A5018110245- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Photovoltaic System Optimization Techniques
- solar cell performance optimization
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Industrial Vision Systems and Defect Detection
- Nanowire Synthesis and Applications
- CCD and CMOS Imaging Sensors
- Advanced Semiconductor Detectors and Materials
- Chalcogenide Semiconductor Thin Films
- Photonic and Optical Devices
- Electron and X-Ray Spectroscopy Techniques
- Infrared Target Detection Methodologies
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Electromagnetic wave absorption materials
- Aluminum Alloys Composites Properties
- Optical and Acousto-Optic Technologies
- Photonic Crystals and Applications
- Advanced Optical Sensing Technologies
- Perovskite Materials and Applications
UNSW Sydney
2015-2024
Macquarie University
2022-2023
The University of Sydney
2016
Anzac Research Institute
2015
Abstract To operate photovoltaic power plants at maximum capacity, it is desirable to identify cell or module failures in the field earliest possible stage. Currently used inspection methods cannot detect many of electronic defects that can be revealed with luminescence‐based techniques. In this work, photoluminescence images are acquired using sun as sole illumination source by separating weak luminescence signal from much stronger ambient sunlight signal. This done an appropriate choice...
Abstract Fast camera‐based luminescence‐imaging measurements on perovskite solar cells are presented. The fundamental correlation between the luminescence intensity and open circuit voltage predicted by generalised Planck law is confirmed, enabling various quantitative methods for detection of efficiency‐limiting defects to be applied this new cell structure. Interstinegly, it found that valid only light‐soaked devices. Copyright © 2015 John Wiley & Sons, Ltd.
This paper discusses the influence of different solar cell loss mechanisms at low light intensities and presents a simple method for analysis performance under various illumination below 1 sun. Suns-PL Suns - V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> are used to measure intensity-dependent pseudo I-V curves symmetric test structures finished silicon cells in an intensity range between sun 10-3 suns. The parameters from compared...
Abstract Monitoring the performance of solar modules in a photovoltaic system is critical order to understand health system. Existing methods for field inspection have limited capability detecting various electronic defects that can, however, be identified with luminescence‐based methods. A contactless outdoor photoluminescence‐imaging based measurement method uses sun as excitation source was presented our earlier work. This paper extends previous work and presents two unique applications...
Finger interruptions or finger breaks are a common occurrence in screen printed solar cell manufacturing and may result decreased performance due to an increase effective series resistance. Identification of is typically accomplished using electroluminescence imaging. This paper demonstrates contactless detection line scan photoluminescence Modeling used highlight the difference between images conventional luminescence imaging methods. Significant benefits over identify presented: images,...
ABSTRACT A proof of concept study for a method determining quantitative shunt values in silicon solar cells from photoluminescence images is presented. The based on interpretation the luminescence intensity around local or recombination‐active defect terms extracted current. theoretical relationship between signal and current derived. Experimental results specifically prepared test structures show good agreement with known resistance values. data diffused wafers are effect front...
The surface recombination at metallized surfaces of a solar cell is significant interest for process development, considering the limiting effect such has on efficiency. This difficult to measure accurately, because enhanced metal contacts causes an inhomogeneous minority carrier profile, which limits viability conventional photoconductance-based measurements. In this study, photoluminescence-based system used injection-dependent effective lifetime full area samples. Several techniques...
Photoluminescence imaging is a fast and powerful spatially resolved characterization technique, commonly used for silicon wafers solar cells. In conventional measurements, homogeneous illumination across the sample. this paper, we present photoluminescence setup that enables inhomogeneous with arbitrary patterns to determine various parameters of cells cell precursors. To demonstrate strength proposed imaging, set proof-of-concept measurements have been conducted; these include contactless...
This paper investigates the use of emitter windows with varying passivation layers in an intensity range between 1 and 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> suns. The results are compared a cleaved sample without windows. It is found that nondiffused region outside very important to reduce recombination. surface schemes investigated three most commonly used for solar cells: aluminum oxide, silicon dioxide, nitride. oxide...
Bulk lifetime and doping images on silicon bricks can be obtained by spectral luminescence intensity ratio analysis as established recently. Here, we report calibrated full spectrum band-to-band measurements taken the flat side faces of mono- multicrystalline at room temperature. Our results verify physical modeling used for imaging. We further investigate three fitting methods employing spectrally resolved photoluminescence data to obtain bulk information.
Abstract In devices with intrinsic amorphous silicon layer on a crystalline substrate, the light absorbed in can be weakly electronically coupled into base. Such carrier injection has previously been reported from measurements finished containing stacks of and doped layers. Here, we use spectral response photoluminescence, contactless approach, to investigate this significantly simpler structures. such devices, effect absorption front measured by internal quantum efficiency. A highly...
The electrical performance a solar cell is determined from direct measurements of the current voltage relationship, while so-called implied current-voltage are often performed to estimate partially processed samples. Implied commonly obtained quasi steady state photoconductance and photoluminescence measurements, where inferred average excess carrier density. As will be shown here, this approach can problematic due presence carriers that do not contribute terminal voltage. These referred as...
In photoconductance (PC) based carrier lifetime measurement, artificially high values at low-to-medium injection levels are often observed because of the presence minority traps in sample. this paper, we demonstrate that n-type Czochralski silicon a transient regime under typical quasi-steady-state measurement condition. The trap-associated apparent such is different from one steady-state condition; thus, should be analyzed according to their actual We and subsequently propose method extract...
Outdoor Photoluminescence imaging of crystalline silicon photovoltaic modules in full daylight via contactless switching the operating point was recently demonstrated. That previous method requires an optical modulator to be placed on at least two positions each module under test and or more separate sets image pairs need acquired combined into a merged PL image.Here we demonstrate modified approach which enables outdoor acquisition entire from just one pair. The still without any...
Illumination intensity dependent open-circuit voltage measurements, commonly known as Suns-V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> , are often used to measure the current-voltage characteristic of a solar cell without impact series resistance. Deviations at high illumination levels between measurements and contactless such injection-dependent photoluminescence, have previously been reported. These deviations analyzed in detail...
Defect parameter solution surface is a widely accepted method to determine the values of energy level and carrier capture cross sections defect from injection-dependent lifetime measurements. Results come recognition intersection points, which can be difficult when doping or temperature range measurement narrow. In this paper, we introduce new extract parameters spectroscopy data. After linearization Shockley-Read-Hall (SRH) equation, problem transformed into mathematical form, solved by...
The external quantum efficiency is routinely measured to determine the carrier collection probability of solar cells as a function illumination wavelength. common method used perform these measurements requires fully metalized device such that short circuit current can be under monochromatic illumination. This paper demonstrates extraction relative data from open photoluminescence in contactless fashion. Good agreement observed between photoluminescence-based technique and traditional for...
Luminescence imaging of Silicon solar cells is typically performed with a silicon CCD, which poor absorber luminescence (900-1300 nm). This leads to phenomenon referred as photon smearing in the where incident on one pixel may be absorbed another. makes image blurry and quantitative analysis this data inaccurate. Also resolution, contrast, sharpness are reduced at features such grain boundaries, sample edges. An already established method recovering original signal CCD deconvolve Point...
Optical switching of the electrical operating point individual crystalline silicon modules has previously been demonstrated as an elegant noncontact method for outdoor photoluminescence image acquisition in full daylight, with important advantage that no modifications to system wiring are required. Herein, a modified approach imaging large photovoltaic arrays, enabled by simultaneous optical all within series‐connected string, is demonstrated. This improved simpler and allows significantly...
Photoluminescence imaging techniques have recently been extended to silicon bricks for early production quality control and electronic characterisation in photovoltaics microelectronics. This contribution reviews the state of art this new method which is fundamentally based on spectral luminescence analyses. We present highly resolved bulk lifetime images that can be rapidly extracted from side faces directionally solidified or Czochralski grown bricks. It discussed how detailed physical...
With the remarkable advances in semiconductor processing, devices such as solar cells have fewer and defects that impact their performance. Determination of currently limit device performance, predominantly by increasing charge carrier recombination rate, has become more challenging with standard methods like deep level transient spectroscopy. To circumvent this limitation, photovoltaic community is attempting to use measurement rates identify remaining defects, approach intrinsically...