Technical Briefs The “Heatline” Visualization of Convective Heat Transfer S. Kimura, Kimura Department Mechanical Engineering, University Colorado, Boulder, Colo. 80309 Search for other works by this author on: This Site PubMed Google Scholar A. Bejan Author and Article Information J. Transfer. Nov 1983, 105(4): 916-919 (4 pages) https://doi.org/10.1115/1.3245684 Published Online: November 1, 1983 history Received: December 13, 1982 October 20, 2009

Psychological maladjustment and its relation to academic achievement, parental expectations, satisfaction were studied in a cross-national sample of 1,386 American, 1,633 Chinese, 1,247 Japanese eleventh-grade students. 5 indices included measures stress, depressed mood, anxiety, aggression, somatic complaints. Asian students reported higher levels expectation lower concerning achievement than their American peers. Nevertheless, less fewer complaints did Chinese aggressive feelings...

We demonstrate a new MOSFET on ultra-thin BOX that allows wide-range back-bias control in low-power and high-performance applications. The back gate is effective not only to increase the drive current by about 20% active mode but also reduce off-current an order of magnitude stand-by mode. have demonstrated tunable-threshold-voltage technology for devices with metal gates ion implantation V/sub th/ control. target applications was achieved using propose 6-transistor SRAM memory cell which we...

To ensure the required capacitance for low-power DRAMs (dynamic RAMs) beyond 4 Mb, three kinds of capacitor structures are proposed: (a) poly-Si/SiO/sub 2//Ta/sub 2/O/sub 5//SiO/sub 2//poly-Si or poly-Si/Si/sub 3/N/sub 4//Ta/sub (SIS), (b) W/Ta/sub (MIS), and (c) 5/W (MIM). The investigation time-dependent dielectric breakdown leakage current characteristics indicates that dielectrics have equivalent SiO/sub 2/ thicknesses 5, 4, 3 nm can be applied to 3.3-V operated 16-Mb having stacked...

We have developed the new "Yin-Yang" feedback technology for SRAM cells. This is applied to six-transistor cells and four-transistor cells, which are composed of transistors with D2G-SOI structure. At 65-nm process node, these can operate at 0.7 V in mass-produced LSIs under real usage conditions. Max operating speeds 300 MHz 200 cell. Leakage current cell about 1/1000 that a conventional These provide menu allows us optimally balance requirements various types low-power LSIs.

A ldquosilicon on thin BOXrdquo (SOTB) CMOS with a 50-nm single metal (FUSI) gate has been developed. By employing an intrinsic channel and gate, this SOTB achieves the smallest V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> variability ever reported. The measured Pelgrom coefficients of were 1.8 1.5 for NMOS PMOS, respectively, even in case relatively thick EOT 1.9 nm. Both multi-V control as well suppression short-channel effects...

A kind of data-line (DL) interference noise in a scaled DRAM cell array is found and studied through analysis. The dynamic behavior arrays due to sense-amplifier operation derived analytically. Analysis shows that the amount more than three times larger expected from simple coupling. novel experimental technique for precise determination developed verify Analytical results are good agreement with data. It plays dominant role determining operating margin process or architecture minimizing...

This paper describes the limitations and challenges involved in designing gigabit DRAM chips terms of high-density devices, high-performance circuits, low-power/low-voltage circuits. The key results obtained are as follows. 1) For formation a MOSFET shallow junction, which suppresses threshold voltage (V/sub T/) variation offset sense amplifiers, reduction ion-implantation energy process temperature is essential. Also, keys area, speed, stable cell operation, ease fabrication use...

We describe a distributed baseband amplifier using new loss compensation technique for the drain artificial line. The circuit improves high-frequency performance of and makes gain bandwidth product larger than that conventional ones. also use dc matching terminations dumping resistors gate lines to obtain flat from frequencies as low 0 Hz. One IC fabricated 0.1 /spl mu/m-gatelength InAlAs/InGaAs/InP HEMTs has 16 dB over 0-to-50 GHz band, resulting in about 300 GHz. Another 10 0-to-90 band....

The negative bias temperature instability (NBTI) of pMOSFETs with ultra-thin gate dielectrics was investigated from four points view: basic mechanism NBTI, dependence NBTI on dielectric thickness, enhancement caused by addition nitrogen to the dielectrics, and possibility applying SiON a high concentration nitrogen. By investigating behavior FET characteristics after NBT stresses were stopped, it clarified that portion (60%, in our case) hydrogen atoms released stress remains case...

Chemical-mechanical-polishing (CMP) was used to smooth the surface of a SiGe substrate, on which strained-Si n- and p-MOSFETs were fabricated. By applying CMP after growing buffer layer, roughness considerably reduced, namely, 0.4 nm (rms). A layer then successfully grown CMP-treated substrate. The fabricated MOSFETs showed good turn-off characteristics, (i.e., equivalent those Si control devices). Moreover, capacitance-voltage (CV) measurements revealed that quality gate oxide devices same...

The burst-mode 3R receiver using monolithic ICs for 10-Gbit/s-class optical access networks is reported. In a point-to-multipoint system like passive network (PON), the at line terminal (OLT) must be able to handle packets with significantly different powers and phases. An OLT high sensitivity instantaneous response burst inputs desired widening accommodation area efficiency in PON uplinks. Currently, diffusion of high-speed Internet connection services represented by fiber home 1.25 Gbit/s...

MOSFETs in the sub-0.1- mu m regime were investigated using a nonplanar device simulator CADDETH-NP. It was found that even this regime, short-channel effect can be suppressed grooved gate because of concave corner insulator. with length 0.05 or less no threshold voltage lowering made by optimizing radius, junction depths, and channel doping.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

We propose a λ-selective burst-mode transceiver with 100-ns wavelength switching for the use in C and L-bands upstream downstream signals, respectively. The bidirectional 40-km transmission of symmetric 40-Gbit/s λ-tunable WDM/TDM-PON is demonstrated without PON repeater.

We propose an automatic load-balancing DWBA algorithm for λ-tunable WDM/TDM-PONs. The is widely applicable despite the use of long-time tuning devices. have confirmed with simulations that proposed properly activates λ-tuning when needed although period much longer than DBA cycle.

A tantalum–pentoxide dielectric with an enhanced permittivity of over 50 was found to be crystallized in a hexagonal symmetry a=0.628 nm and c=0.389 nm. The incommensurate epitaxy tantalum pentoxide on hcp-ruthenium metal stabilizes the phase √3-time periodicity plane, as compared that known δ phase. crystallographic assumption, which is based one-dimensional Ta–O–Ta chain along c axis, can explain large polarizability caused by delocalized electrons chain.

An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The has gain of 10 dB with 0–90 GHz bandwidth. This widest bandwidth among all reported ICs to date.

This paper proposes a new single-fiber 10-Gb/s optical loopback method for wavelength-division-multiplexing (WDM) access networks. The proposed improves the tolerance of backreflection that causes interferometric crosstalk with on single fiber. Furthermore, bit synchronization is used to avoid problem wavelength dispersion caused in authors simulated available distance, received eye patterns at 10 Gb/s, and confirmed excellent opening. back-to-back experiments show provides 17-dB improvement...

This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The has gain of 16 dB with DC-to-47-GHz bandwidth. Gain BandWidth Product (GBWF) is about 300 GHz, which highest among all reported single-stage ICs. It also flat from DC and operates as without any off-chip components.

Circuit techniques for 1.5-V CMOS DRAMS to be used in battery-based applications are presented. A three-level word pulse and a plate maintain the stored voltage memory cell, spite of minimized data-line swing reducing power dissipation. 3.4- mu m/sup 2/ shielded stacked capacitor (STC) cell is also proposed enhance signal-to-noise ratio (SNR) array. The read/write operation observed successfully through 2-kbit test device. data-holding time alpha -particle-induced soft error rate device...

An ac-coupled burst-mode receiver (B-Rx) for 10-Gbit/s class PON systems that uses a novel baseline-wander common-mode-rejection (BLW-CMR) technique and an inverted distortion is proposed demonstrated. The realization of requires the development B-Rx with high sensitivity, wide dynamic range, fast response handling data. BLW-CMR can cancel out transient responses capacitors at interface, reduce duty-cycle caused by reference voltage wandering long consecutive identical digits (CIDs) average...

We propose a flexible multiplexing system that assigns bit of symbol in multi-level modulation and time slot dynamically PON. And we demonstrated successfully simultaneous downstream scheme for the proposed ONU GE-PON/10G-EPON ONU.

This paper describes the device, circuit design, and packaging technologies applicable to 40-Gb/s-class future lightwave communications systems. A 0.1-/spl mu/m gate InAlAs-InGaAs high electron mobility transistors (HEMTs) with InP recess etch stopper was adopted mainly for IC fabrication. Fabricated ICs demonstrate excellent data-multiplexing, demultiplexing, amplifying operation at 10 Gb/s.

A DC-60 GHz, 9 dB distributed amplifier IC module is fabricated with 0.15 /spl mu/m InAlAs-InGaAs low-noise HEMTs 155 GHz f/sub T/ and 234 max/. The device mounted in a metal package 1.8 mm coaxial cable signal interfaces. specially designed using three-dimensional electromagnetic field analyses, resulting very flat frequency characteristics of the within 1.5 gain ripples over entire bandwidth. multichip loaded two ICs cascade also fabricated, operates at 17.5 from 60 kHz to 48 GHz. 1...