A5089391872- Ga2O3 and related materials
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Toxin Mechanisms and Immunotoxins
- Combustion and Detonation Processes
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- High voltage insulation and dielectric phenomena
- Ovarian cancer diagnosis and treatment
- Lightning and Electromagnetic Phenomena
- PARP inhibition in cancer therapy
- Network Security and Intrusion Detection
Xidian University
2023-2024
Shandong Academy of Agricultural Machinery Sciences
2024
This study evaluated maintenance treatment with niraparib, a potent inhibitor of poly(ADP-ribose) polymerase 1/2, in patients platinum-sensitive recurrent ovarian cancer.In this phase III, double-blind, placebo-controlled conducted at 30 centers China, adults cancer who had responded to their most recent platinum-containing chemotherapy were randomized 2 : 1 receive oral niraparib (300 mg/day) or matched placebo until disease progression unacceptable toxicity (NCT03705156). Following...
In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure. This E-mode Ga2O3 MOSFET featured highest VTH of 9.03 V and maximum current ID 70.0 mA/mm among reported lateral normally off MOSFETs. Meanwhile, breakdown voltage 834 V, specific on-resistance RON,sp 19.3 mΩ·cm2, sub-threshold swing SS 87 mV/dec were achieved simultaneously. addition, shifted only 9.9% after...
The simulation model of a depletion-mode (D-mode) β -Ga 2 O 3 metal–oxide–semiconductor field-effect transistor (MOSFET) is constructed by Silvaco ATLAS technology computer-aided design (TCAD) simulation, which employs an epitaxial drift layer grown on sapphire substrate. On this basis, the floating field plate (F-FP) structure based gate-pad-connected (P-FP) proposed to improve breakdown characteristics device, easy be prepared. working principle F-FP investigated with help device one F-FP....
In this paper, the radiation effect of gamma irradiation (60Co) on Au/Ni/β-Ga2O3 vertical Schottky barrier diodes (SBDs) was investigated for total doses about 1 Mrad (Si). The SBDs were characterized by current density–voltage (J–V) and capacitance–voltage (C–V) measurements. Compared with original β-Ga2O3 SBDs, it found that height Φb increases from 1.08 to 1.12 eV, ideality factor n decreases 1.07 1.02, specific on-resistance Ron,sp 3.34 2.95 mΩ·cm2 irradiated SBDs. addition, carrier...