A5006164444- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Advanced materials and composites
- Semiconductor materials and devices
- Nuclear Physics and Applications
- Radiation Detection and Scintillator Technologies
- Particle Detector Development and Performance
- GaN-based semiconductor devices and materials
- Laser-Matter Interactions and Applications
- Spectroscopy and Quantum Chemical Studies
- Acoustic Wave Resonator Technologies
- Physics of Superconductivity and Magnetism
- Radiation Therapy and Dosimetry
- Ion-surface interactions and analysis
- Advanced Fiber Laser Technologies
- Thermal properties of materials
- Superconducting and THz Device Technology
- Semiconductor materials and interfaces
- Plasma Diagnostics and Applications
- Metallurgical and Alloy Processes
Institut de Microelectrònica de Barcelona
2023-2024
Universitat de Barcelona
2009-2020
Thinfilm (Sweden)
2013-2017
Linköping University
2013-2017
Hardness is an essential property for a wide range of applications. However, hardness alone, typically accompanied by brittleness, not sufficient to prevent failure in ceramic films exposed high stresses. Using VN as model system, we demonstrate with experiment and density functional theory (DFT) that refractory VMoN alloys exhibit only enhanced hardness, but dramatically increased ductility. V0.5Mo0.5N 25% higher than VN. In addition, while nanoindented VN, well TiN reference samples,...
Abstract We report the direct observation of superconductivity in nitridized-aluminum thin films. The films are produced by sputtering deposition aluminum a controlled mixture nitrogen diluted argon. concentration applied directly determines properties superconducting observe samples displaying critical temperatures up to 3.38 ± 0.01 K and resilience in-plane magnetic fields well above 1 T, with good reproducibility results. This work represents an unambiguous demonstration tunable...
The accurate detection and dosimetry of neutrons in mixed pulsed radiation fields is a demanding instrumental issue with great interest both for the industrial medical communities. In recent studies neutron contamination around linacs, there growing concern about secondary cancer risk radiotherapy patients undergoing treatment photon modalities at energies greater than 6 MV. this work we present promising alternative to standard detectors an active method measure linac using novel ultra-thin...
The generation of high-order harmonics in solid crystals has received considerable attention recently. Using a driver laser with 0.8 µm wavelength and 28 fs ultrashort pulses, we present experimental results, accompanied theoretical considerations, suggesting that the actual sources are nanometer-sized localized transient electronic states on surface materials when intensity is non-perturbative regime. Adaptation bond model harmonic into regime including quantum features process provide...
We describe the design, fabrication process and characterization of a thermal neutron detector based on ultra-thin silicon PIN diodes with 3D electrodes 10B4C converter layer. The sensors were fabricated SOI an active thickness 20 μm which allows for low gamma sensitivity, while structure results in lower capacitance that equivalent planar sensor. 2.7 layer was deposited through RF magnetron sputtering whole wafer, opening path mass-production. detectors tested beam at nuclear reactor...
Abstract We examine Si with and without additional SiO 2 thin film coating as a candidate for producing powerful 3rd 5th harmonics of Ti:sapphire laser pulses future spectroscopic application. Polarization rotation experiments have been performed at different incident angles to determine the origin generated strong polarization-dependency harmonic signals was observed. A simplified tensor formalism is introduced reproduce measurements high accuracy. Comparing O h symmetry bulk crystal, C 2v...
High-harmonic generation from solid films is an attractive method for converting infrared laser pulses to ultraviolet and vacuum wavelengths examining the using process. In this work, AlN thin grown on a sapphire substrate are studied. Below-band-gap third harmonics above-band-gap fifth were generated Ti:sapphire oscillator running at 800 nm. A strong enhancement of fifth-harmonic signal in forward direction was observed thicker 39 nm 100 compared thinner 8 17 films. For harmonic backward...