A5101867992- Advanced Thermoelectric Materials and Devices
- Thermal properties of materials
- Chalcogenide Semiconductor Thin Films
- 2D Materials and Applications
- Topological Materials and Phenomena
- Perovskite Materials and Applications
- Thermal Expansion and Ionic Conductivity
- Quantum Dots Synthesis And Properties
- Heusler alloys: electronic and magnetic properties
- Graphene research and applications
- Thermal Radiation and Cooling Technologies
- Phase-change materials and chalcogenides
- Electronic and Structural Properties of Oxides
- Advanced Condensed Matter Physics
- Advanced Semiconductor Detectors and Materials
- MXene and MAX Phase Materials
- Electrocatalysts for Energy Conversion
- Magnetic and transport properties of perovskites and related materials
- Magnetic Properties and Applications
- Perfectionism, Procrastination, Anxiety Studies
- Magnetic Properties and Synthesis of Ferrites
- Satellite Communication Systems
- Machine Learning in Materials Science
- Advanced battery technologies research
- Advancements in Battery Materials
Chongqing University
2021-2025
University of Electronic Science and Technology of China
2024
Waseda University
2022-2023
National Institute for Materials Science
2022-2023
Yunnan University
2023
Wuhan University
2018-2022
Materials Science & Engineering
2021-2022
UNSW Sydney
2021-2022
Guangzhou University
2020
Xiangtan Electric Manufacturing Group (China)
2019
Abstract All‐inorganic CsPbX 3 (X = Cl, Br, I, or mixed halides) perovskite quantum dots (QDs) exhibit tunable optical bandgaps and narrow emission peaks, which have received worldwide interest in the field of both photovoltaics (PVs) light‐emitting diodes (LEDs). Herein, it is reported a discovery that CsPbI QD solar cell can simultaneously deliver high PV performance intense electroluminescence. In specific, multifunctional film fabricated through simple yet efficient solid‐state‐ligand...
Magnesium-based materials have been regarded as promising candidates for large-scale, high-efficiency thermoelectric applications, owing to their excellent dimensionless figure of merit, high abundance, and low cost. In this review, we comprehensively summarize the recent advances Mg-based thermoelectrics, including Mg2X (X = Si, Ge, Sn), Mg3(Sb,Bi)2, α-MgAgSb, from both material device level. Their electrical thermal transport properties are first elucidated based on crystallographic...
Quasi-2D semiconductors have garnered immense research interest for next-generation electronics and thermoelectrics due to their unique structural, mechanical, transport properties. However, most quasi-2D experimentally synthesized so far relatively low carrier mobility, preventing the achievement of exceptional power output. To break through this obstacle, a route is proposed based on crystal symmetry arguments facilitate charge semiconductors, in which horizontal mirror found vanish...
Thermoelectric materials are typically highly degenerate semiconductors, which require high carrier concentration. However, the efficiency of conventional doping by replacing host atoms with alien ones is restricted solubility limit, and, more unfavorably, such a method likely to cause strong charge-carrier scattering at ambient temperature, leading deteriorated electrical performance. Here, an unconventional strategy proposed, where small trace used stabilize cation vacancies in Cu3 SbSe4...
Abstract Layer‐structured GeSb 2 Te 4 is a promising thermoelectric candidate, while its anisotropy of thermal and electrical transport properties still not clear. In this study, Ge 1– x Sb single crystals are grown by Bridgman method, their anisotropic systematically investigated. Lower conductivity higher Seebeck coefficient observed in the c ‐axis due to effective mass direction. Intrinsically low lattice also weak chemical bonding strong anharmonicity proved density functional theory...
Structural defects are ubiquitous for polycrystalline perovskite films, compromising device performance and stability. Herein, a universal method is developed to overcome this issue by incorporating halide quantum dots (QDs) into films. CsPbBr3 QDs deposited on four types of films (CsPbBr3 , CsPbIBr2 CsPbBrI2 MAPbI3 ) the interactions triggered annealing. The ions in released thin passivate defects, concurrently hydrophobic ligands self-assemble film surfaces grain boundaries reduce defect...
Metallic 1T-phase MoS2 exhibits superior hydrogen evolution reaction (HER) performance than natural 2H-phase owing to its higher electrical conductivity and abundance of active sites. However, the reported 1T-MoS2 catalysts usually suffer from extreme instability, which results in quick phase transformation at ambient conditions. Herein, we present a facile approach engineer by introducing intercalated hydrazine. Interestingly, as-synthesized 1T-dominant sample demonstrates excellent...
Abstract The distinctive properties of topological semimetals, including linear band dispersion and compensated electron‐hole carriers, have positioned these materials at the forefront research in power generation solid‐state cooling due to their remarkable magneto‐thermoelectric performance. In this work, transverse thermoelectric characteristics semimetal NbAs 2 are studied. Specifically, under a magnetic field 9 T, Nernst coefficient displays unsaturated trend, reaching peak 600 µV K −1...
Mg3Sb2 has attracted intensive attention as a typical Zintl-type thermoelectric material. Despite the exceptional performance in n-type Mg3Sb2, dimensionless figure of merit (zT) p-type remains lower than 1, which is mainly attributed to its inferior electrical properties. Herein, we synergistically optimize properties materials via codoping Cd and Ag, were synthesized by high-energy ball milling combined with hot pressing. It found that doping not only increases carrier mobility but also...
Multiple-band degeneracy has been widely recognized to be beneficial for high thermoelectric performance. Here, we discover that the p-type Dirac bands with lower synergistically produce a higher Seebeck coefficient and electrical conductivity in topological semimetal BaAgBi. The anomalous transport phenomenon intrinsically originated from asymmetric electronic structures: (i) complete near Fermi level facilitate strong energy-dependent hole relaxation time; (ii) presence of additional...
Abstract A recent discovery of high-performance Mg 3 Sb 2 has ignited tremendous research activities in searching for novel Zintl-phase compounds as promising thermoelectric materials. Herein, a series planar XCuSb (X = Ca, Sr, Ba) materials are developed by vacuum induction melting. All these exhibit high carrier mobilities and intrinsic low lattice thermal conductivities (below 1 W·m −1 ·K at 1010 K), resulting peak p-type zT values 0.14, 0.30, 0.48 CaCuSb, SrCuSb, BaCuSb, respectively. By...
Abstract Thermoelectric energy conversion technology is considered as one of the most promising solutions for recovering waste heat generated by fossil fuel combustion. As typical types thermoelectric materials in middle and high‐temperature range (500–900 K), binary IV‐VI (IV = Ge, Sn, Pb; VI Se, Te) compounds are extensively studied. Lately, obtained high‐performance solid between I‐V‐VI 2 (I Li, Na, K, Ag, Cu; V Sb, Bi; S, have brought those complex chalcogenides back to central point...
AgBiS 2 alloying combining with Ge doping facilitates the band convergence and suppresses phonon transport, leading to a competitive zT of 1.6 in SnTe.
Abstract Spin‐orbit coupling (SOC) induced nontrivial bandgap and complex Fermi surface has been considered to be profitable for thermoelectrics, which, however, is generally appreciable only in heavy elements, thereby detrimental practical application. In this study, the SOC‐driven extraordinary thermoelectric performance a light 2D material Fe₂S₂ demonstrated via first‐principles calculations. The abnormally strong SOC, by electron correlation through 3 d orbitals polarization,...
The thermoelectric conversion efficiency <italic>η</italic> in the Bi<sub>2</sub>O<sub>2</sub>S monolayer (bilayer) has been enhanced by 75% (42%) through dimensionality reduction.