Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type NWs has been demonstrated for first time. The produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. pulse is generated tip contacts stretched side (positive piezoelectric potential side) of NW. In contrast, n-type NW produces negative AFM tip, and compressed (negative reference to theoretical simulation, these...

Vertically aligned ZnO−ZnS heterojunction nanowire (NW) arrays were synthesized by thermal evaporation in a tube furnace under controlled conditions. Both ZnO and ZnS are of wurtzite structure, the axial heterojunctions formed epitaxial growth on with an orientation relationship [0001]ZnO//[0001]ZnS. Vertical NW have been obtained selectively etching arrays. Cathodoluminescence measurements show emissions at 509 547 nm, respectively. types applied to convert mechanical energy into...

Catalyst-free p-n homojunction ZnO nanowire (NW) arrays in which the phosphorus (P) and zinc (Zn) served as p- n-type dopants, respectively, have been synthesized for first time by a controlled situ doping process fabricating efficient ultraviolet light-emitting devices. The transition region defined width P atoms gradually occupying Zn sites along growth direction can be narrowed down to sub-50 nm. cathodoluminescence emission peak at 340 nm emitted from ZnO:Zn NW is likely due...

Intercrossed ZnS nanostructures doped with Ga (ZnS:Ga nanowalls) have been synthesized in high yield from mixed powders a vacuum furnace. ZnS:Ga nanowalls were grown vertically on the substrate size range of several micrometers and thickness down to ∼15 nm very rough edges. Due surface area distinctive morphology nanowalls, photocatalytic activity photoresponse show superior properties compared films. The increased conductivity metal−semiconductor−metal (Ag−ZnS:Ga nanowalls−Ag) Schottky...

Free-standing single-crystal NiSi2 nanowires (NWs) were synthesized on Ni foil with a simple vapor transport method. The growth of previously elusive Si-rich silicide NWs was achieved the addition NiCl2 powders in front substrate upstream. presence gas enhanced condensation Si and suppressed supply atoms subsequent reactions. As maintain low resistivity, can carry very high currents, possess excellent field emission properties, shall lead to significant advantages fabrication nanodevices.

Abstract In this study we measured the degrees to which Schottky barrier heights (SBHs) are lowered in ZnO nanowire (NW) devices under illumination with UV light. We I–V characteristics of confirm that is an n-type semiconductor and on/off ratio approximately 10 4 . From temperature-dependent measurements obtained a SBH 0.661 eV for NW device dark. The photosensitivity at power density 3 μW/cm 2 was 9186%. Variations account superior variations were due coupled mechanism adsorption...

Heterostructure engineering stands out as a potent strategy for advancing photocatalytic H 2 production. In the present study, various ratios of 1T/2H‐MoSe are synthesized by modulating quantity reducing agent. Notably, sample characterized highest 1T phase content exhibits lowest charge transfer resistance and superior absorption visible light. Subsequently, MoSe is incorporated with CdZnS to form heterostructures. Remarkably, production rate at 6.4 mmol g −1 h sample, surpassing that...

Persistent challenges in the nanofabrication of optoelectronic memory elements with ready size‐scalability, multibit data storage, and ultralow optical writing energy have limited progress toward construction storage/buffering high‐density photonic‐electronic circuits. Here, a programmable nanowire (NW) is described that operates an [ca. 180 aJ bit −1 (ca. 330 photons )] low standby power consumption (<1 pW) at room temperature. In this system, photoionized charged defects behave as...

Shining light on a semiconductor can create electron-hole pairs---the well known basis of all photovoltaic cells. However, the processes behind photogeneration and recombination pairs remain unclear at nanoscale, where Coulombic attraction becomes quite strong. The authors use FET structures to control surface electric field study charge separation in photoexcited ZnO nanowires Their results aid our understanding physics responses phototransistors photosensors, quantum efficiencies solar...

The mechanisms of threshold voltage shift evolution MoS₂ FETs after electron beam irradiation were demonstrated experimentally for the first time.

In this study p-type ZnO nanorod (NR) arrays were grown using a low-temperature hydrothermal method in the presence of various concentrations Sb doping solution. X-ray photoelectron spectroscopy revealed atomic percentages and chemical states dopant atoms NR arrays. Photoluminescence electrical measurements confirmed characteristics Sb-doped Sequential growth n- p-ZnO was then implemented to form p-n nanojunction The photovoltaic properties devices investigated under 365 nm UV light;...

The ionic screening effect plays an important role in determining the fundamental surface properties within liquid–semiconductor interfaces. In this study, we investigated characteristics of low-frequency drain current noise liquid-gated nanowire (NW) field transistors (FETs) to obtain physical insight into on fluctuation. When NW FET was operated close gate voltage corresponding maximum transconductance, magnitude for exposed a low-ionic-strength buffer (0.001 M) approximately 70% greater...

Coulomb energy is essential to the charging of a nanometer-scale trap in oxide metal-oxide-semiconductor system. Traditionally calculation was performed on basis an interfacelike trap. In this paper, we present experimental evidence from 1.7-nm oxide: Substantial enhancements due existence deeper oxide. Other corroborating achieved multiphonon theory, which can adequately elucidate measured capture and emission kinetics. The corresponding configuration coordinate diagrams are established. We...

We fabricate and measure a single-walled carbon nanotube transistor having liquid-gate electrode. The ratio value of Ion∕Ioff is as high 104, indicating the presence semiconducting channel. A passivation layer over source/drain electrode greatly suppresses leakage by about three orders magnitude. channel currents are noticeably distinct between two liquid samples: distilled water aqueous solution (1×10−4M NaCl). This biological sensing ability attributed to different electrical double-layer...

Low-frequency noise measurement in process tensile-strained n-channel metal-oxide-semiconductor field-effect transistors yields the density of interface states, exhibiting a decreasing trend while channel width. This finding corroborates group Pb centers caused by lattice mismatch at (100) Si-SiO2 as origin underlying states. The inverse narrow width effect appears to be insignificant, substantially confirming validity measurement. present experiment therefore points enhancement tensile...

We observe a sequence of two-level random telegraph signals (RTSs) in the drain/source current 1.7nm gate oxide silicon metal-oxide-semiconductor field-effect transistor. The RTS magnitude is transformed into apparent Debye length around negatively charged trap. achieve excellent reproduction data (40 down to 5nm). This leads quantified area spanned by dominant conductive percolation paths underlying two-dimensional electron gas (2DEG). find that most 2DEG inversion recovered largest...

The prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Although many types HBV diagnosis detection methods are available, some technical challenges, such as the high cost or lack practical feasibility, need overcome. In this study, polycrystalline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically...

Trace of protic gases can alter the conductivity polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic have no on electrical parameters. proposed mechanism is due to surface grain boundary poly-Si NW. direct evidence obtained from comparison between single- and parameters are varied according relative humidity levels. Nevertheless, water molecules be removed by vacuum indicating that it physical absorption surface. As a result, NW FET has potential reusable...

The influences of UV light to graphene for ZnO nanowire growth were discussed.

On–off switching behaviors or two-level random telegraph signals (RTS) are measured in the low voltage (−1.40 V<VG<−0.88 V) edge direct tunneling currents ultrathin gate stack (10 Å oxide+10 nitride) n-channel metal-oxide-semiconductor field-effect transistors. The plausible origin is process-induced defects terms of localized thinning (or equivalently conductive filament). In such extrinsic case, current trapping–detrapping theories can adequately elucidate data, particularly...

In this paper we describe the selective growth of ZnO nanorods (NRs) on top hydrophobic Si NR arrays. The periodic arrays, prepared through electroless chemical etching and HF treatment, functioned as substrates. Droplets containing seeds could be positioned causing to deposit selectively upon them, with n-ZnO NR/p-Si array heterojunctions ultimately forming after hydrothermal NRs. Because compensation for difference in refractive index between air substrate, arrays exhibited excellent...

Abstract Atomically thin layered 2D semiconductors have inspired intense interest in building hybrid liquid–semiconductor electronic systems for next‐generation biological/chemical sensing applications. There remains, however, a lack of understanding the electrical characteristics materials aqueous environments and, thereby, much useful information advancing development such emerging sensor systems. In this study, effects on field‐effect electron mobility ( µ FE ) monolayer molybdenum...

In this study Ga-doped cadmium sulfide (CdS) nanowires (NWs) were grown through chemical vapor deposition. The carrier conductivities of the CdS NWs improved after incorporation Ga; moreover, increased upon increasing amount Ga source. Using a cation exchange method, these served as source material for preparation Cu2S-CdS p-n heterostructured NWs. short-circuit current, open-circuit voltage, fill factor, and power conversion efficiency best-performing NW photovoltaic device 0.152 nA, 0.245...