A5053072280- Semiconductor Quantum Structures and Devices
- Spectroscopy and Laser Applications
- Semiconductor Lasers and Optical Devices
- Laser Design and Applications
- Nanowire Synthesis and Applications
- Advanced Semiconductor Detectors and Materials
- Atmospheric Ozone and Climate
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- solar cell performance optimization
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Analytical Chemistry and Sensors
- Quantum Dots Synthesis And Properties
- Renewable energy and sustainable power systems
- Optical properties and cooling technologies in crystalline materials
- Ranque-Hilsch vortex tube
- Diamond and Carbon-based Materials Research
- Gas Sensing Nanomaterials and Sensors
- Radio Frequency Integrated Circuit Design
- Advanced Sensor Technologies Research
- Building energy efficiency and sustainability
- Advanced Chemical Sensor Technologies
- Chalcogenide Semiconductor Thin Films
Wrocław University of Science and Technology
2013-2024
AGH University of Krakow
2016-2024
Institute of Environmental Protection
2013
We present an optical spectroscopic study of InGaAs/AlInAs active region quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with subwavelength gratings fabricated reactive ion etching. Fourier-transformed photoluminescence measurements were used to compare the emission properties structures before and after processing gratings. Our results demonstrate a significant increase intensity related intersubband transitions in mid-infrared, which is attributed...
In this paper, we report on the experimental investigation of thermal performance lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include double trench, single mesa, and buried heterostructures, which were grown by combined Molecular Beam Epitaxy (MBE) Metal Organic Vapor Phase (MOVPE) techniques. The characteristics lasers are investigated Charge-Coupled Device CCD thermoreflectance. This method allows for fast accurate registration high-resolution temperature...
Abstract Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds alloys are the most effective photovoltaic devices. Record efficiency of MJSCs exceeds 44% under concentrated sunlight. Individual subcells in series crucial components these In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) InGaAsN subcell for InGaAsN/GaAs tandem cell. The parameters epitaxial structure...
GaAsN and InGaAsN semiconductor alloys with a small amount of nitrogen, so called dilute nitrides, are especially attractive for telecom lasers very efficient multijunction solar cells applications. The epitaxial growth these materials using MBE MOVPE is big challenge technologists due to the large miscibility gap between GaAs GaN. Additionally, elaboration process quaternary more complicated than epitaxy because precise determination their composition requires applying different examination...
Abstract The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to InP grown by low pressure metal−organic vapour phase epitaxy. Silane disilane were used as dopant sources. main task investigations was obtain heavily doped suitable for usage plasmon−confinement layers in the construction mid−infrared InAlAs/InGaAs/InP quantum−cascade lasers (QCLs). It requires concentration 1×10
Dilute nitride (In, Ga)(As, N) alloys grown on GaAs substrate are a very attractive materials for optoelectronics. In this work we compare the optical properties of N)/GaAs triple quantum well by atmospheric pressure metal organic vapour phase epitaxy. As and annealed structures were investigated means photoluminescence contactless electroreflectance spectroscopies. Energies fundamental transition from each measurement determined compared, moreover value Stokes shift was assigned discussed.
In the presented work, influence of quantum well and barrier thicknesses on optical characteristics InGaAs/AlInAs superlattices was reported. Six different structures 0.53 Ga 0.47 As/Al 0.48 0.52 As lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties obtained examined means photoluminescence spectroscopy. This technique allows quick, simple non-destructive measurements radiative transitions in semiconductor heterostructures. The...
Abstract The main goal of the studies on epitaxial regrowth process InP patterned substrates is to gain knowledge about growth rates and interface quality various areas improve fabrication technology for future applications. Prepared samples were measured at every step by scanning electron microscope (SEM), optical with dark field phase contrast modes, atomic force (AFM) also using profilometer WLI (White Light Interferometer). Fabrication steps divided into three groups. First was 5 µm...
In the presented work, an optical approach of stress determining in metalorganic vapor phase epitaxy (MOVPE) grown quantum cascade laser (QCL) structures was reported. case such sophisticated containing hundreds thin layers, it is important to minimize generated QCL core. Techniques enabling determination layers as those described article are photoluminescence and Raman spectroscopies. Based on shift or changes signal, possible analyze occurring structure.
We present an optical spectroscopic study of InGaAs/AlInAs active region quantum cascade lasers grown by low pressure metal organic vapor phase epitaxy combined with subwavelength gratings fabricated reactive ion etching. Fourier-transformed photoluminescence measurements were used to compare the emission properties structures before and after processing gratings. Our results demonstrate a significant increase intensity related intersubband transitions in mid-infrared, which is attributed...
We present the results of Fourier-transform measurements for determination refractive indices four semiconductor alloys in midinfrared spectral range from 10 to 300 K. investigate double-sided-polished, undoped <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><a:mrow><a:mi>In</a:mi><a:mi mathvariant="normal">P</a:mi></a:mrow></a:math> and <e:math xmlns:e="http://www.w3.org/1998/Math/MathML"...
Solar cells are very promising renewable resource. High efficiency of AIIIBV based solar achieved in multijunction constructions. The technology these devices is difficult due to the complex electrical and optical interactions between different semiconductor layers. Usually, individual subcells interconnected via Esaki tunnel diodes. This work presents computer modelling GaAs diodes which will be applied tandem GaAs/InGaAs cells. Designed structures were grown by atmospheric pressure metal...
Praca byla wspolfinansowana przez Narodowe Centrum Badan i Rozwoju grant nr PBS1/B3/2/2012 ″EDEN″, oraz z dzialalności statutowej Politechniki Wroclawskiej.
In this paper authors are presenting the first results of electrically active defect investigations in three 5×UD-In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As/Al xmlns:xlink="http://www.w3.org/1999/xlink">0.42</sub> xmlns:xlink="http://www.w3.org/1999/xlink">0.58</sub> As MQW structures grown on n-InP:S substrates by low pressure metal organic vapour phase epitaxy at...
Abstract Here we present optical spectroscopy studies to examine structural and properties of active region quantum cascade lasers grown fully by MOCVD technique. The part is InGaAs/AlInAs based multilayer structure nominally lattice matched InP substrate. In this communication study a set structures with different growth temperature the cladding layers its influence on core. x-ray (XRD) allowed determine widths constituent compare obtained values nominal ones. Fourier-transformed...
Quantum cascade laser is one of the most sophisticated semiconductor devices.Its technology requires extremely high precision and layers quality.Device performance limited by thermal extraction form core.One solutions to apply highly resistivity epitaxial material acting as insulating layer on top QCL.Present work describes consequent steps elaboration MOVPE Fe-compensated InP for further applications in quantum lasers.
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Over the last few years, ternary and quaternary semiconductor compounds containing (Ga, In) (N, As) elements become subject of many studies. Both, indium nitrogen, lowers band gap gallium arsenide, but their influence on lattice parameter is compensated. As a result it possible to deposit epitaxial layers 1 eV , or less, material which matched GaAs substrate. technology well known much cheaper than more sophisticated phosphorus alloys. Optoelectronic devices composed dilute nitrides...
Heterostructures of GaInNAs/GaAs multiple quantum wells were characterized by high resolution x-ray diffraction. Complexity and stress compensating effect such quaternary alloys cause many characterization problems. One the most important issue is determination composition material, which cannot be performed utilizing only one method. That why structural analysis had to related with optical measurements give different information correlated composition. A comparison theoretical calculations...