A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed here. This nonlinear well formulated to preserve convergence capabilities simulation times. Extensive measurements have demonstrated the impact of on shapes I(V) characteristics, as load cycles. It shown that accurate modeling gate-and drain-lag dramatically improves results. particularly true when output loads deviate from optimum matching conditions corresponding real-world...

A versatile pulsed I(V) and 40-GHz RF measurement system is described with all the know-how methods to perform efficient, safe, reliable nonlinear transistor measurements. Capability of discrimination between thermal trapping effects a pulse setup demonstrated. Capture emission constant times are measured. method electrically measure resistance capacitance transistors proposed.

This paper describes a method to characterize signal distortion caused by amplifiers under modulated operating conditions. The is based on decomposing the output into one part that linearly correlated with input signal, and another nonlinear distortion. decomposition calculating statistical cross-correlation between spectra of signal. measurements are performed using vector network analyzer. signals repetitive can be designed match spectral characteristics any given modulation format.

In this article, we prove a semi-continuity property for both conductor divisors and logarithmic \'etale sheaves on higher relative dimensions in geometric situation. It generalizes result conductors of curves to dimensions, it can be considered as dimensional $\ell$-adic analogy Andr\'e's the Poincar\'e-Katz ranks meromorphic connections smooth curves.

A circuit modeling drain-lag effects has been added in a non-linear electrothermal model for AlGaN/GaN HEMTs. Modeling these trapping allows better description of the I-V characteristics measured devices as well their large-signal characteristics. This is suited to preserve convergence capabilities and simulation times non linear models devices. paper presents our approach, implementation CAD software, its operating mode, also parameters extraction from measurements. Then, significant...

We present here a new set of equations for modeling the I–V characteristics Field Effects Transistors (FETs), particularly optimized AlGaN/GaN HEMTs. These describe whole from negative to positive breakdown loci, and reproduce current saturation at high level. Using this model enables decrease process duration when same transistor topology is used several applications in T/R module. It can even be switches design, which most demanding application terms swing. Moreover, particular care was...

A newly calibrated testbed based on a commercial vector network analyzer (VNA) is proposed for the fast in-band signal characterization and linearization of nonlinear multiport devices. The can acquire both CW wideband modulated periodic signals without breaking contact with DUT, in up to five channels. time-domain measurements are made possible by calibrating all receivers frequency domain. This calibration provides phase amplitude correction modulation tones incident reflected waves...

In this article, we will introduce you to measurements for power transistor characterization: why they matter, are such a complicated, highly specialized field, and where think the technology of characterization is headed. The microwave transistors an important emerging field with many interesting engineering challenges. One can basically distinguish two areas: model extraction validation measurements. To make things simple, isothermal pulsed-bias pulsed S-parameter typically used purposes...

A novel approach for nonlinear characterization and modeling of microwave transistors has been developed. The whole process is organized as a set methods contained in the transistor database. This implies that are performed an integrated manner. I(V) S-parameters measured on wafer under pulsed conditions, suitable MESFETs, HEMTs or HBTs illustrated by proposed models.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

This paper presents a new automated and vector error-corrected active load-pull system allowing the characterization of microwave power transistors under coherent pulsed RF DC operating conditions. In this paper, use is focused on 240-/spl mu/m/sup 2/ GaInP-GaAs heterojunction bipolar transistor (HBT) (Thomson CSP-LCR, Orsay, France). On one hand, source measurements such are reported for different pulsewidths. other nonlinear simulations based an electrothermal model HBT have been performed...

The nonlinear FET I(V) behavior, including gate conduction and breakdown, has been investigated using a pulse measurement setup. An excessive current source observed in addition to the usual breakdown current. From these measurements, model conduction, phenomenon is proposed for simulation of high-power circuits. This presents an improvement terms load line prediction limits circuit design.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

This paper proposes a multi-tone signal pattern designed for accurate and easy measurements of nonlinear devices linearity factors merit. The stimulus we propose ensures that DUT's third order intermodulation products won't overlap. Thus, the relative phases source tones do not affect amplitudes products. usual metrics factors, ACPR (Adjacent Channel Power Ratio) or NPR (Noise Ratio), can be acquired with greater accuracy only amplitude measurements. work has been carried out sampler-based...

This paper describes an efficient coupling method improving the nonlinear time domain large signal load-pull measurements of active devices. approach consists in a small RF loop fixed near blended line that takes place between DUT and tuner. We take benefit two advantages: extremely low losses induced by coupler, taken very close to plane. It is shown this simple solution offers average directivity better than 15 dB (before calibration) along wide band from 2 18 GHz. compared with classical...

An overview of several hot S-parameter techniques is presented. It shown that different definitions are in use, causing confusion among users. Different explained a nutshell, together with their advantages and drawbacks. any accurate approach needs 6 parameters contradiction the classic small signal where 4 coefficients sufficient.

Trapping effects in power SiC MESFETs are investigated using a pulsed I-V S-parameters measurement system. It is shown that the main effect comes from substrate (buffer) traps sensitive to drain-source voltage. Moreover nonlinear model of trapping phenomenon, taking into account electron capture and emission with different time constants allows one predict experimentally observed RF performances devices.

This paper deals with pulsed LSNA measurements of high power AlGaN/GaN transistors performed in a multi-harmonic passive load-pull environment. Time domain waveforms are acquired during 150 ns window. measurement window is moved across the 20μs duration pulses, period 1 ms. Phase and gain drifts transistor characteristics versus time pulses obtained discussed.

Real-time active load-pull (RTALP) characterization of power transistors with a large signal network analyzer (LSNA) has the benefit greatly accelerating design amplifiers. However RTALP been so far limited to devices operating under CW excitations and constant biasing was therefore mostly applicable small memory effects. In TDMA communication or radar systems, amplifiers are excited by pulsed modulated RF signals operate biasing. For such applications measurement modulated/pulsed biasing/RF...

This paper presents MESFET measurement methods based on pulsed measurements that separate trapping and thermal effects. Derived from these measurements, a model of the effect is determined, as well model. The proposed nonlinear validated DC to RF frequencies, it handles dynamical dispersive effects does not depend hot bias point.

This paper describes a time domain measurement technique of large-signal RF pulsed waveforms, based on Agilent Nonlinear Network Measurement System (NNMS). A transistor is biased under conditions and the applied during bias pulses. The shows how measurements are acquired Up to 12 harmonic frequencies taken into account, in order provide an accurate voltage current description at both terminals.

This paper reports the first demonstration of behavior modeling and predistortion linearization a power amplifier (PA) for periodic modulated signals using vector network analyzer (VNA) operated in receiver mode. In this PA at 2.3 GHz is characterized 5 MHz LTE signal with peak-to-average ratio (PAPR) 10.2 dB. The phases Fourier spectrum measured by VNA are calibrated 20 OFDM signal. amplitudes frequency domain then used to reconstruct time domain. After synchronization, NMSE, dynamic AM-AM...

This paper presents a vector network analyzer(VNA) based testbed for accurate power amplifier (PA) linearizability testing under wideband modulated signals. The proposed utilizes two of the VNA's receivers to simultaneously capture calibrated input and output signals PA. corrects linear nonlinear distortions exhibited by underlying components (e.g., arbitrary waveform generator, up-converter, driver amplifiers, couplers) so that is solely indicative performance PA test. Experiments conducted...

This paper describes an efficient coupling method improving the nonlinear time domain large signal load-pull measurements of active devices. approach consists in a small RF loop fixed near blended line that takes place between DUT and tuner. We take benefit two advantages: extremely low losses induced by coupler, taken very close to plane. It is shown this simple solution offers absolute directivity better than 13 dB (before calibration) along wide band from 1 GHz 17 GHz, 10 18 GHz. compared...

An enhanced pulsed mode for RF measurements based on synchronized repetitive signals is proposed, with the unique capability to manage sets of pulses and consequently investigate pulse-to-pulse behavior high power active devices. This new technology applied a sampler-based NVNA (nonlinear vector network analyzers), without any dynamical losses. Burst AlGaN/GaN transistors are performed in multi-harmonic passive load-pull environment. Time domain waveforms S21 phase within burst acquired discussed.