A5040117163- Near-Field Optical Microscopy
- Optical Coatings and Gratings
- Microwave and Dielectric Measurement Techniques
- Advanced Measurement and Metrology Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Transition Metal Oxide Nanomaterials
- ZnO doping and properties
- Sensor Technology and Measurement Systems
- Advanced Electrical Measurement Techniques
- Thin-Film Transistor Technologies
- Force Microscopy Techniques and Applications
Swiss Federal Institute of Metrology
2023-2025
Indium tin oxide (ITO), a transparent conductive oxide, is widely used in optoelectronic applications due to its electrical conductivity, optical transparency, and chemical stability. This study employs spectroscopic ellipsometry (SE) analyze ITO layers, enabling nondestructive determination of film thickness, dielectric functions, bulk conductivity. Electrical properties derived from SE are compared with those obtained using the four‐point probe method (4PM) improve metrological tools for...
Abstract Scanning microwave microscopy (SMM) is a combination of an atomic force microscope with vector network analyzer (VNA) to measure locally resolved impedances. The technique finds application in the realms semiconductor industries, material sciences, or biology. To determine quantitative properties from measured impedances, system must be calibrated. Transferring calibration substrate onto under test strongly limited when using unshielded probes, as electromagnetic coupling...
This paper describes a method to model the impedance of Haddad type resistor over frequency interval ranging from 10 200 MHz, hereafter defined as LF-RF range. To this end, novel standards, 1 kΩ and 100 Ω, have been designed manufactured with aim sharply identifying nodes that define impedance. Resistor modelling is divided into two main parts: first one, describing central coaxial core second part, connectors through physical simulations subsequent analytical approach. The results show...
In this paper, a definition of the gain and added noise impedance matching networks for scanning microwave microscopy is given. This can be used to compare different techniques independently instrument measure S-parameter. As demonstration, devices consisting Beatty line, tuner, interferometric setups with without amplifiers have been investigated. Measurement frequencies up 28 GHz are used, maximal resulting found was 9504.7 per Siemens.