A5103124827- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- Molecular Sensors and Ion Detection
- Copper-based nanomaterials and applications
- Luminescence and Fluorescent Materials
- Sulfur Compounds in Biology
- Silicon and Solar Cell Technologies
- Manufacturing Process and Optimization
- Semiconductor materials and interfaces
- Adversarial Robustness in Machine Learning
- Thin-Film Transistor Technologies
- Advanced Chemical Sensor Technologies
- Smart Grid Security and Resilience
- Metallurgy and Material Forming
- Circadian rhythm and melatonin
- Genetics, Aging, and Longevity in Model Organisms
- Nanowire Synthesis and Applications
- Antimicrobial agents and applications
- Industrial Technology and Control Systems
- Advanced biosensing and bioanalysis techniques
- Acoustic Wave Resonator Technologies
- Quantum Dots Synthesis And Properties
- Electrochemical sensors and biosensors
- Nitric Oxide and Endothelin Effects
Shaanxi Normal University
2023-2024
Zhejiang University
2006-2023
Jilin University
2012-2019
State Key Laboratory of Silicon Materials
2005-2010
Guizhou University
2007-2010
We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type thin films on n-type bulk substrates. The as-grown glass substrates show hole concentration of 1016–1017cm−3 and mobility 1–10cm2V−1s−1. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical shows rectifying behavior with turn-on voltage about 2.3V. Electroluminescence at room temperature has...
Li-doped, p-type ZnO thin films have been realized via dc reactive magnetron sputtering. An optimized result with a resistivity of 16.4Ωcm, Hall mobility 2.65cm2∕Vs, and hole concentration 1.44×1017cm−3 was achieved, electrically stable over month. Hall-effect measurements supported by secondary ion mass spectroscopy indicated that the substrate temperature played key role in optimizing conduction Li-doped films. Furthermore, ZnO-based p-n homojunction fabricated deposition layer on an...
We investigate photoluminescence from reproducible Li-doped p-type ZnO thin films prepared by dc reactive magnetron sputtering. The LiZn acceptor state, with an energy level located at 150meV above the valence band maximum, is identified free-to-neutral-acceptor transitions. Another deeper state 250meV emerges increased Li concentration. A broad emission centered 2.96eV attributed to a donor-acceptor pair recombination involving zinc vacancy. In addition, two chemical bonding states of Li,...
We report on intrinsic p-type ZnO thin films by plasma-assisted metal-organic chemical vapor deposition. The optimal results give a resistivity of 12.7Ωcm, Hall mobility 2.6cm2∕Vs, and hole concentration 1.88×1017cm−3. oxygen is increased in the ZnO, compared with n-type layer. Two acceptor states, energy levels located at 160 270meV above valence band maximum, are identified temperature-dependent photoluminescence. origin behavior has been ascribed to formation zinc vacancy some complex center.
Hydrogen sulfide (H2S), a crucial endogenous gasotransmitter, plays significant role in monitoring pathological and physiological processes as well the realm of food safety control. The detection H2S poses numerous challenges due to complexity biological fluids samples high demands for biocompatible probe molecules. To address these challenges, we have developed an innovative silica nanoparticle-based Förster resonance energy transfer (FRET) system with pyrene (Py) pyronine (Pyr) embedded...
Quasi-aligned ZnO nanotubes have been grown on silicon substrates by metalorganic chemical vapor deposition without using any catalyst. Two kinds of nanotubular structures were found: Nanotubes with single walls and double walls. The along the [001] direction. Room-temperature photoluminescence measurements indicate strong ultraviolet emission weak green emission. A new growth mode for these is proposed, which can be used to prepare other structures.
The authors develop a plasma-free metalorganic chemical vapour deposition method to grow N-doped p-type ZnO films. incorporation of the N acceptor and corresponding change in Fermi level are well confirmed by x-ray photoelectron spectroscopy. Temperature-dependent photoluminescence reveals acceptor-related emissions, namely, neutral acceptor-bound exciton probably donor–acceptor pair transition. In addition, typical rectifying I–V characteristics room-temperature electroluminescence from...
The authors report on reproducible growth of ZnMgO quantum dots (QDs) by a metal organic chemical vapor deposition method. Mg is introduced into ZnO QDs, as confirmed x-ray photoelectron spectroscopy and photoluminescence measurements. size, density, optical band gap QDs can be well controlled simply modulating the parameters.
ABSTRACT Polyurethane (PU) is widely used in biomedical applications owing to its excellent physical and chemical properties. As an isocyanate‐free PU material, fluorescent poly(hydroxyurethane) (FPHU) synthesized from the addition of cyclic carbonates with amines rather than toxic isocyanate diols, which reduces possible injury human due trace amounts residues. Herein, we report biocompatibility a FPHU that can be carbon dioxide, bisepoxides, diamine tandem. Of unique, exhibits strong blue...
Decarbonization of global power systems significantly increases the operational uncertainty and modeling complexity that drive necessity widely exploiting cutting-edge Deep Reinforcement Learning (DRL) technologies to realize adaptive real-time emergency control, which is last resort for system stability resiliency. The vulnerability DRL-based control scheme may lead severe real-world security issues if it can not be fully explored before implementing practically. To this end, first work...
Nominally undoped and N-doped ZnO thin films were grown by plasma-assisted metalorganic chemical vapour deposition. P-type conductivity was confirmed Hall-effect measurements, not only in the but also nominally ZnO. The zinc vacancy extrinsic nitrogen acceptor states identified low-temperature photoluminescence, with energy level located at 270 meV 180 above valence-band maximum, respectively. An evident increment oxygen as well concentration p-type : N layer secondary ion mass spectroscopy.
Abstract With the increase in inverter‐based renewable energy resources, complexity and uncertainty of low‐carbon power systems have increased significantly. Deep reinforcement learning (DRL)–based approaches been extensively studied for frequency control to overcome limitations traditional model‐based approaches. The goal DRL‐based methods primary is minimise load shedding while satisfying safety requirements, thereby reducing costs. However, vulnerabilities DRL models pose new security...
The effects of heavy doping Si on grown-in void size-density distributions and Flow Pattern Defect (FPD) Secco Etch Pit (SEPD) density are discussed. Grown-in defects studied using Scanning Infra Red Microscopy (SIRM) etching. Doping with 10^20 Ge atoms cm^-3 has a limited effect the distribution but clear FPD density. observed lower is most probably related to decrease multiple Co-doping B leads strong suppression by nearly two orders magnitude in agreement reported reduction Crystal...