- Acoustic Wave Resonator Technologies
- GaN-based semiconductor devices and materials
- Advanced MEMS and NEMS Technologies
- Mechanical and Optical Resonators
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Advanced Surface Polishing Techniques
- Magnetic and Electromagnetic Effects
- Electrohydrodynamics and Fluid Dynamics
- Microfluidic and Bio-sensing Technologies
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
University of Colorado Boulder
2014-2019
Hemispherical shell micro-resonators may be used as gyroscopes to potentially enable precision inertial navigation and guidance at low cost size. Such devices require a high degree of symmetry large quality factors (Q). Fabricating the from atomic layer deposition (ALD) facilitates through ALD's conformality surface roughness. To maximize Q, shells' geometry is optimized using finite element method (FEM) studies reduce thermoelastic dissipation anchor loss. The shells are fabricated by...
We report on the design, construction, and use of axisymmetric magnetic traps for levitating diamagnetic particles. The each consist two pole pieces passively driven by a neodymium iron boron (NdFeB) permanent magnet. field configuration between combined with earth’s gravitational forms 3D confining potential capable range substances, e.g., graphite powder, silica microspheres, gallium nitride (GaN) powder nanowires. Particles trap stably at atmosphere in high-vacuum periods up to weeks...
We report the use of optical Bragg scattering and homodyne interferometry to simultaneously measure all first order cantilever-mode mechanical resonance frequencies quality factors (Q) gallium nitride nanowires (GaN NWs) in periodic selected-area growth arrays. Hexagonal 2D arrays GaN NWs with pitch spacings 350–1100 nm were designed prepared allow 632.8 laser light. The studied have diameters ranging from 100 300 nm, lengths 3 10 μm, between 1 MHz, Q-values near 000 at K, Young's modulus...
This paper presents the first study of effect thermal atomic layer etching (ALE) on residual stress in suspended deposition (ALD) structures. Optical curvature measurements silicon wafers with varying thicknesses Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ALD polyimide were collected ex situ to obtain evolution film. Brownian motion micromachined resonators fabricated an...