A5089881092- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Radio Frequency Integrated Circuit Design
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Photocathodes and Microchannel Plates
- Metal and Thin Film Mechanics
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Acoustic Wave Resonator Technologies
National Yang Ming Chiao Tung University
2012-2023
Taiwan Semiconductor Manufacturing Company (United States)
2014
A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The (FE) polarization increases the number of trapped charges in HfON trapping layer, leading to high positive threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) shift device. Besides, under bias temperature instability (PBTI) test,...
A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions negative charges were lightly into both the and partially recessed barrier layer, resulting in positive threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V} _{\mathrm{ th}}$ </tex-math></inline-formula>...
CMOS-compatible 100/650 V enhancement-mode FETs and 650 depletion-mode MISFETs are fabricated on 6-inch AlGaN/GaN-on-Si wafers. They show high breakdown voltage low specific on-resistance with good wafer uniformity. The importance of epitaxial quality is figured out in a key industrial item: high-temperature-reverse-bias-stress-induced on-state drain curent degradation. Optimization layers shows significant improvement device reliability.
A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported for the first time. The optimized FEG-HEMT implements a novel SCFP structure, which creates cascode-like configuration D-mode MISHEMT. This has positive V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> of 2.81 V, high I xmlns:xlink="http://www.w3.org/1999/xlink">D,max</sub>...
A GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, device has 2-D gas (2-DEG) channel exposed on nanowire sidewalls, so that trapped charges in HfON trapping layer can easily deplete from leading to a positive threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
In this work, a recess-free thin AlGaN barrier metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) with threshold voltage of 3.19V, maximum drain current 716 mA/mm and breakdown 906V is demonstrated for the first time. Three different structures were compared device performance. addition, long-term reliability measurements carried out to investigate interface quality devices without gate recess. The exhibits smaller V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
High-performance GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) using Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate dielectric deposited by atomic layer deposition (ALD) and damage-free neutral beam etch (NBE) recess process for millimeter-wave power applications are demonstrated. The high-quality ALD reduces the leakage current of device NBE...
E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power device applications. The FEG-HEMT demonstrates a combination of polarization and trapping process in the ferro-charge-storage stack, leading to positive threshold voltage shift operations. In this work, FEG-HEMTs with various Hf-based Zr-based layers are systematically studied. which employed nitrogen incorporated HfO2 (HfON) as layer shows an operation highest Vth (+2.3 V)...
This letter reports an E-mode GaN MIS-HEMT using a composite La <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /HfO gate insulator for power device applications. The dielectric formed amorphous LaHfOx layer after post-deposition annealing. with showed good oxide film quality and excellent HfLaOx/GaN interface properties, as demonstrated by the measured C-V characteristics....
The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. NBE could eliminate plasma-induced defects generated by irradiating ultraviolet/VUV photons in conventional inductively coupled plasma reactive ion method. HEMT device new gate recess process exhibited superior performances, including a maximum drain current density (I <sub...
We demonstrate the electrical performances of quaternary InAlGaN/GaN MIS-HEMTs with high quality SiNx gate dielectric and surface passivation layer deposited by low pressure chemical vapor deposition (LPCVD) at 780 °C. Excellent LPCVD-SiNx/InAlGaN interface film were obtained, resulting in very output current density, a small threshold voltage hysteresis steep subthreshold slope. The LPCVD-SiNx/InAlGaN/GaN MIS-HEMT device exhibited on/off ratio, large swing, breakdown voltage, dynamic...
We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors (MIS-HEMTs) with high quality Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gate dielectric deposited by plasma enhanced atomic layer deposition using both H and remote as oxygen sources. Excellent gate-dielectric/GaN interface film were obtained, resulting in a...
Abstract Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La 2 O 3 /SiO AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) with other -based (La /HfO , /CeO and single ) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve dielectric quality but also characteristics. The improved gate insulation, reliability, linearity of 8 nm MOS-HEMT were demonstrated.
In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$W_{\mathrm{ fin}}$ </tex-math></inline-formula> down to 20 nm, EOT of 2.1 and notation="LaTeX">$L_{G} = 60$ nm shows high notation="LaTeX">$I_{\mathrm{ ON}} 188~\mu \text{A}/\mu \text{m}$ at notation="LaTeX">$V_{DD} 0.5$ V OFF}} 100$ nA/...
Aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure devices have proven to be highly effective for high‐frequency power amplifiers and switching applications with improved performance compared those made traditional silicon technology other advanced semiconductor technologies. The development of enhancement‐mode (E‐mode) AlGaN/GaN high electron mobility transistors (HEMTs) metal–insulator–semiconductor HEMTs (MIS‐HEMTs) has been a focus in recent years due their potential...
2.2-µm-thick crack-free GaN films were grown on patterned Si substrates. The obtained by patterning substrate and optimizing the graded Al x Ga 1- N layers. With increase of layer thickness, crystal quality improved as judged from X-ray diffraction data. By applying multi-Al layers substrate, a 31% reduction tensile stress for film was measured micro-Raman. For AlGaN/GaN high electron mobility transistor 1×1 cm 2 larger patterns, device exhibits maximum drain current density 776 mA/mm...
Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various insulator materials including SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , HfO La O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /SiO and were investigated MIS-HEMT application. It is found that with composite oxide results in better device performance reliability as compared other materials.
In this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /InGaAs gate stack. Transistors lengths down to 80 nm have been fabricated characterized. Due excellent quality HfO /AlN/InGaAs, subthreshold swing peak...
2.2-µm-thick crack-free GaN films were grown on patterned Si substrates. The obtained by patterning substrate and optimizing the graded AlxGa1-xN layers. With increase of layer thickness, crystal quality improved as judged from X-ray diffraction data. By applying multi-AlxGa1-xN layers substrate, a 31% reduction tensile stress for film was measured micro-Raman. For AlGaN/GaN high electron mobility transistor 1×1 cm2 larger patterns, device exhibits maximum drain current density 776 mA/mm...
Enhancement-mode (E-mode) AlGaN/GaN HEMTs with large gate swing and high threshold voltage is demonstrated in this work. The E-mode GaN were fabricated by low energy fluorine ion implantation technique. Low can provide higher concentration the AlGaN layer modulate distribution layer. be also calculated SRIM simulation. (The Stopping Range of Ions Matter) Without using insulator, enhancement-mode HEMT shows 2.5 V, a current density 200 mA/mm at bias 5.5 V. To confirm damages removed, thermal...
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) is a promising candidate for power applications. For simplify circuits design and fail-safe operation, enhancement-modes (E-mode) operation indispensable GaN application. From now on, several method has been demonstrated to fabricate E-mode HEMTs, such as recessed-gate [1], p-type [2], fluorine plasma implantation [3]. Mostly group report the results of by using RIE, ECR system [3-4]. However, those systems cannot avoid...
Hybrid FEG-HEMTs The high-performance hybrid ferroelectric charge storage gate (FEG) GaN HEMT has gradually gained attention due to the concept being a useful tool realize E-mode operations. In article number 2300018, NYCU group in Taiwan led by Edward Yi Chang shown that implementing an additional layer on top of demonstrates exceptional electrical characteristics and shows great potential for future power switching applications.