A5032836814- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and devices
- Block Copolymer Self-Assembly
- Heusler alloys: electronic and magnetic properties
- Semiconductor materials and interfaces
- Advancements in Photolithography Techniques
- Gas Sensing Nanomaterials and Sensors
- Carbon Nanotubes in Composites
- Thermal Expansion and Ionic Conductivity
- Analytical Chemistry and Sensors
- Machine Learning in Materials Science
- Nanowire Synthesis and Applications
- Intermetallics and Advanced Alloy Properties
- Advanced Polymer Synthesis and Characterization
- GaN-based semiconductor devices and materials
- Quantum optics and atomic interactions
- Botulinum Toxin and Related Neurological Disorders
- Nanofabrication and Lithography Techniques
- ZnO doping and properties
- Cold Atom Physics and Bose-Einstein Condensates
- Quantum Information and Cryptography
- Thermal Radiation and Cooling Technologies
- Magnetic properties of thin films
- Quantum Dots Synthesis And Properties
Natural Resources Canada
2013-2025
BioSurfaces (United States)
2025
National Tsing Hua University
2019-2024
Government of Canada
2022
McMaster University
2013-2015
Argonne National Laboratory
2010-2015
National Changhua University of Education
2011-2012
University of California, Berkeley
2003-2012
Center for Nanoscale Materials
2011-2012
Instituto de Carboquímica
2009
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function radius. From characterizations, densities thermally-activated fixed charges trap states surface untreated (i.e., without any functionalization) nanowires are investigated while enabling accurate measurement gate oxide capacitance; therefore, leading direct assessment mobility for electrons. The is...
Selective self-limited interaction of metal precursors with self-assembled block copolymer substrates, combined the unique molecular-level management reactions enabled by atomic layer deposition process, is presented as a promising controllable way to synthesize patterned nanomaterials (e.g., Al2O3 see Figure, TiO2, etc.) uniform and tunable dimensions.
Sequential infiltration synthesis (SIS), combining stepwise molecular assembly reactions with self-assembled block copolymer (BCP) substrates, provides a new strategy to pattern nanoscopic materials in controllable way. The selective reaction of metal precursor one the pristine BCP domains is key step SIS process. Here we present straightforward selectively modify polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) thin films enable variety including SiO(2), ZnO, and W. controlled...
Block copolymer lithography is a promising approach to massively parallel, high-resolution, and low-cost patterning, but the inherently low etch resistance of polymers has limited its applicability date. In this work, challenge overcome by dramatically increasing plasma contrast polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) using spatially localized sequential infiltration synthesis (SIS) alumina. The PMMA phase self-assembled PS-b-PMMA block thin films was selectively infiltrated...
A carbon nanotube transistor array was used to detect DNA hybridization. new approach ensure specific adsorption of the nanotubes developed. The polymer poly (methylmethacrylate0.6-co-poly(ethyleneglycol)methacrylate0.15-co-N-succinimidyl methacrylate0.25) synthesized and bonded noncovalently nanotube. Aminated single-strand then attached covalently polymer. After hybridization, statistically significant changes were observed in key parameters. Hybridized traps both electrons holes, possibly...
Nanostructures generated from block copolymer self-assembly enable a variety of potential technological applications. In this article we review recent work and the current status two major emerging applications (BCP) nanostructures: lithography for microelectronics photovoltaics. We progress in BCP relation to requirements semiconductor technology roadmap. For photovoltaic applications, quest generate ideal nanostructures using BCPs directions future research.
SnTe is a promising thermoelectric material with low cost and high stability.
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS) field effect transistors was fabricated. SWNTs were grown, using chemical vapor deposition, from catalyst islands located on an NMOS decoder circuit. Massive arrays of devices, each addressed individually the circuit, rapidly characterized. The successful monolithic integration and MOS creates many possibilities, including electronically addressable sensor arrays.
Antibody-functionalized Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect prostate specific antigen (PSA). The PSA antibody was anchored the gate area through formation of carboxylate succinimdyl ester bonds with immobilized thioglycolic acid. HEMT drain-source current showed a rapid response less than 5s when target in buffer at clinical concentrations added antibody-immobilized surface. authors could wide range from 10pg∕mlto1μg∕ml. lowest detectable...
Etch resistance of two commonly used lithography resists is increased significantly by sequential infiltration synthesis (SIS). Exposing films to trimethyl-aluminum and water with long dosage times infiltrates the bulk film alumina, which renders them dramatically more resistant plasma etching no degradation patterns. Enhanced etch eliminates need for an intermediate hard mask concomitant costs pattern fidelity losses. Moreover, allowing thinner resist films, this approach can improve final...
Block copolymers with metals confined in one or more blocks are emerging as candidate materials for nanomanufacturing applications due to their unprecedented nanoscale pattern transfer capabilities. In this article we highlight recent developments metal-containing block terms of novel synthetic methodologies particular emphasis on sequential infiltration synthesis, hierarchical self-assembly from nano, meso, and submicron scales, an etch mask high-throughput, high-aspect-ratio nano meso...
Bare Au gated and thioglycolic acid functionalized Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect mercury (II) ions. Fast detection of less than 5s was achieved for sensors. This is the shortest response time ever reported detection. Thioglycolic HEMT based sensors showed 2.5 times larger bare The able ion concentration as low 10−7M. an excellent sensing selectivity more 100 detecting ions over sodium or magnesium dimensions active area sensor entire chip...
This scanning electron microscopy image (∼2 μm wide) depicts high-aspect-ratio features patterned in silicon using sequential infiltration synthesis (SIS) enhancement of photoresist. SIS penetrates the polymeric resist layer with etch-resistant alumina, thereby transforming it into a hard mask. conversion enables use very thin layers, so pattern collapse is virtually eliminated and goals set forth for lithography 2022 can be achieved today. Detailed facts importance to specialist readers are...
There are broad interests in selective and localized synthesis nanodomains of self-assembled block copolymers (BCPs) for a variety applications. Sequential infiltration (SIS) shows promise to selectively grow controllable amount materials one type nanodomain BCP film. However, the effects nanostructured domains film SIS cycles on material growth behavior rarely studied. In this work, we investigated TiO2 within polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films two corresponding...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Yu-Chih Tseng, Qing Peng, Leonidas E. Ocola, David A. Czaplewski, Jeffrey W. Elam, Seth B. Darling; Etch properties of resists modified by sequential infiltration synthesis. J. Vac. Sci. Technol. B 1 November 2011; 29 (6): 06FG01. https://doi.org/10.1116/1.3640758 Download citation file: Ris (Zotero) Reference...
A study involving a large number of carbon nanotube transistors reveals that the diameter and metal contact material play key roles in determining on- off-state currents these devices. The results are discussed terms Schottky barrier at metal−semiconductor junction variation this relative to alignment energy levels between metal.
Sequential infiltration synthesis (SIS) is a process derived from ALD in which polymer infused with inorganic material using sequential, self-limiting exposures to gaseous precursors. SIS can be used lithography harden resists rendering them more robust towards subsequent etching, and this permits deeper higher-resolution patterning of substrates such as silicon. Herein we describe recent investigations model system: Al 2 O 3 trimethyl aluminum (TMA) H within the diblock copolymer,...
Effects of thermal cycling on the microstructure and thermoelectric properties are studied for undoped Na-doped SnSe samples using X-ray computed tomography property measurements. It is observed that causes significant cracks to develop, which decrease both electrical lattice conductivities but do not affect thermopower. The
Antibody-functionalized, Au-gated AlGaN∕GaN high electron mobility transistors (HEMTs) were used to detect botulinum toxin. The antibody was anchored the gate area through immobilized thioglycolic acid. HEMT drain-source current showed a rapid response of less than 5s when target toxin in buffer added antibody-immobilized surface. We could range concentrations from 1to10ng∕ml. These results clearly demonstrate promise field-deployable electronic biological sensors based on HEMTs for detection.
SnTe, a lead-free chalcogenide-based material, shows potential to achieve high thermoelectric performance.