A5080533109- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- ZnO doping and properties
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Advanced Sensor and Energy Harvesting Materials
- Nanowire Synthesis and Applications
- Transition Metal Oxide Nanomaterials
- Photonic and Optical Devices
- Photorefractive and Nonlinear Optics
- Conducting polymers and applications
- Tactile and Sensory Interactions
- Advanced Memory and Neural Computing
- Advanced Optical Imaging Technologies
Korea Advanced Institute of Science and Technology
2017-2023
Vertical thin-film transistors (TFTs) with low contact resistance are necessary to realize high-resolution displays for virtual reality and augmented applications.
This letter presents a thin-film transistor architecture, in which "trench" is introduced between the source and drain electrode to enhance current flow. The top-gate top-contact oxide Trench has superior on-current per width of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$27.7~\mu \text{A}/ \mu \text{m}$ </tex-math></inline-formula> at voltage 4.1 V. It also good subthreshold swing 0.122 V/dec turn-on...
We investigated the effect of back channel material which plays as a defining layer in vertical TFT for application to ultra‐high resolution display. Although IGZO with polyimide has low mobility, it shows good on/off ratio higher than 10 7 , gate leakage current, and hard saturation behavior length 1 um.
Gate insulator (GI) materials in top gate structured InGaZnO thin‐film transistor (TFT) with copper electrode are examined for the application to large area display. To overcome problems hydrogen diffusion, which can influence number of carriers oxide semiconductor and gain trans‐conductance coefficient, a double‐layered GI 30 nm Al 2 O 3 /120 SiN x is adopted. The TFT showed field‐effect mobility, V on , SS hysteresis 12.8 cm −1 s −0.7 V, 0.17 decade almost 0 respectively, ΔVon under...
Abstract Reports have recently been published on ultrathin biofluid barriers, which enable the long‐term measurement of biological signals and exhibit conformability nonlinear surfaces such as skin organs. However, inorganic‐ organic‐based barriers process incompatibility high water permeability, respectively. Siloxane‐ (inorganic) based fluorinated epoxy (organic) hybrid materials (FEH) are demonstrated for bio‐fluidic barrier biocompatibility performance flexible electronic systems...
Holographic display is known as the most realistic 3D by creating real image in front of observer. But there are tremendous technical hurdles realizing electronic hologram. It required to achieve very small pixel pitch SLM (spatial light modulator) for hologram using flat panel display. All components unit should be carefully redesigned and improved maintaining same performance spite reduction pitch. The size depends on SLM. Therefore, resolution increases fast driver chip architecture...
Proceedings of the International Display Workshops Volume 26 (IDW '19),Contact Properties between Low-Resistive Al-Based Source/Drain and InO<sub>x </sub>in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to Vertical-TFT
Proceedings of the International Display Workshops Volume 26 (IDW '19),Contact Properties between Low-Resistive Al-Based Source/Drain and InO<sub>x </sub>in Top-Gate Bottom-Contact Oxide Thin-Film Transistor for Application to Vertical-TFT
Solution-processed and photo-patternable fluorinated sol-gel hybrid materials are demonstrated as a bio-fluidic barrier for flexible electronic systems by Wonryung Lee, Byeong-Soo Bae, co-workers in article number 1901065. Ultra-thin solution-processed metal oxide transistors with these 1-µm-thick films exhibit good performance after 16 hours environment no degradation of electrical properties 1000 cycles mechanical testing.