A5004456284- Nanowire Synthesis and Applications
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Electronic and Structural Properties of Oxides
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Topological Materials and Phenomena
- Advanced Semiconductor Detectors and Materials
- 2D Materials and Applications
- Semiconductor materials and devices
- Physics of Superconductivity and Magnetism
- Magnetic properties of thin films
- ZnO doping and properties
- Semiconductor Lasers and Optical Devices
- Quantum Dots Synthesis And Properties
- Advanced Photonic Communication Systems
- Graphene research and applications
- Optical Network Technologies
- Silicon Nanostructures and Photoluminescence
- Catalytic C–H Functionalization Methods
- Quantum Information and Cryptography
- Cyclopropane Reaction Mechanisms
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- Synthesis and Catalytic Reactions
Institute of Semiconductors
2015-2024
Chinese Academy of Sciences
2015-2024
University of Chinese Academy of Sciences
2015-2024
Beijing Academy of Quantum Information Sciences
2020-2024
Kaifeng University
2023
Institute of Modern Physics
2013-2022
Wenzhou Medical University
2021-2022
Affiliated Hospital of Youjiang Medical University for Nationalities
2021
Duke Medical Center
2021
Center for Excellence in Molecular Cell Science
2019
We analyze the optical gain of tensile-strained, n-type Ge material for Si-compatible laser applications. The band structure unstrained exhibits indirect conduction valleys (L) lower than direct valley (Gamma) by 136 meV. Adequate strain and doping engineering can effectively provide population inversion in bandgap Ge. tensile decreases difference between L Gamma valley, while extrinsic electrons from fill to level compensate remaining energy difference. Our modeling shows that with a...
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays in a fully controllable way and is thus of great interest both basic science device applications. Here, an overview this promising technique presented, focusing on the growth fundamentals, formation nanowire arrays, monolithic integration silicon, heterostructures, networks various shapes. The applications these photonics, electronics, optoelectronics, quantum are also reviewed. Finally, current...
Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric ferromagnetic orders. The effective manipulation intrinsic anisotropy makes it promising control multiple degrees the storage "medium". Here, we discovered intriguing in-plane electrical magnetic anisotropies van der Waals (vdW) multiferroic CuCrP2S6. uniaxial current rectifications, properties magnon...
We report the device performance of normal-incidence (In, Ga)As/GaAs quantum dot intersubband infrared photodetectors. A primary transition peak is observed at wavelength 13 μm (E0→E1) and a secondary 11 (E0→E2). The measured energy spacing in conduction band dots good agreement with low temperature photoluminescence measurement calculations. detectivity 1×1010 cm Hz1/2/W was achieved 40 K for these devices.
We demonstrate a high-performance, tensile-strained Ge p-i-n photodetector on Si platform with an extended detection spectrum of 650–1605 nm and 3 dB bandwidth 8.5 GHz measured at λ=1040nm. The full the is achieved low reverse bias 1 V, compatible driving voltage requirements ultralarge-scale integrated circuits. Due to direct bandgap shrinkage induced by 0.20% tensile strain in layer, device covers entire C band large part L telecommunications. responsivities 850, 980, 1310, 1550, 1605 are...
Here we report the growth of phase-pure InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag catalysts. A conventional one-step catalyst annealing process is found to give rise with diameters ranging from 4.5 81 nm due varying sizes droplets, which reveal strong diameter dependence crystal structure. In contrast, a novel two-step procedure yields vertical highly uniform ∼10 in diameter. Significantly, these ultrathin exhibit perfect wurtzite structure, free stacking...
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using four-terminal design. Compared to previous works, thinner InAs (diameter less than 40 nm) is expected reach fewer sub-band regime. The design excludes electrode contact resistance, an unknown value which has inevitably affected previously reported conductance. Using tunneling spectroscopy, we find large zero-bias peaks (ZBPs) in differential conductance on the order $2e^2/h$....
Probing an isolated Majorana zero mode is predicted to reveal a tunneling conductance quantized at $2e^2/h$ temperature. Experimentally, zero-bias peak (ZBP) expected and its height should remain robust against relevant parameter tuning, forming plateau. Here, we report the observation of large ZBPs in thin InAs-Al hybrid nanowire device. The ZBP can stick close $2e^2/h$, mostly within $5\%$ tolerance, by sweeping gate voltages magnetic field. We further map out phase diagram identify two...
Quantum secure direct communication (QSDC) leverages quantum states to transmit information securely and reliably over a noisy, lossy, wiretapped channel. It has been proven be information-theoretically secure. Recent experiments show that QSDC can enable long-distance large-scale networking with existing technologies. In particular, free-space the unique advantages prospects for practical application. Here, we review basics progress of QSDC. The feasibility satellite-based future directions...
Physical reservoirs holding intrinsic nonlinearity, high dimensionality, and memory effects have attracted considerable interest regarding solving complex tasks efficiently. Particularly, spintronic strain-mediated electronic physical are appealing due to their speed, multi-parameter fusion low power consumption. Here, we experimentally realize a skyrmion-enhanced reservoir in multiferroic heterostructure of Pt/Co/Gd multilayers on (001)-oriented 0.7PbMg
We present a design of monolithically integrated GeSi electroabsorption modulators and photodetectors for electronic-photonic circuits on silicon-on-insulator (SOI) platform. The modulator is based the Franz-Keldysh effect, composition chosen optimal performance around 1550 nm. designed device butt-coupled to Si(core)/SiO(2)(cladding) high index contrast waveguides, has predicted 3 dB bandwidth >50 GHz an extinction ratio 10 dB. same structure can also be used waveguide-coupled photodetector...
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered materials are highly desired for searching and manipulation Majorana Fermions solid state, a fundamental research task physics today, development novel high-speed nanoelectronic infrared optoelectronic devices. Here, we report on new route toward growth single-crystalline, materials. We demonstrate the successful free-standing, two-dimensional nanosheets one-dimensional InAs nanowires...
Negative photoconductivity is observed in InAs nanowires without a surface defective layer, and induced by gas adsorption the photogating effect.
Choline chloride–ZnCl<sub>2</sub> deep-eutectic solvent (ChCl–ZnCl<sub>2</sub> DES), mole ratio 1 : 2, was used to improve the chemical reactivity of wheat straw alkali lignin under different temperatures and times pretreatment.
Abstract Indium antimony is a direct, narrow bandgap III–V semiconductor with ultrahigh carrier mobility and an attractive optoelectronic device candidate for use in the visible to infrared region. Here, (IR) photodetector based on high‐quality InSb nanosheets (NSs) presented, which shows clear photoresponse over broad spectral range from (637 nm) (4.3 µm). Due high surface‐to‐volume ratio of nanostructured materials, defects sample surface can affect performance, disadvantage ambipolar...
Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in quest for Majorana zero modes (MZMs). However, InAs often exhibit a high density randomly distributed twin defects stacking faults, which result an uncontrolled non-uniform interface. Furthermore, this type disorder can create potential inhomogeneity wire, destroy topological gap, form trivial sub-gap states mimicking MZM transport...
Semiconductor quantum-dot nanostructures are interesting objects for fundamental as well practical reasons. Fundamentally, they can form the basis of systems in which to study quantum mechanics electrons confined zero-dimensional (0-D) space. In practice, dots be embedded active regions a new class electronic and optoelectronic devices with novel functionalities. This paper reviews state-of-the-art use these infrared detectors. It describes progress, challenges, projections continued...
The piezoelectric and piezoresistive effects of InAs nanowires are experimentally demonstrated for the first time observed to strongly depend on NW crystal structure. While single-crystalline 〈0001〉 oriented wurtzite nanowires exhibit remarkable effects, they negligible in , zinc blende 〈011〉, 〈103〉, nanowires, significantly suppressed by presence stacking faults. As a service our authors readers, this journal provides supporting information supplied authors. Such materials peer reviewed...
Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on avalanche photodiodes (Ge/Si APDs) have attracted tremendous attention due to their properties high performance and low cost. The sensitivity 10Gb/s APD reached -29.5dBm at 1550 nm with bit error rate 1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup> in 2015, 25 Gb/s...
We report a waveguide Ge/Si APD with ultra-high 3dB-bandwidths: 56GHz 1310nm responsivity of 1.08A/W and 36GHz 6A/W, which, to our knowledge, are the best performance among all reported devices.
Abstract Background Nonalcoholic fatty liver disease (NAFLD) can lead to chronic diseases associated with mitochondrial damages. However, the exact mechanisms involved in etiology of are not clear. Methods To gain new insights, changes affecting sirtuin 1 (SIRT-1) during fat accumulation was investigated a NAFLD mouse model. In addition, vitro research regulation operated by SIRT-1 on structures, biogenesis, functions, and autophagy. Results mice NAFLD, high-fat-diet (HFD) increased body...
Low-dimensional narrow-band-gap III–V semiconductors have great potential in high-performance electronics, photonics, and quantum devices. However, nanoscale infrared photodetectors based on isolated two-dimensional (2D) compound are still rare. In this work, we demonstrate a new type of photodetector the InAs nanosheet. The has high optoelectronic response ultraviolet-infrared band (325–2100 nm) at room temperature. very responsivity (∼1231 A/W), EQE (2.2 × 105 %), detectivity (5.46 1010...