A5068289289- Semiconductor materials and devices
- Advanced ceramic materials synthesis
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials
- Nuclear materials and radiation effects
- Ferroelectric and Negative Capacitance Devices
- Diamond and Carbon-based Materials Research
- X-ray Diffraction in Crystallography
- Electrical and Thermal Properties of Materials
- Advanced Surface Polishing Techniques
- Metal and Thin Film Mechanics
- Microwave Dielectric Ceramics Synthesis
University of Colorado Boulder
2017-2021
Abstract In‐situ flash experiments on rutile TiO 2 were performed at the synchrotron Brookhaven National Laboratory. Pair distribution function analysis of total X‐ray scattering measurements yielded mean‐square atomic displacements oxygen and titanium atoms during progression 3 stages flash. The are measured to be far greater for than atoms. These large may signal an “elastic softening” lattice, which, recently, has been predicted as a precursor onset
Abstract In situ X‐ray diffraction measurements at the Advanced Photon Source show that α‐Al 2 O 3 and MgAl 4 react nearly instantaneously completely, completely to form single‐phase high‐alumina spinel during voltage‐to‐current type of flash sintering experiments. The initial sample was constituted from powders , spinel, cubic 8 mol% Y ‐stabilized ZrO (8 YSZ ) mixed in equal volume fractions, alumina molar ratio being 1:1.5. Specimen temperature measured by thermal expansion platinum...
Abstract We develop an algorithm that relates the incubation time for flash initiation to workpiece velocity as it is pulled through stationary electrodes in a continuous sintering experiment. Experiments with whiteware green body sintered this way are compared model. A processing map when drawn at constant developed. The parameter space given by speed and current flowing workpiece. It distinguishes between regimes uniform inhomogeneous sintering. All experiments were carried out furnace...
Ultrathin Al2O3 atomic layer deposition (ALD) films with low pinhole density were fabricated using a deposit and etchback approach. This strategy was able to avoid the pinholes that originated during nonuniform nucleation of ALD films. In this method, an film deposited thickness greater than desired reduce number form more continuous film. Subsequently, etched back smaller thermal etching (ALE). The in resulting measured by percentage yield metal-insulator-metal (MIM) capacitors based on...
We present a new-generation Spatial ALD system that achieves oxide deposition rates of 2000 nm/h at ≤150°C, with tunable stress, refractive index, and low optical loss over conformal geometries.
This paper presents the first study of effect thermal atomic layer etching (ALE) on residual stress in suspended deposition (ALD) structures. Optical curvature measurements silicon wafers with varying thicknesses Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ALD polyimide were collected ex situ to obtain evolution film. Brownian motion micromachined resonators fabricated an...