Zeeshan Najam Khan

ORCID: 0000-0001-9438-7784
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About
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Research Areas
  • Semiconductor materials and devices
  • Semiconductor materials and interfaces
  • Advancements in Semiconductor Devices and Circuit Design
  • Synthesis and biological activity
  • Cavitation Phenomena in Pumps
  • Hydraulic and Pneumatic Systems
  • Advanced Nanomaterials in Catalysis
  • Electrical Contact Performance and Analysis
  • Nanoparticles: synthesis and applications
  • Ferroelectric and Negative Capacitance Devices
  • Natural Antidiabetic Agents Studies
  • Carbohydrate Chemistry and Synthesis
  • Magneto-Optical Properties and Applications
  • Magnetic Field Sensors Techniques
  • Gold and Silver Nanoparticles Synthesis and Applications

International Islamic University, Islamabad
2016-2019

COMSATS University Islamabad
2016-2019

Abbottabad University of Science and Technology
2019

National University of Sciences and Technology
2018

International Center for Chemical and Biological Sciences
2011

New derivatives of quinoline (CAS 91-22-5, Z-1) were synthesized and their potential therapeutical significance structure-activity relationship tested. The brine shrimp bioassay was carried out to study in vitro cytotoxicity, besides, also antimicrobial, antifungal cardiovascular activities investigated. Some structures showed a high degree activity on the isolated rabbit jejunum. Extensive spectroscopic techniques such as EIMS, FABMS, peak matching MS, UV, IR <sup>1</sup>Η NMR employed...

10.1055/s-0031-1300313 article EN Arzneimittelforschung 2011-12-27

In designing a hydropower plant, the design of turbine type depends on head and water flow. Researchers suggest that Axial/Propeller turbines can perform efficiently in lower heads because their high specific speeds, Francis medium to medium/high with discharge speeds whereas Pelton low speeds. this paper output performance Axial/ Propeller, are designed, analyzed compared using TURBNPRO software for existing Jamshill Turen More HPP. The site 117m 305 m³/s. feasibility recommends 4 vertical...

10.71146/kjmr162 article EN 2024-12-26

Metal Oxide Semiconductor (MOS) capacitors (MOSCAP) have been instrumental in making CMOS nano-electronics realized for back-to-back technology nodes. High-k gate stacks including the desirable metal processing and its integration into remain an active research area projecting solution to address requirements of roadmaps. Screening, selection deposition high-k dielectrics, post-deposition thermal processing, choice structure post-metal annealing are important parameters optimize process...

10.1371/journal.pone.0161736 article EN cc-by PLoS ONE 2016-08-29

A combination of two powerful techniques, namely, charge deep level transient spectroscopy and spectroscopic ellipsometry is employed on atomic layer deposited Si-metal oxide semiconductor capacitors (MOSCAPs) to investigate the energy efficiency physical process. Ultra-thin TiN/HfSiO acted as gate-dielectric stack Si substrate was carefully subjected rapid thermal processing subsequent measurements determine behaviour charges electro-optical characteristics. Some key parameters such trap...

10.1051/epjap/2018180104 article EN The European Physical Journal Applied Physics 2018-07-01

Silver (Ag) nanoparticles (NPs) are synthesized and characterized by a low-cost chemical reduction method. (Ag NPs) have pre-occupied the consideration of scientific community due to their wide range functions, utility industrial applications, particularly in fields sensing technologies medicine (particularly efficiency against microbes, ability healing wound anti-inflammatory properties). Ag NPs fabrication X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive (EDX)...

10.48084/etasr.2450 article EN Engineering Technology & Applied Science Research 2019-04-10

Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability electrodes is established through current density versus voltage ( J - V ), resistance temperature R T and...

10.1155/2016/3740517 article EN cc-by Advances in Materials Science and Engineering 2016-01-01

The paper is composed of distinct reviews on various fabrication technologies the CMOS family and characterization MOS capacitors. initial part article essentially presents a systemic review an already conducted work different such as Si MOSFET, SiGe HBT, InP HBT. Device circuit-level performance for broadband tuned millimetre-wave applications discussed in detail relative to underlying technologies. comparison made metrics 180 nm, 130 90 nm n-MOSFET devices HBTs. In latter study,...

10.1155/2018/2497352 article EN Journal of Nanomaterials 2018-10-18

High voltage transmission lines are the fundamental element in order to transfer electricity from power plant/grid consumers. The frequency, current and key figures sustain absolute quality of transmission, maintaining such high performance requires smart solutions equipment like Current Transformer (CT) &amp; Potential (PT). This proposed work enlightens an inception monitor by using pyro-sensors, machine learning (ML) techniques artificial intelligence (AI). Using pyro-sensors around...

10.51846/vol4iss2pp94-99 article EN Pakistan Journal of Engineering and Technology 2021-06-28
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