Zhanpeng Wang

ORCID: 0000-0002-0178-4703
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About
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Research Areas
  • Advanced Memory and Neural Computing
  • Perovskite Materials and Applications
  • Security and Verification in Computing
  • Conducting polymers and applications
  • Icing and De-icing Technologies
  • Photoreceptor and optogenetics research
  • Advanced Malware Detection Techniques
  • Heat Transfer and Optimization
  • Neural Networks and Reservoir Computing
  • Ferroelectric and Negative Capacitance Devices
  • Surface Modification and Superhydrophobicity
  • Optical properties and cooling technologies in crystalline materials
  • Solid State Laser Technologies
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Cloud Data Security Solutions
  • Electric Power System Optimization
  • Bacteriophages and microbial interactions
  • Software Engineering Research
  • Electronic and Structural Properties of Oxides
  • Gas Sensing Nanomaterials and Sensors
  • Advanced biosensing and bioanalysis techniques
  • 2D Materials and Applications
  • Semiconductor materials and devices
  • Neuroscience and Neural Engineering
  • Neural Networks and Applications

Shihezi University
2024-2025

Chinese Academy of Sciences
2019-2025

Shanghai Institute of Optics and Fine Mechanics
2024-2025

Guangdong Medical College
2024

Jilin Agricultural University
2024

Chongqing University
2024

Anhui University
2024

Xi'an Technological University
2023-2024

University of Chinese Academy of Sciences
2019-2024

Beijing Institute of Graphic Communication
2024

Inspired by the biological neuromorphic system, which exhibits a high degree of connectivity to process huge amounts information, photonic memory is expected pave way overcome von Neumann bottleneck for nonconventional computing. Here, flash based on all-inorganic CsPbBr3 perovskite quantum dots (QDs) demonstrated. The heterostructure formed between QDs and semiconductor layer serves as basis optically programmable electrically erasable characteristics device. Furthermore, synapse functions...

10.1002/adma.201802883 article EN Advanced Materials 2018-07-31

Abstract The in‐depth understanding of ions' generation and movement inside all‐inorganic perovskite quantum dots (CsPbBr 3 QDs), which may lead to a paradigm break through the conventional von Neumann bottleneck, is strictly limited. Here, it shown that formation annihilation metal conductive filaments Br − ion vacancy driven by an external electric field light irradiation can pronounced resistive‐switching effects. Verified field‐emission scanning electron microscopy as well...

10.1002/adma.201800327 article EN Advanced Materials 2018-05-21

Due to the rapid development of artificial intelligence (AI) and internet things (IoTs), neuromorphic computing hardware security are becoming more important. The volatile memristors, which feature spontaneous decay device conductance, own distinct combination high similarity biological neurons synapses unique physical mechanisms. They excellent candidates for mimicking synaptic functions ideal randomness source entropy hardware‐based security. Herein, recent advances memristors in devices,...

10.1002/aisy.202000055 article EN cc-by Advanced Intelligent Systems 2020-07-08

It is desirable to imitate synaptic functionality break through the memory wall in traditional von Neumann architecture. Modulating heterosynaptic plasticity between pre- and postneurons by another modulatory interneuron ensures computing system display more complicated functions. Optoelectronic devices facilitate inspiration for high-performance artificial systems. Nevertheless, utilization of near-infrared (NIR) irradiation act as a terminal emulation has not yet been realized. Here, an...

10.1002/smll.201805431 article EN Small 2019-01-17

2D materials with intriguing properties have been widely used in optoelectronics. However, electronic devices suffered from structural damage due to the ultrathin and uncontrolled defects at interfaces upon metallization, which hindered development of reliable devices. Here, a damage-free Au/h-BN/Au memristor is reported using clean, water-assisted metal transfer approach by physically assembling Au electrodes onto layered h-BN minimized undesired interfacial defects. The memristors...

10.1002/smll.202106253 article EN Small 2022-01-27

Reservoir computing (RC) is a computational architecture capable of efficiently processing temporal information, which allows low-cost hardware implementation. However, the previously reported memristor-based RC mostly utilized binarized data sets to reduce difficulty signal memristor, inevitably induces distortion certain extent, leading poor network performance. Here, we report on system in fully memristive based solution-processed perovskite memristors. The memristor exhibits 10000...

10.1021/acsnano.2c09569 article EN ACS Nano 2022-12-15

Abstract Memristor‐based reservoir computing systems represent an attractive approach in processing the time‐series information with a low training cost, range of fields from finance to engineering. Previous investigations have identified charming potential organic devices for next‐generation memory devices. However, structural inhomogeneity and wide energy bandgap most polymers usually lead low‐yield high operation power microelectronic devices, that permit their further application...

10.1002/adfm.202204721 article EN Advanced Functional Materials 2022-08-25

The no-PL emissive Cs 4 PbBr 6 nanocrystals transform into highly PL CsPbBr 3 upon the addition of water, and over time, they grow microrods with lasing-emitting properties.

10.1039/d5tc00088b article EN Journal of Materials Chemistry C 2025-01-01

As one of the five basic components in a modern computer system, memory plays key role data storage while Von Neumann architecture still occupies principal position digital era. With rapid development portable electronic devices, non‐volatile memories are great importance human's daily life. High‐performance devices highly demanded, and novel materials applied to flash resistive random access (ReRAM) have been widely investigated. The functionalities can be broadened with semiconductor...

10.1002/pssr.201800644 article EN physica status solidi (RRL) - Rapid Research Letters 2019-02-07

Core–shell semiconductor quantum dots (QDs) are one of the biggest nanotechnology successes so far. In particular, type-I QDs with straddling band offset possess ability to enhance charge carriers capturing which is useful for memory application. Here, core–shell QD-based bipolar resistive switching (RS) anomalous multiple SET and RESET processes was demonstrated. The synergy competition between space limited current conduction (arising from trapping in potential well QDs) electrochemical...

10.1021/acs.nanolett.0c02227 article EN Nano Letters 2020-06-24

A memory device is demonstrated based on g-C<sub>3</sub>N<sub>4</sub> nanosheets with a non-volatile behavior and bipolar switching characteristic.

10.1039/c9tc02841b article EN Journal of Materials Chemistry C 2019-01-01

Extreme blue 435 nm emission, 97% PLQY CsPbBr 3 nanoplates and up to 150 Mbps optical wireless communication data transmission rate.

10.1039/d4tc00151f article EN Journal of Materials Chemistry C 2024-01-01

The performance of a perovskite memristor was improved by integrating tip-shape contact to produce more intense electric field for regulating the growth conductive filaments.

10.1039/d1tc04164a article EN Journal of Materials Chemistry C 2021-01-01

10.1016/j.ijheatmasstransfer.2022.123741 article EN International Journal of Heat and Mass Transfer 2022-12-12

In article number 2003610, Ye Zhou, Su-Ting Han, and co-workers provide a comprehensive overview on the development of neuromorphic engineering from biological nervous systems to spike-based hardware computing platforms. Spiking neural networks based artificial synapses neurons simulate architecture information processing brain for highly efficient are reviewed.

10.1002/adma.202070392 article EN Advanced Materials 2020-12-01

As a competitive candidate for artificial neurons, memristors have become the focus of intense research owing to their intrinsic ion migration tunability, enabling an authentic implementation biomimicry. However, they still suffer from variability issues due 3-D uncontrollable filament dynamics in amorphous medium and modeling switching underlying growth rupture is under investigation. In this work, we present volatile that exhibit desired characteristics neuromorphic computing with low...

10.1109/ted.2022.3206170 article EN IEEE Transactions on Electron Devices 2022-09-26
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