A5074414469- Advanced ceramic materials synthesis
- Advanced materials and composites
- Electromagnetic wave absorption materials
- Aluminum Alloys Composites Properties
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Advanced Antenna and Metasurface Technologies
- Perovskite Materials and Applications
- Metamaterials and Metasurfaces Applications
- Magnesium Oxide Properties and Applications
- Concrete and Cement Materials Research
- Advanced Sensor and Energy Harvesting Materials
- ZnO doping and properties
- Organic Light-Emitting Diodes Research
- 2D Materials and Applications
- Boron and Carbon Nanomaterials Research
- Microwave Dielectric Ceramics Synthesis
- Advanced Memory and Neural Computing
- Graphene research and applications
- High Entropy Alloys Studies
- Synthesis and Properties of Aromatic Compounds
- High-Temperature Coating Behaviors
- Bone Tissue Engineering Materials
- Crystallization and Solubility Studies
- MXene and MAX Phase Materials
Hunan University
2019-2025
Wuhan University of Science and Technology
2016-2025
National Engineering Research Center of Electromagnetic Radiation Control Materials
2024
Changsha University
2019-2024
Hangzhou Dianzi University
2023
Shenzhen University
2023
Huazhong University of Science and Technology
2021
China University of Geosciences
2020
Beijing Forestry University
2020
Wuhan University of Technology
2011-2013
Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a system incorporating multidimensional deep ultraviolet (DUV) optoelectronic synapses to address these challenges. To overcome the complexity and high cost of producing DUV using traditional wide-bandgap...
Polymer-derived SiBCN ceramics (PDCs-SiBCN) are promising ultrahigh-temperature owing to their excellent high-temperature oxidation resistance and electromagnetic wave (EMW)-absorbing capability. In this paper, the microstructure evolutions, dielectric properties, EMW absorption properties of Y2O3-doped were investigated. The results reveal that Y2O3 acting as a catalyst promotes formation SiC, BN(C), graphite crystalline phases in ceramics, these constructed conduction polarization enhance...
Two-dimensional (2D) semiconductors have attracted considerable attention in recent years. However, to date, there is still no effective approach produce large-scale monolayers while retaining their intrinsic properties. Here, we report a simple mechanical exfoliation method and high-quality 2D semiconductors, by designing an atomically flat Au-mesh film as the peeling tape. Using our prefabricated mesh tape, limited contact region (between crystal Au) could provide enough adhesion...
Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution-processable semiconductors such as organic (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr3 perovskite quantum dots (PQDs) OSCs, fabrication solution-processed PQD/OSC reported. The phototransistors based on bilayer PQD/PDVT-10 show responsivity up to 1.64 × 104 A W-1 , specific detectivity 3.17...
Doping is a powerful technique for engineering the electrical properties of organic semiconductors (OSCs), yet efficient n-doping OSCs remains central challenge. Herein, discovery two superbase dopants, namely P2-t-Bu and P4-t-Bu as ultra-efficient n-dopants reported. Typical n-type such N2200 PC61 BM are shown to experience significant increase conductivity upon doping by dopants. In particular, optimized P2-t-Bu-doped reaches record-high value 2.64 S cm-1 . The polaron generation...
A new quinoidal acceptor building block (namely IQTT) is designed with directed diradical character to control and narrow the bandgap while good chemical stability maintained assistance of quantum mechanics simulations. Then IQTT-based monomer donor–acceptor (D–A) polymer (PIQTT) are synthesized as well isoindigo-based (IID) D–A (PITT). It found that IQTT displays stronger electron-withdrawing ability more planar backbone conformation than IID in copolymers. Both PIQTT exhibit significantly...
Abstract Doping is a powerful technique for tuning the electrical properties of organic semiconductors (OSCs). Although numerous studies are performed on OSC doping, thus far only few n‐type dopants have been developed. Herein, two low‐cost nucleophilic bases reported, namely 1,5,7‐Triazabicyclo [4.4.0] dec‐5‐ene (TBD) and 1,5‐Diazabicyclo [4.3.0] non‐5‐ene (DBN) n‐doping OSCs. The found to significantly enhance conductivity In particular, compared classic n‐dopant...
Doping is an important technique for semiconductor materials and devices, yet effective controllable doping of organic-inorganic halide perovskites still a challenge. Here, we demonstrate facile way to dope two-dimensional Sn-based perovskite (PEA)
Laser engineered net shaping (LENS) is an advanced additive manufacturing technology combining rapid prototyping and synchronization technology. Its multi-powder feeder delivery system enables multi-materials building in single deposition, which appropriate for of functionally graded materials (FGMs). In this study, martensitic-stainless steel (MSS)/austenitic stainless (ASS) FGMs with composition transitioning from 100% MSS incrementally to ASS by 25% gradients are fabricated LENS. The...
Abstract Doping is of great importance to tailor the electrical properties semiconductors. However, present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply some OSCs conditionally, seriously limiting their general applications. Herein, a novel p‐doping mechanism revealed by investigating interactions between dopant trityl tetrakis(pentafluorophenyl) borate (TrTPFB) and poly(3‐hexylthiophene) (P3HT). It found that electrophilic attack cations on...
Solution-processed metal halide perovskites hold immense potential for the advancement of next-generation field-effect transistors (FETs). However, instability perovskite-based has impeded their progress and practical applications. Here, ambient-stable high-performance FETs based on 2D Dion-Jacobson phase tin perovskite BDASnI4 , which high film quality excellent electrical properties, are reported. The channels established by engineering crystallization process via employment ammonium salt...