In this Letter, we present a new class of near-infrared photodetectors comprising Au nanorods-ZnO nanowire hybrid systems. Fabricated FET devices showed large photoresponse under radiation wavelengths between 650 and 850 nm, accompanied by an "ultrafast" transient with time scale 250 ms, more than 1 order magnitude faster the ZnO response above band gap. The generated photocurrent is ascribed to plasmonic-mediated generation hot electrons at metal-semiconductor Schottky barrier. presented...

Rational integration of metal nanoparticle in 1D semiconductor-based devices for generation enhanced and engineered properties is a novel vastly unexplored field with great potential optoelectronics sensing applications.

We present a novel technique for the manipulation of energy spectrum hard-wall InAs/InP nanowire quantum dots. By using two local gate electrodes, we induce strong transverse electric field in dot and demonstrate controlled modification its electronic orbitals. Our approach allows us to dramatically enhance single-particle spacing between first levels thus increment working temperature our single-electron transistors. devices display very robust modulation conductance even at liquid nitrogen...

Droplet evaporation is a simple method to induce organization of Au nanorods into ordered superstructures. In general, the self-assembly process occurs by aqueous suspensions under strictly controlled experimental conditions. Here we present formation large area vertical arrays droplet nanorod organic suspensions. The uncontrolled (free air) such yielded domains covering entire 5 mm diameter droplet. Detailed investigation revealed that organized highly at interface between solvent and air...

A droplet evaporation/stamping method was employed to fabricate closely packed arrays of Au nanorods aligned parallel or perpendicular a support. The potential as SERS substrates investigated using model molecule 4-aminobenzenethiol (4-ABT), for which enhanced signals where obtained compared the bulk molecule. Enhancement factors order 104 and 105 were calculated arrays, respectively. Quantitative Raman detection 4-ABT with limits in nM concentration range. Fabricated displayed good...

Noble metal nanostructures of different aspect ratios were synthesised and optically characterised at individual nanorod level. Rayleigh scattering spectroscopy/scanning electron microscopy measurements performed to uniquely correlate optical signatures with size shape. Scattering spectra nanorods dominated by the intense longitudinal surface plasmon resonance (SPR) band in near-infrared part spectrum. This was found be highly shape dependent. Droplet evaporation techniques application...

In this paper we explore large non-faradaic contributions occurring at individual nanowire electrodes and array devices. We report fabrication of well-defined gold nanowires arrays silicon chip substrates via hybrid E-beam/photolithography. Nanowire their exhibit good electrical conductivity. demonstrate highly reproducible sigmoidal, quasi-steady-state voltammograms in the model redox probe hexaminoruthenium (III) chloride. observe large, unexpected measured or capacitive currents these...

Au nanorod plasmonic superstructures with a high degree of optical anisotropy were used for demonstration novel encoding system.

We present a non-resonant Raman spectroscopy study of individual ZnO nanowires mediated by Au nanorod surface plasmons.

The assembly of Au nanorods average size 14 × 42 nm was investigated by electric field assisted deposition. displayed a rich behavior with formation one dimensional (1D) architectures under specific experimental conditions. process found to be dependent on both the intensity applied and frequency, in contrast what expected for metallic particles. A theoretical model based interpretation as core–shell entities proposed order explain observed behavior. As result overall deposition represented...

Anisotropic 1-D metal nanostructures are attractive building block for future optoelectronic nanoscale devices and systems. However, a critical challenge remains the lack of manipulation methods that enable controlled positioning orientation in fast, reliable scalable manner. To address this challenge, we explore dielectrophoretic based assembly discrete gold nanorods demonstrate site selective these rods. The demonstrated optical sensitivity such large order to local environment opens way...

The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family by metalorganic vapour phase epitaxy, from dome ring-like structures to double dot in ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as interesting candidate for single quantum emitters at telecom wavelengths, potentially...

Abstract We report on the growth and electronic properties of polycrystalline III–V semiconductors, which to date have not been discussed in depth literature. semiconductor thin films were grown by metalorganic vapour phase epitaxy temperature range 410 °C–475 °C, is compatible for integration into Back-End-Of-Line (BEOL) silicon based integrated circuits. The thickness this study tens a few hundreds nanometers, deposited amorphous substrates (either smart-phone-grade glass or Si/SiO 2 )...

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the reported, with electron mobilities ~100 cm2/V·s achieved room temperature, values reaching 155 a heterostructure including polycrystalline InAs film. Test structures fabricated an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type...

Nanoscale heating production using nanowires has been shown to be particularly attractive for a number of applications including nanostructure growth, localized doping, transparent and sensing. However, all proof-of-concept devices proposed so far relied on the use highly conductive nanomaterials, typically metals or doped semiconductors. In this article, we demonstrate novel nanoheater architecture based single semiconductor nanowire field-effect transistor (NW-FET). Nominally undoped ZnO...

A three-dimensional ordered and self-organized semiconductor system emitting highly-polarized light in the yellow-orange visible range (580-650 nm) is presented, comprising self-assembled in-plane AlInP wires vertically stacked regularly-spaced columns. More than 200 per column without detectable defect formation could be stacked. Theoretical simulations temperature-dependent photoluminescence provided a benchmark to engineer multilayered structures showing internal quantum efficiency at...

In this work, we fabricated fully integrated single nanowire-based electrochemical devices at silicon chip substrates using a novel combined self-assembly approach. To end, highly uniform striped nanowires composed of platinum body and magnetic cobalt-platinum tip were synthesized by template electrodeposition. A combination fluidic/capillary assembly was employed to orient trap nanowires, respectively, pre-defined nickel receptor sites substrates. Post integration performed first depositing...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Andrea Pescaglini, Stefano Roddaro, Daniele Ercolani, Lucia Sorba, Francesco Giazotto, Fabio Beltram; Role of contact material on transport properties InAs nanowire Josephson junctions. AIP Conference Proceedings 23 December 2011; 1399 (1): 281–282. https://doi.org/10.1063/1.3666363 Download citation file: Ris...

In recent years, on-chip nano-electrodes have enabled electrochemical analytical sensors that exhibit enhanced performance. These tremendous potential for application in Manufacturing 4.0 paradigms. A key challenge with these is electric fields, associated biased interconnection tracks, can induce charge build-up the electrolyte solution leading to undesirable charging currents superimposed on Faradaic signals. During in-line measurements, it very difficult apply background subtraction...

The effects of growth conditions choice and post-growth layer exposure to hydrides have been studied in InP/AlInAs self-organized nanostructures grown by low pressure MOVPE. Here we show how the size density low-dimensional structures can be manipulated controlled changing parameters. final shape is governed influence exposure. For example, arsenization protocols original InP dot represent crucial step transformation from dots rings (and domes). We also demonstrate photoluminescence...

In this report, we demonstrate for the first time, a platform to generate polarization-entangled photons, based on highly symmetric pyramidal quantum dots, achieving both site-controlled and electrically-injected capabilities at same time. Combining with time gating techniques, our triggered light sources were proven violate Bell's inequalities, an even more stringent examination applications future information technologies.