A5101551279- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Advanced Surface Polishing Techniques
- Advanced Multi-Objective Optimization Algorithms
- Ion-surface interactions and analysis
- Topology Optimization in Engineering
- Solidification and crystal growth phenomena
- Integrated Circuits and Semiconductor Failure Analysis
- Composite Structure Analysis and Optimization
- Nanowire Synthesis and Applications
- Photovoltaic System Optimization Techniques
- Tribology and Wear Analysis
- Orthopaedic implants and arthroplasty
- Aluminum Alloys Composites Properties
- solar cell performance optimization
Shandong Jiaotong University
2023
State Key Laboratory of Silicon Materials
2005-2006
Zhejiang University
2005-2006
Friedrich-Alexander-Universität Erlangen-Nürnberg
1994-1995
The mechanical strength in germanium-doped Czochralski silicon (GCz-Si) wafers has been investigated through the on-line warpage statistics analysis, indentation tests, and fracture structure measurements. It was found that wafer during manufacturing processes could be statistically suppressed by germanium doping slightly. enhancement effect of on GCz-Si shown obviously when concentration higher than 1018cm−3. Meanwhile, for both as-grown postannealed might greater compared to conventional...
Through comparison between the oxygen precipitation (OP) behaviors in heavily and lightly phosphorus (P)-doped Czochralski silicon (CZ-Si) crystals subjected to low-high two-step anneal of 600, 650, or 750 °C/8 h+1050 °C/16 h, we have found that P-doped CZ-Si, OP is much stronger case with nucleation at 600 650 °C while it some extent suppressed contrast doped CZ-Si where enhanced °C. Transmission electron microscopy investigation reveals phosphide precipitates face-centered-cubic SiP form...
Through comparing the oxygen precipitation in heavily and lightly phosphorus (P)-doped Czochralski silicon (CZ Si) specimens subjected to simulated cooling processes of ingot, we researched influences P doping on grown-in precipitates by preferential etching transmission electron microscopy (TEM). It was found that were more significant P-doped CZ Si than one. Most generated at (800–600) °C. The would change density morphology precipitation. TEM examination revealed amorphous composed tiny...
The formation of a denuded zone (DZ) and the bulk-microdefects (BMDs) region within conventional nitrogen-doped Czochralski (NCZ) silicon subjected to ramping anneals has been investigated. It was found that terminal temperature anneal should be high enough create DZ while starting low generate desirable density BMDs. Comparatively speaking, with same heat treatment, NCZ possesses higher BMDs narrower than CZ silicon. Moreover, for silicon, can initiate at relatively an appropriately Of...
Abstract A dislocation‐free silicon single crystal doped with 10 20 cm ‐3 germanium (Ge) has been grown using the Czochralski (CZ) growth technique. The Ge concentration in seed‐end and tang‐end of was 8×10 19 1.6×10 , respectively. effective segregation coefficient Ge, distribution flow pattern defects (FPDs) wafer warpage have characterized. Both equilibrium were evaluated. Then, density FPDs traced from to ingot, a suppression by doping shown. That is probably because atoms consume free...
Oxygen precipitation (OP) in the conventional and nitrogen-codoped heavily phosphorous (P)-doped Czochralski silicon (CZ-Si) wafers subjected to various low- (650–850 °C) high-temperature (1050 two-step annealing conditions have been comparatively investigated. It was found that nucleation at 650 °C led remarkable OP resulting bulk micro defect densities were nearly same both kinds of wafers. While case with 750 or 850 °C, P-doped CZ-Si featured slight OP, contrast counterpart put up...
Abstract An analytical description for high energy implantation profiles of boron and phosphorus into crystalline silicon has been developed. With this description, are simulated by using the sum two weighted Pearson IV distributions. Range parameters functions were extracted fitting them to experimental measured SIMS. After reduction dependent five in case four phosphorus, their dependence was determined. For implants, dose range included.
Abstract The formation of an oxygen precipitate denuded zone in nitrogen‐doped Czochralski (NCZ) silicon and conventional CZ subjected to ramping anneals under Ar or O 2 ambient has been investigated. It is revealed that the nitrogen doping able homogenize substantially density bulk micro‐defects associated with precipitation wafers different thermal histories initial contents. only formed specimens anneal ambient. believed could be alternative intrinsic gettering process for NCZ wafers,...