A5091472758- GaN-based semiconductor devices and materials
- 3D IC and TSV technologies
- Electronic Packaging and Soldering Technologies
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Advanced Sensor and Energy Harvesting Materials
- Quantum Dots Synthesis And Properties
- Semiconductor Lasers and Optical Devices
- Thin-Film Transistor Technologies
- Force Microscopy Techniques and Applications
- Adhesion, Friction, and Surface Interactions
- Copper Interconnects and Reliability
- Viral Infections and Outbreaks Research
- Healthcare Systems and Reforms
- Mechanical and Optical Resonators
- Trauma and Emergency Care Studies
- Heat and Mass Transfer in Porous Media
- Metallurgical Processes and Thermodynamics
- Photonic Crystals and Applications
- Chronic Disease Management Strategies
- Geomechanics and Mining Engineering
- Advanced MEMS and NEMS Technologies
- Vector-Borne Animal Diseases
- Superconductivity in MgB2 and Alloys
- Advanced Welding Techniques Analysis
Shandong University
2025
State Key Laboratory of High Performance Complex Manufacturing
2016-2023
Central South University
2014-2023
San’an Optoelectronics (China)
2023
Peking University
2021
Peking University Stomatological Hospital
2021
China International Engineering Design & Research Institute
2014
To derive the impact of chip size reduction on optical efficiency in micro-LED array panels, blue InGaN/GaN LEDs, which consist 21×7 arrays (60 ppi display) with different mesa sizes sapphire substrates, are designed and fabricated this study. Changing area is first proposed to investigate luminous (cd/A) screen. The current a peak wavelength 450 nm reaches up 14.29 cd/A for biggest pixel 50µm×60µm 12.25 15µm×25µm chip, delivering high-level efficiencies LED research field. mechanisms...
The laser lift-off (LLO) process was employed to fabricate a monochromatic GaN-based green micro-light-emitting-diode (Micro-LED) 14 × arrays grown on pattern sapphire substrate (PSS) in this research. A new experimental phenomenon and internal mechanism of some epitaxial residues the top sidewalls PSS protrusion after stripping were deeply discussed. In addition, reasons for formation micro lattice dislocation layer crystal caused by also analyzed. leakage current array devices LLO 200...
To develop integrated circuit (IC) test of wafer-level packaging, the electromechanical model microprobe testing process and IC final system packaging based on arrays are first proposed. An is derived, which analysis collected real-time force electrical data using designed sensing system, voltage measuring loading system. It found that contact resistance a quartic function with respect to force, has nonlinear hysteretic damping characteristics displacement speed microprobe. The approximately...
In order to increase the amount of waste heat recovery, cooling process a layer loaded sinter cooler was simulated. Aiming determine exactly flow and temperature distributions in cooler, several high accuracy numerical models were coupled together simulate complex multidimensional physical phenomenon. Different particle sizes sieved different layers groups simulation experiments designed performed. An orthogonal optimisation experiment evaluate influence parameters (i.e. inlet area wall...
A full-color display consisting of red and green photoluminescence cadmium-free quantum dots (QDs) as the color conversion material excited by a 68×68 blue micro-LED flip chip array mounted on an active-matrix driving board was completed in this study. The QD photoresist (QDPR) lithography technology reported detail, it has been proven to be stable process route. suitable thickness 12±1µm QDPR black matrix proposed reduce light cross talk between different sub-pixels. common filter 1–2 µm...
The removal of a sapphire substrate by laser lift-off, photoluminescence detection technology, and the luminous efficiency size-dependent devices are very hot issues for Micro-LED display, which is thoroughly studied in this paper. mechanism thermal decomposition organic adhesive layer after irradiation analyzed detail, temperature 450 °C solved established one-dimensional model highly consistent with inherent PI material. spectral intensity PL higher, peak wavelength red-shifted about 2 nm...
In modern society, electronic equipment continues to develop in the direction of miniaturization and multifunction. order meet this requirement, packaging technology has gradually evolved from “2-D planar packaging” “3-D packaging.” The realization flip-chip bonding process thermal cycle reliability 3-D stacked structure are discussed article. First, stack three substrates a small size chip together, machine was used vertically chips <inline-formula> <tex-math...
The technical of realizing full-color display by monochromatic integrated 100 × blue Micro-LED array exciting InP quantum dot color conversion layer is researched in this study. Using photolithography technology to prepare film on a separate glass cover has the advantages better accuracy and resolution. optimum thickness 12 μ m photoresist (QDPR) was verified 10 black matrix (BM) proposed reduce light crosstalk between different sub-pixels. filter 1 ± 0.4 made successfully QDPR glass, which...
In order to understand high-G shock reliability of the 3-D integrated structure microsystem (3-D-ISM), it is studied by finite element method (FEM). First, a numerical model 3-D-ISM established for simulation. Then, appropriate elements are used discretize geometry, and certain initial boundary conditions enforced. Acceleration up 20000 G applied simulation process. The results showed that filler can significantly improve 3-D-ISM. And filling with filler, under different loading types...
To avoid the damage of microprobe to wafer, magnetorheological (MR) damping loading was used. The problem low repeated positioning solved by limiting relative rotation between probe and cylinder. experimental results show that performance similar cuboid cylinder damper. repetition accuracy more than circular damper two times. Then, electrical properties with were tested under different currents, velocities, displacements, contact resistances fluctuated in range 0.85–1.4 <inline-formula...
In order to study the electromigration characteristics of butting solder joint in microelectronic packaging devices, this paper designs a Cu/Solder/Cu experiment observe change microstructure interface by scanning electron microscopy (SEM). It is found that evolvement IMC at anode follows parabolic growth rule under condition electric current density for 1.0×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> A/cm...
Blue and green InGaN/GaNµLED arrays with different LED chip sizes were fabricated tested in IVL system. As the size reduces, current density at peak efficiency increases gradually for both blue samples. The of smaller µLED is lower than that bigger one.
We adopted a novel method to achieve high-density microbump connection through microsilver paste sintering at low temperature quickly with the help of ultrasonic. Sliver its unique performance has potential as an alternative Pb-free solder and this been generally accepted. However, it not applied in field bump interconnection. The usual problem is time-consuming, porous, wettability. Many experiments were carried out two copper plates, focusing on study mechanism. conduct our research manner...
The referenced article [ Appl. Opt. 59 , 11112 ( 2020 ) APOPAI 0003-6935 10.1364/AO.412267 ] has been retracted by the author.
The dipping process of flip-chip is a major factor that influences the quality product in Microelectronics packaging. It not acceptable insufficient or excessive flux attaches to bumps after dipping. To remove these problems effectively, experimental bed has been established. And whole was recorded by high-speed camera. Dipping speed, depth and time all affect results under different conditions can be obtained changing several parameters on LabVIEW user interface. In order obtain variation...
Blue InGaN/GaN Micro‐LED arrays based on silicon and sapphire substrates were fabricated respectively. The LED chips with 12.8 µm pixel pitch share a common n contactor in 960*540 array. driving current for single chip 8 mesa reaches as large 20 mA, which indicates its density is much larger than that of LEDs even high power lighting application. Meanwhile, the reverse leakage 8µm size under ‐5V bias below 10 pA, falls within range normal level LED. heat pressing bonding process between...
Blue and green InGaN/GaN μLED arrays with different LED chip sizes were fabricated tested in IVL system. As the size reduces, current density at peak efficiency increases gradually for both blue samples. The of smaller is lower than that bigger one.
A detailed theoretical derivation and calculation method of the difference coefficient between a light distribution pattern 30×20µm2 green micro-LED array Lambert source is proposed first in this paper, to best our knowledge, which establishes an accurate relationship external quantum efficiency current (cd/A). The variation capacitance with voltage wavelength blueshift illustrated by carrier recombination mechanism. reaches 132.5 cd/A for 60×50µm2 121.7 25×15µm2 arrays, mechanism caused...