A5083054612- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Copper-based nanomaterials and applications
- Acoustic Wave Resonator Technologies
- Semiconductor Quantum Structures and Devices
- Electrocatalysts for Energy Conversion
- Catalytic Processes in Materials Science
- CO2 Reduction Techniques and Catalysts
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Fuel Cells and Related Materials
- Crystallization and Solubility Studies
- Advanced Photocatalysis Techniques
- X-ray Diffraction in Crystallography
- Ferroelectric and Piezoelectric Materials
- Gyrotron and Vacuum Electronics Research
- Silicon Nanostructures and Photoluminescence
- Terahertz technology and applications
- Catalysis for Biomass Conversion
- Gas Sensing Nanomaterials and Sensors
- Advanced battery technologies research
- Microwave Engineering and Waveguides
- Biosensors and Analytical Detection
- Radio Frequency Integrated Circuit Design
National Yang Ming Chiao Tung University
2011-2022
National Taiwan University of Science and Technology
2019
Rutgers, The State University of New Jersey
1992-2008
Zhejiang University
2007
State Key Laboratory of Silicon Materials
2007
Chaoyang University of Technology
2003
University of Colorado Colorado Springs
1995
Heteroatom doped atomically dispersed Fe1 -NC catalysts have been found to show excellent activity toward oxygen reduction reaction (ORR). However, the origin of enhanced is still controversial because structure-function relationship governing enhancement remains elusive. Herein, sulfur(S)-doped catalyst was obtained as a model, which displays superior for ORR towards traditional Fe-NC materials. 57 Fe Mössbauer spectroscopy and electron paramagnetic resonance revealed that incorporation S...
An environmentally benign antisolvent method has been developed to prepare Cu(2+)-doped ZnO nanocrystals with controllable dopant concentrations. A room temperature ionic liquid, known as a deep eutectic solvent (DES), was used the dissolve powders. Upon introduction of ZnO-containing DES into bad which shows no solvation ZnO, precipitated and grown due dramatic decrease solubility. By adding Cu(2+) ions solvent, growth from process accompanied by introduction, resulting in formation...
Abstract Heteroatom doped atomically dispersed Fe 1 ‐NC catalysts have been found to show excellent activity toward oxygen reduction reaction (ORR). However, the origin of enhanced is still controversial because structure‐function relationship governing enhancement remains elusive. Herein, sulfur( S )‐doped catalyst was obtained as a model, which displays superior for ORR towards traditional Fe‐NC materials. 57 Mössbauer spectroscopy and electron paramagnetic resonance revealed that...
We report an optimized monolithic dual-wavelength distributed feedback (DFB) laser for terahertz (THz) applications, designed to address the challenges of complexity, cost, and power efficiency in a THz transmitter. This can achieve high optical 65.93 mW. Under wide temperature range high-bias current, difference between two primary modes remains below 1 dB, with each side-mode suppression ratio exceeding 36 dB. Additionally, exhibit low relative intensity noise peaks -153.88 dB/Hz -153.46...
We have successfully developed an effective supercritical CO2 (sc-CO2) emulsion-assisted electrochemical approach for cathodic deposition of ZnO mesocrystals. The sc-CO2 was introduced along with a nonionic surfactant in the process to form emulsified electrolyte, which significantly increased supersaturation degree and promoted molecular diffusion affect crystal growth ZnO. involved generation primary nanocrystals substantially high surface energy, followed by preferred attachment...
We deposited (112¯0) nonpolar a-plane ZnO (a-ZnO) films on (011¯2) r-sapphire substrates using metalorganic chemical vapor deposition. Unit cell deformation due to interfacial strain in was determined by triple-axis x-ray diffraction. Due low symmetry of a-plane, anisotropic is observed along the [0001] (c-axis) and [11¯00] (m-axis) in-plane axes. Out-of-plane [112¯0] (a-axis) tensile relaxes for film thickness ⩾2μm. The m-axis under c-axis compressive strain. Increase increases anisotropy...
We have studied the formation of Si nanoparticles in a SiH4–Ar plasma discharge generated helical resonator type inductively coupled reactor. It is observed that particles vary sizes from 5 to 15 nm under different conditions. The were mostly spherical and made up crystalline core with 1–2 thick amorphous shell. size distribution was narrow for formed at pressure 200 mTorr, power 400 W silane flow rate 20 sccm (+980 Ar). effect dc bias applied particle collecting grids has also been studied....
Operando XAS reveals that the copper catalysts undergo a remarkable reduction to metallic state during CO 2 RR.
Using synchrotron-based x-ray magnetic spectroscopy, we report a study focusing on the local symmetry of Cu-dopant and resultant structural imperfections in mediating Cu-doped ZnO nanoparticles' ferromagnetism (FM). Prepared by an antisolvent method, Cu appeared to preferably populate basal plane with [CuO4]. This unique was antiferromagnetic nature, while electronically structurally coupled surrounded oxygen vacancies (Vo) that yielded localized FM, because strong dependency number/location...
The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon-doped epilayers (4.7×1019 9.8×1019 cm−3) were increased mobilities decreased as compared as-grown samples by rapid thermal annealing silicon nitride capped at temperatures from 500 to 900 °C. However, for more doped sample, concentration, mobility, increasing temperature higher than 700 °C, but concentration still larger those samples. Secondary ion mass spectroscopy results showed that produced no change...
GaN films were grown on c-plane sapphire substrates by low pressure metalorganic chemical vapor deposition using a buffer layer at lower temperatures. The quality and surface morphology of the strongly affected pretreatment substrate before growth epitaxial layer. pre-nitrided exhibit improved electrical optical properties over those unnitrided even though became rougher. We have achieved carrier concentration in range 2×1016–5×1017 cm−3 electron mobility 250–300 cm2/V s room temperature....
Nominally undoped and N-doped ZnO thin films were grown by plasma-assisted metalorganic chemical vapour deposition. P-type conductivity was confirmed Hall-effect measurements, not only in the but also nominally ZnO. The zinc vacancy extrinsic nitrogen acceptor states identified low-temperature photoluminescence, with energy level located at 270 meV 180 above valence-band maximum, respectively. An evident increment oxygen as well concentration p-type : N layer secondary ion mass spectroscopy.
Nonpolar a-plane (112¯0) MgxZn1−xO (a-MgxZn1−xO) films are deposited on (011¯2) r-sapphire substrates using metalorganic chemical vapor deposition with varying Mg composition (x from 0 to 0.25). Unit cell parameters determined by high-resolution triple-axis x-ray diffraction. In-plane strain along the c-axis [0001] and m-axis [11¯00] in is anisotropic increases increasing composition. The in-plane anisotropy changes a-MgxZn1−xO. Calculations carried out determine influence of content...
There has been increasing interest in high quality piezoelectric ZnO thin films. a coupling coefficient, which makes it promising for frequency, low loss SAW devices when the film is deposited on top of high-velocity substrate such as diamond or sapphire. It well known that these performance critically dependent We report epitaxial growth (1120) films R-plane sapphire substrates using MOCVD technique. The films' crystallinity and orientations were analyzed X-ray diffractions. smooth surface...
Carbon dioxide reduction reaction (CO 2 RR) is a promising approach to accomplishing net zero CO emissions. Among RR catalysts, nitrogen-doped graphene-supported single-atom catalysts show remarkable conversion rate from CO; however, the low production amount has been limited using H cell, hindering its industrial development. In this work, we synthesize nickel-single-atom catalyst and conduct in flow exhibiting -to-CO Faradaic efficiency of 96% partial current density 144 mA cm −2 . It can...
Abstract not Available.
In this paper, the GCPW-to-SIW transition using tapered slot is utilized to enhance bandwidth of uniform slot.By tapering width slot, would be increased.The fractional 42% and corresponding insertion loss in frequency range smaller than 0.2 dB.
ZnO thin films deposited on sapphire substrates are attractive for low-loss, high frequency devices. Single crystal quality of the piezoelectric film and an abrupt interface between substrate desired improving device performance. MOCVD has many advantages over other deposition techniques. We have grown epitaxial c- r-sapphire using MOCVD. The relationships Al/sub 2/O/sub 3/ were established by a combination Transmission Electron Microscopy X-Ray Diffraction ZnO-sapphire was atomically sharp....