This paper presents the design and measurements of a 32-Gb/s differential-input differential-output transimpedance amplifier (TIA) employed in dual polarization integrated coherent receivers for 100-Gb Ethernet. A circuit technique is shown that uses replica TIA to stabilize operating point two shunt-feedback input stages as well cancel dc part complementary currents balances their offset. The can be operated modes, an automatic gain control mode retain good total harmonic distortion (THD)...

The design methodology and circuit implementation of a transimpedance (TI) amplifier (TIA) featuring low averaged input-referred current noise density without compromising the TIA bandwidth (BW) are presented. technology role in key performance metrics is also discussed verified by means two analogous designs implemented different 130-nm SiGe:C BiCMOS processes from IHP, SG13S with fT/fmax = 250/340 GHz SG13G2 300/500 GHz. Both TIAs adopt fully differential linear architecture three stages:...

This letter presents a wideband 240-GHz direct-conversion receiver manufactured in 130-nm SiGe:C BiCMOS technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> =300/500 GHz. A mixer-first is implemented, new dc offset cancellation loop architecture to compensate for the mixer offsets and biasing purposes. transimpedance amplifier utilized as load mixer, optimized maximize...

In this paper, a linear driver for optical modulators in 0.13-μm SiGe:C BiCMOS technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 300/500 GHz is presented. The design implemented following distributed amplifier topology differential manner. features small-signal gain 12.5 dB and 3-dB bandwidth 90 delivers maximum output amplitude 4 V...

This paper presents a high-integration miniaturized dielectric spectroscopy system for sensing the change of permittivity at 240 GHz in SiGe BiCMOS technology. The sensor features transducer with resonator to perform bandpass frequency response, whose complex value <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$S_{21}$ </tex-math></inline-formula> is varied sample under test. variation can be detected and...

Liquid−liquid equilibrium (LLE) data were measured for four binary systems containing sulfolane and alkanes (pentane, hexane, heptane, octane) over the temperature range around 300 K to near upper critical solution (UCST) using circulation-type equipment with an view cell. The compositions of both alkane-rich sulfolane-rich phases analyzed by on-line gas chromatography. liquid−liquid correlated nonrandom two-liquid (NRTL) model temperature-dependent parameters. NRTL good accuracy.

Abstract This work presents a fully differential wideband and low power 240 GHz multiplier-by-8 chain, manufactured in IHP's 130 nm SiGe:C BiCMOS technology with f T / max = 300/500 GHz. A single ended 30 input signal is multiplied by 8 using Gilbert cell-based quadrupler doubler, then amplified 3-stage cascode amplifier. To achieve wide bandwidth optimize for consumption, the budget has been designed order to operate frequency multipliers output amplifier saturation. With this architecture...

Asymptotic twistor space 𝒯 is a 4-complex-dimensional Kähler manifold (of signature ++−−) which can be constructed from an asymptotically flat space–time containing gravitational radiation. The properties of this structure are investigated, the metric being particular type, arising scalar Σ with special homogeneity properties. components curvature Kαβγδ found explicitly in terms asymptotic Weyl space–time. When radiation present, ≠0, whereas for stationary field Kαβγδ=0. ’’Ricci-flat’’...

This work presents a fully-differential wideband and low power 240 GHz multiplier-by-8 chain, manufactured in 130 nm SiGe:C BiCMOS technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 300/500 GHz. A 30 input signal is multiplied by 8 using Gilbert cell based quadrupler doubler then amplified 3-stage cascode amplifier. To achieve wide bandwidth optimize for...

A broadband low-noise amplifier with transimpedance (TI) feedback implemented in a 130-nm SiGe:C BiCMOS technology f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> of 300 GHz is presented. The circuit provides 22-dB gain and 75-GHz bandwidth while dissipating only 95 mW power, achieving against dc power efficiency (GBW/P xmlns:xlink="http://www.w3.org/1999/xlink">dc</sub> ) 9.9 GHz/mW. Measured noise figure (NF) 4 dB until 26.5 GHz,...

We demonstrated a silicon photonics-wireless interface integrated circuit (IC) realized in 0.25- μ m SiGe bipolar complementary metal-oxide-semiconductor technology, which converts 850-nm optical nonreturn-to-zero data into 60-GHz binary phase-shift keying wireless data. A transmission of 1.6 Gb/s 60 GHz using the IC is successfully with error-free operation achieved at 6-dBm input power.

This paper proposes a compact and efficient frequency quadrupler based on single Gilbert cell which converts 30 GHz input directly into 120 GHz. It consists of spiral Marchand edge coupled balun, core an output buffer. The core, is conventionally utilized as doubler, here to generate strong fourth harmonic by maximizing the nonlinearity transconductance stage in order mix third with fundamental component switching quad. usage multiplication enables achieve high power efficiency wide...

This paper presents an 8-channel bidirectional 60 GHz beamformer in a SiGe:C 130 nm BiCMOS technology, with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> = 250/340GHz. The consists of RF switches, LNAs, PAs, vector modulators, passive dividers / combiners and integrated SPI controller. On wafer measurements results show that the has OP1dB 0dBm T...

Liquid−liquid equlilibrium (LLE) data were measured for four binary systems containing N-formylmorpholine and alkanes (i.e. pentane, hexane, heptane, octane) over the temperature range 298 K to 413 using circulation type equipment with an equilibrium view cell. The compositions of both light heavy phases analyzed by on-line gas chromatography. mutual solubility increased as all these systems. liquid−liquid correlated NRTL UNIQUAC equations temperature-dependent parameters. Both models...

Monolithically integrated electro-optical transmitters fabricated in a 0.25 μm SiGe:C BiCMOS electronic-photonic circuit (EPIC) technology with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> =190 GHz are presented. The modules based on the co-design and integration of segmented depletion-type Si Mach-Zehnder modulator multichannel driver amplifiers. Two driving approaches their performance trade-offs discussed: linear one, direct...

We present two types of Si photonics-wireless interface (PWI) integrated circuits (ICs) realized in standard technology. Our PWI ICs convert optical signals into radio-frequency (RF) for downlink remote antenna units fiber-wireless networks. Characterization and modeling avalanche photodetectors (APDs) fabricated different technologies are carried out used IC design. A 5-GHz RF-over-fiber composed APD, preamplifier, power amplifier (PA) is 0.18-μm CMOS technology its performance verified by...

Stacked power amplifiers (PAs) have gained a lot of attention recently because increased output through equal distribution voltage swing among the stacked transistors. However, commonly employed PA design techniques, such as waveform engineering or harmonic tuning, often suffer in configuration, and enhancement power-added efficiency (PAE) remains poor. This letter analyzes feasibility tuning techniques applied to amplifiers. An analysis is presented show how at affects optimization...

A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The with on-chip stacked inductors and LO, RF baluns fabricated in 0.25-¿m SiGe:C BiCMOS technology. achieves conversion gain of 4 ± 1.5 dB 5 1 upper lower sideband, respectively, frequency range from 53 to 64 GHz. LO-to-RF isolation higher than 30 dB. has IF bandwidth GHz, the output-referred 1-dB compression point -9.5 dBm. It occupies a chip area 0.46 mm × consumes 10 mA supply voltage 2.5 V.

A differential linear TIA implemented in a 130 nm SiGe: C BiCMOS technology with ft/fmax/BVcEo of 300 GHz/500 GHz/1.7 V is presented. It features bandwidth 60 GHz, 62.5 dBO transimpedance gain and 5.46 pA/√Hz averaged input-referred current noise density, while dissipating 85 mW DC power. The measured THD better than 3% for ~ 450 mVppd output swing input 400 μApp. Clear NRZ eye diagrams up to 56 Gb/s, as well PAM-4 30 GBd are also reported. To the author's best knowledge, this design...

We demonstrate a 60-GHz fiber-wireless downlink using balanced subharmonic optoelectronic mixer based on silicon avalanche photodiode (APD) pair fabricated with standard 0.25-μm bipolar complementary metal-oxide-semiconductor technology. Conversion efficiency of this new type is 11 dB better than that the previously reported single APD mixer. achieve transmission 25-Mb/s 32 quadrature-amplitude modulation data minimum error-vector magnitude 2.4%.

This work reports on the development of SiGe-BiCMOS technologies for mm-wave and THz high frequency applications. We present state-of-the-art performances different SiGe heterojunction bipolar transistor (SiGe-HBT) developments as well evolution complex BiCMOS technologies. With respect to technology generations high-speed processes at IHP we discuss selected device modifications SiGe-HBT achieve a towards 0.5 regime. show difference high-frequency performance with maximum achievable transit...

Liquid−liquid equilibrium (LLE) data were measured for three binary systems containing N-formylmorpholine and cycloalkanes (cyclopentane, cyclohexane, cyclooctane) over the temperature a circulation type instrument with an view cell. The compositions of both cycloalkane-rich N-formylmorpholine-rich phases analyzed by on-line gas chromatography. liquid−liquid correlated NRTL UNIQUAC equations using temperature-dependent parameters. fitted experimental equilibria good precision, although clear...

Liquid−liquid equilibrium (LLE) data were measured for two binary systems containing sulfolane and cycloalkanes (cyclohexane cyclooctane) over the temperature range around 300 K to near upper critical solution (UCST) using circulation-type equipment with an view cell. The compositions of both cycloalkane-rich sulfolane-rich phases analyzed by on-line gas chromatography. liquid−liquid correlated NRTL UNIQUAC models temperature-dependent parameters. correlate experimental well.

A mixed-mode high-speed binary phase-shift keying (BPSK) demodulator for IEEE802.15.3c mm-wave wireless personal area network (WPAN) application is realized with 0.18 mum CMOS process. The core consumes 23.4 mW from 1.8 V power supply while the chip 165 times 110 PMZ. power-consumption less than that of conventional BPSK demodulators and chip-size smaller. proposed circuit verified by 1-meter 60-GHz link tests 1-Gb/s data.