A5001795469- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Graphene research and applications
- Advanced Sensor and Energy Harvesting Materials
- Advancements in Semiconductor Devices and Circuit Design
- Carbon Nanotubes in Composites
- Analytical Chemistry and Sensors
- Semiconductor materials and interfaces
- Advanced biosensing and bioanalysis techniques
- Transition Metal Oxide Nanomaterials
- Silicon Nanostructures and Photoluminescence
- Conducting polymers and applications
- Acoustic Wave Resonator Technologies
- Copper-based nanomaterials and applications
- Ion-surface interactions and analysis
- Thin-Film Transistor Technologies
- MXene and MAX Phase Materials
- Semiconductor Quantum Structures and Devices
- Electrochemical sensors and biosensors
- Quantum Dots Synthesis And Properties
- Advanced Memory and Neural Computing
National University of Malaysia
2015-2024
National Yang Ming Chiao Tung University
2012-2024
National Institutes of Biotechnology Malaysia
2012-2023
IMEC
2022
KU Leuven
2022
Abdus Salam Centre for Physics
2020
iThemba Laboratory
2020
Institute of Microelectronics
2010-2016
University of Malaya
2002
Highly arranged porous anodic titania (TiO 2 ) nanotube arrays (ATNT) were fruitfully fabricated by the anodization of Ti foil in an ammonium fluoride electrolyte.
High aspect ratio solid silicon microneedles with a concave conic shape were fabricated. Hydrofluoric acid–nitric acid–acetic acid (HNA) etching parameters characterized and optimized to produce that have long narrow bodies smooth surfaces, suitable for transdermal drug delivery applications. The by varying the HNA composition, optical mask's window size, temperature bath agitation. An L9 orthogonal Taguchi experiment three factors, each having levels, was utilized determine optimal...
Due to intensive integration and seamless continuous operation, the overheated artificially intelligent (AI) integrated circuit systems will affect operation system's effectiveness, stability, lifetime. Therefore, we proposed a temperature adaptability memristor in silver nanowires (AgNWs)/nanocomposite/indium–tin-oxide structure this study. The nanocomposite is nitrogen-doped graphene/Ti3CNTx MXene blend polyvinylidene fluoride matrix. device has been prepared by using heterostructure...
The demand for self-powered wearables is surging, as consumers seek convenience and portability. Energy-harvesting technologies, especially piezoelectric nanogenerators (PENGs), which convert mechanical energy to electrical energy, hold promise harvesting human motion energy. Hence, ongoing research aims enhance the output power efficiency integrate with flexible materials. This involves material innovation boost PENG performance, optimizing structure flexibility, improving manufacturing...
Abstract In this study, the implementation of Cu-based materialization in GaN high electron mobility transistor (HEMT) was investigated. The TiN proposed Ti/TiN/Cu Ohmic metal stack mitigated diffusion Cu and alloy formation at interface, resulting higher stability. specific contact resistance (ρc) found to be 6.68×10−6 Ω-cm², comparable that Au-based counterparts other published articles. Additionally, HEMTs, fabricated with TiN/Cu gate metals, showed superior electrical properties (IDS:...
A new 2D titanium carbide (Ti3C2), a low dimensional material of the MXene family has attracted remarkable interest in several electronic applications, but its unique structure and novel properties are still less explored piezoelectric energy harvesters. Herein, systematic study been conducted to examine role Ti3C2 multilayers when it is incorporated polymer host. The 0.03 g/L identified as most appropriate concentration ensure optimum performance fabricated device with generated output...
In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the power performance of Ka-band devices, and a film thinning process is adopted in fabrication reduce parasitic capacitance caused by thick silicon nitride film. According S-parameter measurement results, devices owning structure undergoing have higher cut-off frequency (fT) maximum oscillation (fmax) values lower extracted capacitance. For load-pull result, HEMT tall gate stem has improved output...
A GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) using tri-gate architecture and hybrid ferroelectric charge trap gate stack is demonstrated for normally-off operation. Compared with the conventional planar device, device has 2-D gas (2-DEG) channel exposed on nanowire sidewalls, so that trapped charges in HfON trapping layer can easily deplete from leading to a positive threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
A novel way to describe the complexity of biological and engineering approaches depending on number different base materials is proposed: Either many are used (material dominates) or few (form just one material (structure dominates). The approach (in biology as well in engineering) increases with decreasing materials. Biomimetics, i.e., technology transfer from engineering, especially promising MEMS development because constraints both fields. Biomimicry Innovation Method applied here for...
Porous and single-crystal Zn-doped TiO<sub>2</sub>nanowall with (001) lattice-plane can be grown on indium tin oxide substrate using a liquid-phase deposition method. The present structure promises potential uses in solar cells photocatalysis.
The optical properties of heavy metal-free quaternary CuZnInS<sub>3</sub> QDs can be optimized by tuning the composition, which is promising for improving efficiency QDs-PEC hydrogen generation.
2D SnGe 2 N 4 as an appealing photocatalyst driving Oxygen Evolution Reaction (OER).