Guests for Conductors Thin films of metal-organic framework (MOF) compounds are generally poor conductors because the linking organic groups usually insulators with little π-orbital conjugation. Talin et al. (p. 66 , published online 5 December) show that infiltrating copper-based MOF HKUST-1 conjugated molecule 7,7,8,8-tetracyanoquinododimethane created an air-stable material conductivities as high 7 siemens per meter.

Abstract In recent years, there has been tremendous progress in the research and development of printable electronics on mechanically flexible substrates based inorganic active components, which provide high performances stable device operations at low cost. this regard, various approaches have developed for direct transfer or printing micro‐ nanoscale, semiconductors substrates. review article, we focus advancements large‐scale integration single crystalline, inorganic‐nanowire (NW) arrays...

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function radius. From characterizations, densities thermally-activated fixed charges trap states surface untreated (i.e., without any functionalization) nanowires are investigated while enabling accurate measurement gate oxide capacitance; therefore, leading direct assessment mobility for electrons. The is...

Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path directly extracted as ∼150 nm. The found to be independent due dominant role surface roughness scattering. was also assessed by a method that combines Fermi's golden rule numerical Schrödinger–Poisson simulation determine scattering potential with theoretical calculations being...

An ultrathin body InAs tunneling field-effect transistor on Si substrate is demonstrated by using an epitaxial layer transfer technique. A postgrowth, zinc surface doping approach used for the formation of a p+ source contact which minimizes lattice damage to compared ion implantation. The exhibits gated negative differential resistance behavior under forward bias, confirming operation device. In this device architecture, ON current dominated vertical band-to-band and thereby less sensitive...

One of the challenges for nanoscale device fabrication III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer approach. From transmission electron microscopy secondary ion mass spectrometry, profile abruptness ∼3.5 nm/decade observed without significant defect density. The n+/p+ junctions fabricated this...

One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter the range 15-35 nm. At low temperatures, stepwise current increases with gate voltage clearly observed and attributed to electron transport through individual 1D sub-bands. The two-fold degeneracy certain sub-band energies predicted by simulation due structural symmetry is experimentally for first time. obtained match simulated results, shedding light on both well number...

Semiconductor nanopillar arrays with radially doped junctions have been widely proposed as an attractive device architecture for cost effective and high efficiency solar cells. A challenge in the fabrication of three-dimensional devices is need highly abrupt conformal along radial axes. Here, a sulfur monolayer doping scheme implemented to achieve ultrashallow sub-10 nm depths electrically active dopant concentration 1019–1020 cm−3 InP nanopillars. The enabled cells exhibit respectable...

Spatially composition-graded CdSxSe1−x (x = 0–1) nanowires are grown and transferred as parallel arrays onto Si/SiO2 substrates by a one-step, directional contact printing process. Upon subsequent device fabrication, an array of tunable-wavelength photodetectors is demonstrated. From the spectral photoconductivity measurements, cutoff wavelength for array, determined bandgap, shown to cover significant portion visible spectrum. The ability transfer collection crystalline semiconductor while...

InAs nanowires have been actively explored as the channel material for high performance transistors owing to their electron mobility and ease of ohmic metal contact formation. The catalytic growth nonepitaxial nanowires, however, has often relied on use Au colloids which is non-CMOS compatible. Here, we demonstrate successful synthesis crystalline with yield tunable diameters by using Ni nanoparticles catalyst amorphous SiO2 substrates. show superb electrical properties field-effect ~2700...

The formation of crystalline NixInAs and NixInAs/InAs/NixInAs heterostructure nanowires by the solid source reaction InAs with Ni is reported for first time. fundamental kinetics Ni/InAs alloying explored, diffusion as rate determining step. diffusivity independent nanowire diameter, an extracted activation energy ∼1 eV/atom. metallic exhibits a modest resistivity ∼167 μΩ·cm diameters >30 nm, increasing diameter further reduced due to enhanced surface scattering. readily enables fabrication...

Gas phase p-doping of InAs nanowires with Zn atoms is demonstrated as an effective route for enabling postgrowth dopant profiling nanostructures. The versatility the approach by fabrication high-performance gated diodes and p-MOSFETs. High concentrations electrically active content ∼1 × 1019 cm−3 are achieved which essential compensating electron-rich surface layers to enable heavily p-doped structures. This work could have important practical implications planar nonplanar devices based on...

Semiconducting single-walled carbon nanotubes (SWCNTs) have great potential for use in electronic and optoelectronic devices. However, methods synthesizing SWCNTs produce a mixture of metallic semiconducting materials, which require additional processing to separate by type. Purification enrichment the fraction is readily achieved using centrifugation aqueous suspensions with help surfactants, but this leaves residual surfactant on SWCNT surface that can impact their optical properties....

Structure matters in solar-to-fuel conversion efficiency, demonstrated for TiO2 coated onto designed three-dimensional (3-D) carbon nanofiber scaffolds. Performance enhancement of up to three times compared flat films can be mostly attributed structurally-enhanced carrier collection and photon management processes. Using 3-D templates balance light absorption depth lead a new class high efficiency cheap energy devices.

The influence of the catalyst materials on electron transport behaviors InAs nanowires (NWs) grown by a conventional vapor technique is investigated. Utilizing NW field-effect transistor (FET) device structure, ∼20% and ∼80% Au-catalyzed NWs exhibit strong weak gate dependence characteristics, respectively. In contrast, ∼98% Ni-catalyzed demonstrate uniform n-type behavior with dependence, resulting in an average OFF current ∼10−10 A high ION/IOFF ratio >104. non-uniform performance mainly...

Electronic and optoelectronic devices based on thin films of carbon nanotubes are currently limited by the presence metallic nanotubes. Here we present a novel approach nanotube alkyl functionalization to physically remove from such network devices. The process relies preferential thermal desorption alkyls semiconducting subsequent dissolution selective removal in chloroform. is versatile applied post-fabrication.

This report describes experimental and analytical methods of resolving frequently encountered problems linearity, accuracy, reproducibility, reliability, concentration polarization in characterization membrane transport coefficients. An apparatus has been constructed for nonsteady‐state transport. employs simultaneous monitoring salt volume each half‐cell, independently, to provide internal checks on accuracy. Sufficient data are generated from a single experiment evaluate complete matrix...

Sub-5 nm ultrashallow junctions in planar and non-planar semiconductors are formed by use of a molecular monolayer doping method conventional spike annealing. ~70% the dopants found to be electrically active, allowing for low sheet resistance given dopant areal dose, minimal junction leakage currents (<1 muA/cm²) observed. This indicates high-quality this method. In addition, temperature-dependent current-voltage (I-V) behavior individual InAs nanowire field-effect transistors is...

The crystallographic structure and magnetic properties of CoCrPt(30 nm)/Cr(50 nm) films fabricated by pulsed laser deposition have been studied at various substrate temperatures ion bombardment energies. Cr(002) texture is developed 350–500° C where increased coercivity observed from the Co-alloy layers, while Cr(110) formed 300° C. average grain size Cr layers gradually increases with temperature ~10 nm to ~20 nm, which comparable that sputtered films. A X-ray peak not grown 400° Ar (> 50...

Co thin films have been electrodeposited on n-type (001) GaAs. The structure and texture of the were investigated using X-ray diffraction transmission electron microscopy (TEM) while magnetic properties examined a vibrating sample magnetometer. Structural evolution was found to be function growth rate. A strong hexagonal close packed (hcp) observed for grown at lower deposition rates. magnetocrystalline anisotropy hcp lattice summed over two in-plane variants resulted in fourfold anisotropic...

Conducting organic polymers are highly attractive electronic materials, having the advantages of low-cost fabrication routes, tunable properties, and mechanical flexibility. Unfortunately, their charge mobility relative to traditional inorganic semiconductors is poor due in part microstructural disorder. A new class synthetically flexible, crystalline materials known as Metal-Organic Frameworks (MOFs) could solve disorder problem, providing within a single material ordered structure...