Guoxiang Chen

ORCID: 0000-0001-8933-7176
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About
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Research Areas
  • 2D Materials and Applications
  • ZnO doping and properties
  • Gas Sensing Nanomaterials and Sensors
  • MXene and MAX Phase Materials
  • GaN-based semiconductor devices and materials
  • Graphene research and applications
  • Ga2O3 and related materials
  • Advanced Thermoelectric Materials and Devices
  • Boron and Carbon Nanomaterials Research
  • Copper-based nanomaterials and applications
  • Intermetallics and Advanced Alloy Properties
  • Electrocatalysts for Energy Conversion
  • Semiconductor materials and devices
  • Metal and Thin Film Mechanics
  • Advanced Photocatalysis Techniques
  • Aluminum Alloys Composites Properties
  • Hydrogen Storage and Materials
  • Ammonia Synthesis and Nitrogen Reduction
  • Advanced Chemical Sensor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Perovskite Materials and Applications
  • Electrochemical Analysis and Applications
  • Advanced ceramic materials synthesis
  • Microstructure and mechanical properties
  • Analytical Chemistry and Sensors

Xi'an Shiyou University
2016-2025

Guangdong University of Technology
2024

Fudan University
2023

Shaanxi Normal University
2006-2022

University of Florida
2017

Chinese Academy of Sciences
2013

Shanghai Advanced Research Institute
2013

Nanchang University
2001-2012

Henan University of Engineering
2011-2012

Hunan University
2011

The crystal structure, surface morphology, chemical state and optical properties of Al-doped ZnO films grown at different sputtering powers are studied. Results indicated that compressive stress related to defects exists in all the samples measured by X-ray diffraction. Blue-green emission mechanisms a blue-shift were explored based on sites. peak 458 nm comes from electron transition interstitial Zn top valence band conduction misplaced oxygen defects. 490 vacancies or O complex defect...

10.1039/c3ra40750k article EN RSC Advances 2013-01-01

We have performed the first-principles calculations on structural, electronic, and magnetic properties of 3d transition-metal™ (Cr, Mn, Fe, Co, Ni) atoms doped 2D GaN nanosheet. The results show that TM atom substituting one Ga leads to a structural reconstruction around impurity compared pristine doping can induce moments, which are mainly located its nearest-neighbor N atoms. It is found Mn- Ni-doped nanosheet with 100% spin polarization characters seem be good candidates for spintronic...

10.1002/qua.25118 article EN International Journal of Quantum Chemistry 2016-03-07

Finding ideal perovskite oxides for water splitting is challenging due to their vast compositional space.In this study, the TPOT machine learning approach was utilized predict photocatalytic properties of 5329 ABO3-type based on 14 features. Regression and classification models were built band edge locations gap types. After optimization, model error decreased by 42.4% . Eventually, 57 promising candidates identified sorted according characteristics assist experimental synthesis, suggesting...

10.2139/ssrn.5078736 preprint EN 2025-01-01

The first principles method is utilized to study the adsorption properties of CO2, NO2 and SO2 on pristine modified BP. results indicate that doping defects can effectively regulate electronic sensing performance BP systems. Eads decrease after introduction defects, indicating improve stability shows non-magnetic semiconductor band gap 0.89 eV, defective exhibits nonmagnetic metal properties. After adsorbing gas molecules, systems exhibit semiconductor, ferromagnetic metallic, magnetic...

10.2139/ssrn.5088669 preprint EN 2025-01-01

Atomically precise Au25 superatoms with electron-deficient Au12 shells and electron-rich Au13 cores immobilized on the surface of CeO2 nanorods achieved novel catalytic activity for styrene oxidation.

10.1039/c3nr00144j article EN Nanoscale 2013-01-01

We study the electronic and magnetic structures of quasi-one-dimensional interfaces along zigzag direction in two-dimensional GaN/SiC heterostructures using first-principles calculations. Four representative with six inequivalent are discussed detail. Our results indicate that a bulk electric field will develop only when both feature no gap states total net charge at opposite sign. All geometries studied exhibit an intriguing conductor character, which three show finite nonzero moment....

10.1103/physrevb.95.045302 article EN publisher-specific-oa Physical review. B./Physical review. B 2017-01-03
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