A5069276843- MXene and MAX Phase Materials
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Advancements in Battery Materials
- Advanced Battery Materials and Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Graphene research and applications
- Inorganic Chemistry and Materials
- Physics of Superconductivity and Magnetism
- Advanced Photocatalysis Techniques
- Ferroelectric and Piezoelectric Materials
- Advanced Condensed Matter Physics
- Membrane Separation and Gas Transport
- Magnetic and transport properties of perovskites and related materials
- Supercapacitor Materials and Fabrication
- Fuel Cells and Related Materials
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Chemical Synthesis and Characterization
- Molecular Junctions and Nanostructures
- GaN-based semiconductor devices and materials
- X-ray Diffraction in Crystallography
Shanghai Jiao Tong University
2022-2025
Center for Nanoscale Science and Technology
2024
Nankai University
2017-2023
The University of Texas at Dallas
2019
Shandong Jianzhu University
2019
It is commonly believed that the impact of top electrodes on ferroelectricity hafnium-based thin films due to strain engineering. However, several anomalies have occurred put existing theories in doubt. This work carries out a detailed study this issue using both theoretical and experimental approaches. The 10 nm Hf0.5Zr0.5O2 (HZO) are prepared by atomic layer deposition, three different capping (W/MO/ITO) deposited physical vapor deposition. electrical testing finds does not completely...
The hafnium-zirconium oxide (HZO) has been reported to be a promising candidate for low-power VLSI logic and memory applications. However, the demand high processing temperatures above 500 °C keeps it away from Back-End-of-Line (BEOL) process. Many reports have explored various methods facilitate formation of orthorhombic phases at lower temperatures, but these typically resulted in low remnant polarization ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Monolayers of metal trihalide MX<sub>3</sub>can feasibly be exfoliated from their bulk materials and they have large band gaps.
Exploiting two-dimensional (2D) metallic electrodes with high energy density and fast rate performance is crucial in rechargeable ion batteries. Herein, the electronic properties of 2D monolayer Ta2CS2 its potential as electrode candidate Li+, Na+, K+, Ca2+ batteries have been examined by utilizing first-principles calculations. The exfoliation feasible owing to small cleavage 0.64 J/m2 thermodynamical stability. Ta2CS2–metal atom complexes are energetically favorable through examining...
In this letter, a dual Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /Hf xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr (HZO) stack structure ferroelectric (FE) capacitor was designed and fabricated. It is found that the dielectric (DE) thin film at middle position of FE HZO films could apparently affect behaviors oxygen vacancies DE/FE interface electric field...
A dielectric material with a higher permittivity and lower leakage is required to meet the demands of three-dimensional (3D) dynamic random access memory (DRAM). Current morphotropic phase boundary (MPB) behavior exhibits but relatively high leakage. In this work, we propose feasible approach achieve MPB low by charge balance effect in doped HfO2-ZrO2 superlattice system. Our first-principles calculations reveal that synergy doping oxygen vacancies can transition barriers between polar...
Complementary field-effect transistor technology enhances integration density and reduces power consumption by vertically stacking n-MOS p-MOS transistors. However, the three-dimensional (3D) architecture poses challenges in threshold voltage control when depositing metal with distinct work function (WF) for gates. Using first-principles calculations, we explore wide-range WF modulation (3.20–5.25 eV) of defective TiN widely used industry 3D integration, enabling its application both n-...
The metal–semiconductor contact resistivity has become a severe challenge for three-dimensional (3D) integration. In this work, starting from the physical origin, we propose that charge redistribution is an effective strategy decreasing Schottky barrier height (SBH), subsequently leading to reduction in resistivity. Guided by perspective, first-principles calculations are utilized investigate effect of series metal dopants on SBH NiSi/Si system. ΦBe values can be reduced 0.27, 0.28, and 0.22...
The explosive growth in data-centric computing driven by artificial intelligence (AI) and big data has surpassed the capabilities of traditional von Neumann architecture. architectural separation memory units results substantial energy consumption, latency, additional hardware expenses. Therefore, a novel paradigm with low power consumption high parallelism is urgently needed. One promising solution to address wall challenge capacitor-based computing-in-memory (CIM). In this article, we...
Controlling oxygen deficiencies is essential for the development of novel chemical and physical properties such as high-Tc superconductivity low-dimensional magnetic phenomena. Among reduction methods, topochemical reactions using metal hydrides (e.g., CaH2) are known most powerful method to obtain highly reduced oxides including Nd0.8Sr0.2NiO2 superconductor, though there some limitations competition with oxyhydrides. Here we demonstrate that electrochemical protonation combined thermal...
The recent discovery of ferroelectric properties in HfO2 has sparked significant interest the fields nonvolatile memory and neuromorphic computing. Yet, as device scaling approaches sub-nanometer dimensions, leakage currents present a formidable challenge. While tungsten (W) electrodes are favored over traditional TiN for their superior strain interface engineering capabilities, they significantly hampered by issues. In this study, we elucidate positive feedback mechanism attributable to W...
Since the discovery of ferroelectric switching in hafnium-based thin films, this family materials has garnered significant attention. However, their higher coercive field not only constrains endurance performance but also escalates power consumption during polarization switching, rendering them incompatible with logic circuits. In work, we have successfully reduced HZO films to 0.8 MV/cm by introducing TiO2 interface layers. When compared samples, demonstrates a 30% reduction under same...
The band structures of two-monolayer Bi(110) films on black phosphorus substrates are studied using angle-resolved photoemission spectroscopy. Within the gap bulk phosphorus, electronic states near Fermi level dominated by film. dispersions revealed our data suggest that orientation film is aligned with substrate. strongly deviate from calculations free-standing film, suggesting substrate can significantly affect in Our show there no non-trivial grown substrates.
Doping is an effective strategy to modulate the electronic states of a semiconductor and improve its relevant device performance. Here, we propose realistic monolayer two-dimensional solid electrolyte material YBr3 implement carrier doping on MoS2. The stabilities, effect, structures Li-, Na-, K-, Ca-, F-doped MoS2 through based MoS2/YBr3 heterostructure have been explored by utilizing first-principles calculations. insertion layer improves stabilities effect in making as n-type or p-type...
Two-dimensional MX<sub>3</sub> materials with intrinsic atomic pores are proposed as ideal solid electrolytes in ultrafast ionic and energy storage devices.
Despite the extensive research on HfO2-based thin films, ferroelectric orthorhombic phase formation remains unclear. This work proposes a physical picture throughout entire annealing process to describe transition. Subsequently, evolution at various doping and temperatures is illustrated based kinetic model formalized from classical nucleation theory. It found that of depends not only modest concentration but also thermal activation t-to-o transition provided by sufficient temperature. In...
Compared with solid solution (SS) Hf0.5Zr0.5O2, HfO2–ZrO2 superlattice (SL) ferroelectric films exhibit enhanced endurance and reduced leakage. However, so far, the underlying physical mechanism is still missing. In this work, first-principle calculations reveal that superior reliability arises from precise control in spatial profile of oxygen vacancy stacked structure SL which vacancies (Vo) different formation energies energy profiles Zr- Hf-layers. Vo have tendency to migrate its...
The conventional approach to exploring suitable dielectrics for future logic and memory devices relies on first-principle calculations, which are expensive time-consuming. In this work, we adopt a data-driven machine learning (ML)-based build model predicting these properties. By incorporating structural information into the input descriptors, achieve record-high accuracy in dielectric constant, with coefficients of determination (R2) 0.886 root mean square error (RMSE) 0.083. Additionally,...
A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe2 field-effect transistor (FET). The custom-designed monolayer consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by at either the surface channel or h-BN capping layer achieve "1" "0", respectively. Bistability in significantly improved cap with density functional theory (DFT) calculations showing...