A5069949103- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Electronic and Structural Properties of Oxides
- Advanced Battery Materials and Technologies
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Advancements in Battery Materials
- Ferroelectric and Piezoelectric Materials
Kwangwoon University
2020-2024
Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties layers was investigated. X-ray diffraction (XRD) analysis showed a significant increase in peak intensities different faces β-Ga2O3 {(-201), (-401) (002)}. photoelectron spectroscopy (XPS) measurement that atomic ratio oxygen increases under high-temperature annealing. Moreover, an...
In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing N2 or O2 gas. The chemical composition determined X-ray photoelectron spectroscopy (XPS) before after annealing, its properties evaluated plotting current–voltage (I–V) curve....
It is shown in this work that annealing of Schottky barrier diodes (SBDs) the form Ni/AlN/SiC heterojunction devices an atmosphere nitrogen and oxygen leads to a significant improvement electrical properties structures. Compared non-annealed device, on/off ratio annealed SBD increased by approximately 100 times. The ideality factor, derived from current-voltage (IV) characterization, decreased factor ~5.1 after annealing, whereas height ~0.52 0.71 eV. bonding structure AlN layer was...
In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films subjected to UV/ozone treatment, which results in reduced oxygen vacancies the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), higher mobility (4.01 cm2V−1s−1). gate leakage current is as low 1.0 × 10−11 A at VGS = 10 V by depletion formed between...
In this study, we investigated the influence of post-deposition annealing (PDA) process on lithium phosphate (Li3PO4) solid-state thin films silicon carbide (SiC) substrate in terms materials and electrical properties. Li3PO4 films were deposited through radio frequency (RF) sputtering was performed a temperature range 200–400 °C. The show typical amorphous structures, no changes are observed even after 400 °C PDA process. Li 1 s/P 2p ratio varies with changing highest is detected under 300...
Ga 2 O 3 / n -type 4H-SiC heterojunction diodes were fabricated by depositing thin films on off-axis cut type substrates RF magnetron sputtering. The influence of oxygen atmosphere annealing the film quality and optical properties layers is investigated. I – V characteristics are acquired in range from 25 to 175 °C with temperature step 50 °C. annealed exhibit improved rectifying ratio (∼1 × 10 8 for ±2V) an ideality factor (1.83) at Additionally, photodiode that was presence shows increased...
Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> /SiC heterojunction were fabricated by RF magnetron sputtering. The influence of nitrogen atmosphere annealing on the electrical and deep level traps in diodes was investigated current density-voltage (J- V), capacitance-voltage (C- V) characteristics, as well transient spectroscopy (DLTS). leakage barrier height post annealed device...
A systematic study of Schottky barriers fabricated on Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> film is reported. The barrier heights (SBHs) and current transport mechanisms were estimated through the analysis current-voltage (I-V), capacitance-voltage (C-V), current-voltage-temperature (I-V-T), x-ray photoelectron spectroscopy (XPS) measurements. values SBH Ni varied from...
We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction and PiN diodes in temperature range from 293 K to 573 K. The sensitivity devices was calculated slope forward voltage versus plot. At current 10 μA, diode presented highest peak (4.11 mV −1 ), compared peaks (2.1 1.9 , respectively). minimum errors were 0.365 0.565 K, respectively, for 80 μA±10 μA. corresponding value 0.985 150 In contrast presents lower increase saturation with...
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and Baliga’s figure merit Ga2O3 demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivity is lower than that other wide-bandgap materials, resulting in degradation electrical performance reduced reliability devices. heterostructure formation on substrates with has been noted to facilitate heat dissipation In this work, thin films an Al2O3...
This study investigated the impact of ultraviolet/ozone (UV/O3) treatment on electrical and morphological characteristics Pt/Ga2O3 Schottky barrier diodes (SBDs). Current voltage were measured within temperature range 298-423 K. The fabricated SBDs exhibit significant temperature-dependent variations height (SBH) ideality factor, indicating presence SBH inhomogeneities at Pt-Ga2O3 interface. Our results suggest that UV/O3 tunes its inhomogeneity. X-ray photoelectron spectroscopy (XPS) atomic...
We investigated the post annealing effect of Al implantation in n -type 4H-SiC by using deep level transient spectroscopy (DLTS). The Schottky contacts were deposited on epitaxial layer substrates and Al-implantation structures has been examined with without post-annealing process. a substrate was implanted Al-ion at an energy 300 keV dose 1.0 × 10 15 cm –2 . studied 1700 C after ion implantation. DLTS measurements performed before implantation, order to determine characteristics magnitudes...
ABSTRACT This study report on the formation of AlN/SiC heterostructure Schottky diodes for use temperature sensing applications enhance sensitivity. We analyzed sensitivity diode sensor depending annealing temperature. AlN/4H-SiC were fabricated by depositing aluminum nitride (AlN) thin film 4H/SiC radio frequency sputtering. The forward bias electrical characteristics determined under DC (in voltage range 0–1.5 V). ideality factor, barrier height, and derived through...