then wet condition fixing designed configuration dry state....
A wireless passive temperature sensor is designed on the basis of a resonant circuit, fabricated multilayer high cofired ceramic (HTCC) tapes, and measured with an antenna in coupling way. Alumina used as substrate by lamination sintering techniques, circuit composed planar spiral inductor parallel plate capacitor printed formed screen-printing postfiring processes. Since permittivity becomes higher rises, frequency decreases due to increasing capacitance circuit. Measurements input...
Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films insulator (LNOI) are experimentally characterized. Two sets specimens with different thicknesses varying from submicron to microns selected. For micron thick samples (∼28 μm), structures achieved by pulsed electric field poling electrodes patterned via photolithography. No structure deterioration has been observed for a month as inspected using polarizing optical microscopy etching. As (540 nm)...
This paper presents an embedded wireless passive temperature sensor for measurements in high-temperature applications, such as compressors and turbine engines. The performance of the was improved by optimizing its parameters. A high-temperature-resistant material used, structure design introduced to enable operate environments. series <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> resonant circuit containing a fixed inductance coil...
Perovskite NdGaO3 (NGO) films, 2–20 unit cells in thickness, have been deposited epitaxially on {001} TiO2-terminated SrTiO3 substrates at different O2 pressures. The NdGaO3/SrTiO3 (STO) interface becomes metallic as the overlayer is more than 4 thickness. sheet carrier density above 1013 cm–2 and temperature-independent from 300 down to 7 K. Similar has also achieved {111} NdGaO3/SrTiO3. Post-annealing does not change transport characteristics significantly. These indicate that oxygen...
Diisopropylammonium bromide (DIPAB) has attracted great attention as a molecular ferroelectric with large spontaneous polarization and high Curie temperature. It is hard to grow the phase DIPAB because of appearance non-ferroelectric at room Here, thin film was successfully fabricated on Si substrate using spin coating method from aqueous solution via 12-crown-4 addition The thickness hundreds nanometers distributed discontinuously in narrow strips. direction along strip. Piezoresponse force...
In this work, we propose a flexible ferroelectric tunnel junction (FTJ) with nanometer-thick single-crystalline BaTiO3 barrier prepared by exfoliating and transferring epitaxial thin films onto poly(styrenesulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) conductive electrodes using water-soluble Sr3Al2O6 sacrificial layer. The transferred freestanding remain single crystalline exhibit clear hysteresis, no matter being flat or bent. A combined piezoelectric force microscopy...
Abstract A recent breakthrough in mechanical polarization switching provides a valuable handle to achieve nanoscale ferroelectric domain control. This flexoelectric is usually observed ultrathin films (≈10 nm or less thickness), where large strain gradient possible. However, from the point of view device applications, it will be more attractive thicker films. Here, experimentally demonstrated that by introducing ferroelastic ‐domains PbZr 0.1 Ti 0.9 O 3 potential barrier against 180° c...
A silicone/quartz capillary microchip (SQCM) coupled with an ultranarrow sampling fracture was for the first time constructed without any micromachining. The SQCM could be used direct determination of carbohydrates at a detection potential +0.8 V (vs Ag/AgCl) copper microdisk electrode. conveniently formed on quartz capillary, which fixed by frame poly(dimethylsiloxane) (PDMS). designed suppressed leakage sample, thus simplifying power supply. Furthermore, it thinned sample plug enhancing...
An LC resonant pressure sensor with improved performance is presented in this paper. The designed a buried structure, which protects the electrical components from contact harsh environments and reduces resonant-frequency drift of high-temperature environments. pressure-sensitive membrane optimized according to small-deflection-plate theory, allows operate high-pressure fabricated using low-temperature co-fired ceramic (LTCC) technology, fugitive film used create completed sealed embedded...
A noncontact wireless passive pressure sensor based on alumina ceramic for measurement is presented in this paper. faithful signal harsh environment captured through sensing, and a novel antenna design method developed to increase the distance between sensor. The fabricated using no-co-fired technology, properties of platinum ensure feasibility high-temperature environments. experimental results show that coupled can be up 5.5 cm, designed sensor, featuring improved structural parameters,...
LaAlO3 ultrathin films, 10 unit cells in thickness, have been deposited epitaxially on TiO2-terminated (001) SrTiO3 substrates with various O2 pressures. Electromechanical response from the LaAlO3/SrTiO3 heterostructures is studied using combined piezoresponse force microscopy, electrostatic and scanning Kelvin probe microscopy. Oxygen vacancies are found to be responsible for observed piezoelectric but only samples an oxygen pressure lower than 10–5 mbar. However, ambient humidity...
Interfacial fine structures of bare LaAlO3/SrTiO3 (LAO/STO) heterostructures are compared with those LAO/STO capped upward-polarized Pb(Zr0.1,Ti0.9)O3 (PZTup) or downward-polarized Pb(Zr0.5,Ti0.5)O3 (PZTdown) overlayers by aberration-corrected scanning transmission electron microscopy experiments. By combining the acquired energy-loss spectroscopy mapping, we able to directly observe transfer from Ti4+ Ti3+ and ionic displacements at interface PZTdown/LAO/STO heterostructure unit cell cell....
Single-phase multiferroic materials with large polarization and magnetization at room temperature are highly desirable but still rather rare. In this study, tetragonal-like $\mathrm{BiF}{\mathrm{e}}_{0.5}\mathrm{C}{\mathrm{o}}_{0.5}{\mathrm{O}}_{3}$ films have been synthesized systematically characterized. For its normal state, both the polar structure ferrimagnetic net evidenced in experimental measurements further confirmed using first-principle calculations. Furthermore, an abnormal state...
By engineering strain gradients in dielectrics, the flexoelectric effect can be created, which yields interesting physical properties via electromechanical coupling. Here, we report flexoelectric-induced photovoltaic effects centrosymmetric LaFeO3 thin-film heterostructures grown on flexible mica substrates, partial relaxation of lattice-mismatch against LaAlO3 stretching layers results giant and pronounced electrical polarizations. The polarization modulates band alignment leads to...
Transparent, conducting p-La1−xSrxCrO3 epitaxial layers were deposited on Nb-doped SrTiO3(001) by oxygen-assisted molecular beam epitaxy to form structurally coherent p-n junctions. X-ray photoelectron spectroscopy reveals a type II or “staggered” band alignment, with valence and conduction offsets of 2.0 eV 0.9 eV, respectively. Diodes fabricated from these heterojunctions exhibit rectifying behavior, the I-V characteristics are different those for traditional semiconductor A rather large...
It is necessary but challenging to verify topological surface states of α-Sn by electrical transport. In this work, we demonstrate conclusive transport evidence on properties an film grown a CdTe substrate molecular beam epitaxy. A Berry phase determined from Shubnikov–de Haas oscillations 0.98π. two-dimensional (2D) Fermi clearly demonstrated angle-dependent oscillations. We believe the nontrivial topology originates 2D Dirac fermions states. addition, both anisotropic magneto-resistance...