Yao Guo

ORCID: 0000-0001-7595-2143
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • 2D Materials and Applications
  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Graphene research and applications
  • Advanced Memory and Neural Computing
  • Crystallization and Solubility Studies
  • MXene and MAX Phase Materials
  • Semiconductor materials and devices
  • Carbon Nanotubes in Composites
  • Nanowire Synthesis and Applications
  • Catalytic Processes in Materials Science
  • Ferroelectric and Negative Capacitance Devices
  • X-ray Diffraction in Crystallography
  • Catalysis and Oxidation Reactions
  • Gas Sensing Nanomaterials and Sensors
  • Mechanical and Optical Resonators
  • Advancements in Semiconductor Devices and Circuit Design
  • Perovskite Materials and Applications
  • Bone Tissue Engineering Materials
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Orthopaedic implants and arthroplasty
  • Advanced Sensor and Energy Harvesting Materials
  • Quantum and electron transport phenomena
  • Microbial Community Ecology and Physiology

Chinese Academy of Sciences
2015-2025

Institute of Hydrobiology
2023-2025

Beijing Institute of Technology
2017-2024

Beijing Haidian Hospital
2022-2024

Sun Yat-sen University
2019-2022

Northwestern Polytechnical University
2017-2022

China XD Group (China)
2021

Nanchang University
2016-2020

Tianjin University
2013-2020

Shenyang University of Technology
2020

The field effect transistors (FETs) based on thin layer MoS2 often have large hysteresis and unstable threshold voltage in their transfer curves, mainly due to the charge trapping at oxide-semiconductor interface. In this paper, de-trapping processes SiO2-MoS2 interface are studied. density time constant different temperatures extracted. Making use of trapped charges, metal-oxide-semiconductor FETs is adjusted from 4 V −45 V. Furthermore, impact charges carrier transport evaluated. suggested...

10.1063/1.4914968 article EN Applied Physics Letters 2015-03-09

Monolayer MoS2 prepared by chemical vapor deposition (CVD) has a highly polycrystalline nature largely because of the coalescence misoriented domains, which severely hinders its future applications. Identifying and even controlling orientations individual domains understanding their merging behavior therefore hold fundamental significance. In this work, using single-crystalline sapphire (0001) substrates, we designed CVD growth monolayer triangles aggregates for such purposes. The obtained...

10.1021/nl503373x article EN Nano Letters 2014-11-29

We investigate the hysteresis and gate voltage stress effect in MoS2 field transistors (FETs). observe that both suspended SiO2-supported FETs have large their transfer curves under vacuum which cannot be attributed to traps at interface between SiO2 or substrate gas adsorption/desorption effect. Our findings indicate we comes from itself, revealing an intrinsic origin of besides some extrinsic factors. The fact based on thinner larger than with thicker suggests surface plays a key role...

10.1039/c5nr07336g article EN Nanoscale 2016-01-01

Mechanical exfoliation from bulk layered crystal is widely used for preparing two-dimensional (2D) materials, which involves not only out-of-plane interlayer cleavage but also in-plane fracture. Through a statistical analysis on the exfoliated 2D flakes, we reveal behaviors of six representative including graphene, h-BN, 2H phase MoS2, 1T PtS2, FePS3, and black phosphorus. In addition to well-known cleavage, these materials show distinctive tendency fracture along certain crystallography...

10.1021/acsnano.6b05063 article EN publisher-specific-oa ACS Nano 2016-08-26

Intelligent materials with adaptive response to external stimulation lay foundation integrate functional systems at the material level. Here, experimental observation and numerical simulation, we report a delicate nano-electro-mechanical-opto-system naturally embedded in individual multiwall tungsten disulfide nanotubes, which generates distinct form of in-plane van der Waals sliding ferroelectricity from unique combination superlubricity piezoelectricity. The enables programmable...

10.1038/s41467-022-33118-x article EN cc-by Nature Communications 2022-09-14

Abstract Bioinspired computation systems can achieve artificial intelligence, bypassing fundamental bottlenecks and cost constraints. Computational frameworks suited for temporal/sequential data processing such as recurrent neural networks (RNNs) suffer from problems of high complexity low efficiency. Physical assembled with nanoscale materials devices represent an alternative route to serve the core component physically implanted reservoir computing. In this review, overview development...

10.1002/adfm.202306149 article EN Advanced Functional Materials 2023-08-31

Contact resistance hinders the high performance of electrical devices, especially devices based on two-dimensional (2D) materials, such as graphene and transition metal dichalcogenide. To engineer contact resistance, understanding distribution carrier transport behavior at area is essential. Here, we developed a method that can be used to obtain some key parameters contact, transfer length (Lt), sheet 2D materials beneath contacting (Rsh), resistivity between electrode (ρc). Using our...

10.1021/nn503152r article EN ACS Nano 2014-07-17

Negative photoconductivity is observed in InAs nanowires without a surface defective layer, and induced by gas adsorption the photogating effect.

10.1039/c5cp06139c article EN Physical Chemistry Chemical Physics 2015-11-17

Flexible electronics have enormous potential for applications that are not achievable in standard electronics. In particular, important technological advances been made terms of their performance characteristics and range applications, ranging from medical care, packaging, lighting signage, consumer electronics, alternative energy. this study, we develop a novel method fabricating flexible conductive carbon nanotube (CNT) films on various substrates. The fabricated CNT exhibited satisfactory...

10.3390/nano13111749 article EN cc-by Nanomaterials 2023-05-26

The edges of layered materials have unique properties that substantially differ from the body regions. In this work, we perform a systematic Raman study various (MoS2, WS2, WSe2, PtS2, and black phosphorus). spectra feature newly observed forbidden modes, which are originally undetectable region. By selecting edge type polarization directions incident scattered light, all modes distinctly detected. Optical simulations show drastically distort electromagnetic fields both so light interacts...

10.1126/sciadv.aau6252 article EN cc-by-nc Science Advances 2018-12-07

The Yangtze River constitutes a crucial aquatic system in China, and lakes downstream play significant role the stability of ecosystem functions. However, human activities have caused to suffer from eutrophication. Moreover, it is important investigate ecosystems Qingting Lake, Fengming Yin Lake Wuhu City, Anhui Province, for tracing controlling We focused on differences communities their relationships with environmental variables. A total 61 species zooplankton, 69 phytoplankton, 15 benthos...

10.13227/j.hjkx.202401186 article EN PubMed 2025-02-08

The electrical properties of WS2 nanotubes (NTs) were studied through measuring 59 devices. Important parameters, such as the carrier concentration, mobility, and effective barrier height at contacts, obtained fitting experimental non-linear I-V curves using a metal-semiconductor-metal model. mobility was found to be several orders magnitude higher than that have been reported previously for NTs. Water absorption decrease conductivity NTs, could removed when sample dried. Oxygen also...

10.1063/1.4752440 article EN Applied Physics Letters 2012-09-10

Near-infrared (NIR) emitting persistent phosphors of Cr3+-doped zinc gallogermanate have emerged for in vivo bioimaging with the advantage no need situ excitation. However, it is challenging to synthesize well-dispersed and uniform spherical particles high brightness, resolution, distinguished NIR long afterglow. In this work, Zn3Ga2Ge2O10:Cr3+ (ZGGC) monospheres were directly synthesized by a facile hydrothermal method assistance citric anions (Cit3-), which emit an emission at ∼696 nm...

10.1021/acsabm.8b00734 article EN ACS Applied Bio Materials 2018-12-28

InGaN/GaN visible-light p–i–n photodiodes with a p-down structure were fabricated using polarization-doped p-type layer realized by depositing linearly graded AlGaN. The exhibited high responsivity, speed and bandpass response.

10.1039/d1tc01193f article EN Journal of Materials Chemistry C 2021-01-01

Molecular chirality transfer and amplification is at the heart of fundamental understanding chiral origin fabrication artificial materials. We investigate here nonlinear effect in from small molecules to assembled plasmonic nanoparticles. Our results show clearly a recognizable behavior electronic circular dichroism activities, demonstrating validity "majority-rules" principle operating both three-dimensional interface-confined molecularly environment Such twin effects self-assembled...

10.1021/acsnano.1c01158 article EN ACS Nano 2021-03-04

Nanotube and nanowire transistors hold great promises for future electronic optoelectronic devices owing to their downscaling possibilities. In this work, a single multi-walled tungsten disulfide (WS

10.1002/smll.202403965 article EN cc-by Small 2024-07-12

We report a new design of carbon nanotube (CNT) resonator, whose resonance frequency can be tuned not only transversally by gate voltage, but also the axial strain applied through directly pulling CNT. The resonators are fabricated from individual suspended single-walled CNT (SWCNT) in situ inside scanning electron microscope. SWCNT resonator more than 20 times with an increase quality factor when is increased nearly zero to 2% at room temperature. transversal gate-tuning ability found...

10.1021/nl4040913 article EN Nano Letters 2014-02-14

With the scaling down of field effect transistors (FETs) to improve performance, contact between electrodes and channel becomes more important. Contact properties FETs based on ultrathin InAs NWs (with diameter ranging from sub-7 nm 16 nm) are investigated here. Chromium (Cr) nickel (Ni) proven form ohmic with NWs, in contrast a recent report (Razavieh A et al ACS Nano 8 6281). Furthermore, resistance is found depend NW metals, which Cr increases rapidly than that Ni when decreases. The...

10.1088/0957-4484/26/17/175202 article EN Nanotechnology 2015-04-09
Coming Soon ...