An extension of the Doherty amplifier, which maintains high efficiency over a wide range output power (>6 dB), is presented in this paper. This extended amplifier demonstrated experimentally with InGaP/GaAs heterojunction bipolar transistors at 950 MHz. Power-added (PAE) 46% measured P/sub 1dB/ 27.5 dBm and 45% 9 dB backed off from 1dB/. Additionally, PAE least 39% maintained for an 12 improvement classical where typically obtained up to 5-6 Compared single transistor class-B similar gain...

This paper demonstrates a high speed digital technique to produce binary (digital) signals that encode representative RF (with time varying envelope) as needed for wireless communications. Specifically, it shows IS-95 format CDMA can be generated with single bit data stream at 3.6 Gb/S. The uses band-pass delta-sigma modulation so the quantization noise is shaped out of frequency band interest. approach points way single-chip, DSP-based transmitters, used in conjunction switching mode power...

Design considerations are discussed for current-mode class-D (CMCD) microwave power amplifiers. Factors affecting amplifier efficiency described analytically and via simulation. Amplifiers reported that incorporate parallel LC resonators alongside the switching transistors. To reduce parasitic resistance, bond-wires were utilized to implement a high Q inductor in resonator. An experimental CMCD based on GaAs HBTs is reported, with collector of 78.5% at an output 29.5 dBm (0.89 W) 700 MHz.

A simple analytical model is proposed and shown to be effective in predicting the nonlinear behavior of single-ended amplifiers, as well Doherty amplifiers implemented with GaAs heterojunction bipolar transistors (HBTs) for handset applications. The based on linear components extracted from a vertical inter-company Skyworks Solutions Inc.'s InGaP/GaAs HBT devices. Equations derived provide insights into effects individual gain phase both amplifiers. indicates that tuning delay inserted front...

A novel Model Order Reduction approach for the construction of Dynamic Compact Thermal Models is presented. With respect to previous approaches, this methodology allows reducing complexity constructed models, from quadratically linearly dependent on number independent heat sources. In such a way, constructing practically without limitations The proposed validated through application two state-of-the-art electronic systems.

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The last decade has seen GaAs HBTs emerge as the dominant technology in wireless handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards co-integration of depletion mode n-FET HBT. merger Bipolar FET, or BiFET, gives an additional degree freedom design advanced amplifiers independent a silicon controller. This paper provides overview...

Adaptive Digital Predistortion (DPD) is applied to a spec-compliant class-AB GaAs HBT PA module for WCDMA handsets. It shown that, by using re-optimized load line, the efficiency can be increased from 37.5% 47% at nominal 28.5 dBm output power, while maintaining same excellent linearity of original PA. The quiescent current consumption also reduced down 40 mA all power levels, enabling up 49% average dc savings without dynamic biasing. Under 2∶1 VSWR, 7% 11% higher PAE demonstrated 28 dBm,...

A high-isolation, 16/spl times/16 crosspoint switch is reported, capable of aggregate data throughput 160 Gb/s with low crosstalk and output jitter. Each the 16 fully asynchronous channels can transmit at rates up to 10 a worst case r.m.s. jitter 4 ps. Single channel operation below 2.8 ps has been demonstrated. The high-isolation circuitry allows for inter-channel isolation more than 40 dB all operative. circuit based on AlGaAs/GaAs heterojunction bipolar transistor technology.

This paper is aimed at the analysis of influence electrothermal and impact-ionization effects on dc behavior bipolar cascode amplifiers. A simple physics-based relationship derived to predict limit safe operating area in output diagram. Experiments circuit simulations are performed amplifiers GaAs SiGe technologies examine explain distortion <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$...

Adaptive Digital Predistortion (DPD) is applied to a spec-compliant class-AB GaAs HBT PA module for WCDMA handsets. It shown that, by using re-optimized load line, the efficiency can be increased from 37.5% 47% at nominal 28.5 dBm output power, while maintaining same excellent linearity of original PA. The quiescent current consumption also reduced down 40 mA all power levels, enabling up 49% average dc savings without dynamic biasing. Under 2:1 VSWR, 7% 11% higher PAE demonstrated 28 dBm,...

InGaP-GaAs based BIFET is a novel technology that integrates HBT and FET onto single wafer. The technique expands functionality of circuits reduces the cost. A four-terminal large-signal model was developed for accurate DC RF applications. device has p-layer as backgate significant impact on DC/RF characteristics therefore, drain current, gate leakage current all charges/capacitances are 3-dimensional functions, which increases complexity model. predicts very well IV/leakage curves...

A simple analytical model is proposed and shown to be effective in predicting the nonlinear behavior of single-ended amplifiers as well Doherty implemented with GaAs HBTs for handset applications. The based on linear components extracted from a VBIC Skyworks InGaP/GaAs HBT devices. Equations derived provide insights into effects individual gain phase amplifier. It found that tuning delay inserted front auxiliary PA within can improve linearity at high input power. efficacy demonstrated by...

This paper presents an investigation of the safe-operating-area boundary bipolar cascode amplifiers in GaAs and SiGe technologies. A simple relation is derived to predict instability onset due electrothermal avalanche effects. Circuit simulations experiments performed on test structures are employed analyze influence thermal coupling between transistors beneficial impact base ballasting.

A 12x12 cross-point switch is reported which operates with data rate per channel of 10 Gb/s. The aggregate for the switch, 120 Gb/s, one highest any IC. circuit based on AlGaAs/GaAs HBT technology and employs a double switching architecture to minimize jitter. An rms jitter below 4 psec has been demonstrated.

Recently BIFET, a four-terminal MESFET with p-layer as backgate, emerged new technology for wireless, application, that allows HBT and FET to integrate onto same wafer therefore expands functionalities of circuits reduce the cost. A novel DC model was developed first time accurate applications. In this model, drain current, gate current well leakage are 3D functions accurately all terminal currents temperature dependence. The also predicts very IV curves case when backgate is connected...

DC-DC boost converters operating at very high switching frequencies (up to 20 MHz) have been fabricated using GaAs HBT technology. The pulsewidth modulator, driver amplifier and power switch implemented on a single chip. With an input voltage of 3.6 V DC, frequency 10 MHz output > 1.5 W, efficiency over 80% has obtained.

This paper shows that current mode class-D (CMCD) amplifiers with integrated parallel LC resonator can achieve high efficiency at RF frequencies. In contrast to the conventional amplifier, output shunt capacitance discharge loss is eliminated in a CMCD amplifier topology by satisfying zero voltage switching (ZVS) condition. To reduce parasitic resistance, bondwires are utilized implement Q inductor resonator. An experimental collector of 78.5% power 29.5dBm (0.89W) demonstrated using GaAs...

A method for FET yield and scaling analysis of the device in a merged FET-HBT GaAs process (BiFET) is described. Using current-source configuration depletion mode FET, number devices were connected stacked together series then this stack was replicated into multiple columns; allows and/or test over relatively large area. With just one landing dc probe, any single 210 set that has an IDSS out spec will cause failure can be quickly identified its location mapped. In second type analysis, quick...

This work describes a novel low-density bipolar memory circuit which functions near the maximum clock rate of technology. An InGaP/GaAs HBT implementation 64-bit programmable look up table is demonstrated. By simulation, read function shows 23ps delay through array. Measurements in package validates successful operation at 5GHz