A5101565037- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Ga2O3 and related materials
- Thermal and Kinetic Analysis
- Acoustic Wave Resonator Technologies
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- Chemical Thermodynamics and Molecular Structure
- Semiconductor materials and devices
- Quantum Dots Synthesis And Properties
- Gas Sensing Nanomaterials and Sensors
- Energetic Materials and Combustion
- Perovskite Materials and Applications
- 2D Materials and Applications
- Copper Interconnects and Reliability
- MXene and MAX Phase Materials
- Copper-based nanomaterials and applications
- Polymer crystallization and properties
- Chalcogenide Semiconductor Thin Films
- Conducting polymers and applications
- Organometallic Complex Synthesis and Catalysis
- Supercapacitor Materials and Fabrication
- Electronic and Structural Properties of Oxides
- Optical Coatings and Gratings
- Epoxy Resin Curing Processes
National Applied Research Laboratories
2014-2024
National Yunlin University of Science and Technology
2014-2022
Xi'an Polytechnic University
2022
National Yang Ming Chiao Tung University
2009-2021
National Chung Hsing University
2015
National Kaohsiung Marine University
2011
Taiwan Textile Research Institute
2007
Rutgers, The State University of New Jersey
1996-2006
University of Toronto
2006
National Taiwan Normal University
2005
Abstract Unidirectional water transport performance is vital for maintaining human thermal and wet comfort in the field of garment materials. In this work, a 3D orthogonal woven fabric (3DOWF) with excellent one‐way capacity mechanical properties developed via weaving plasma treatment. The 3DOWF consists polyester yarns (first layer), cotton (second viscose (third layer) successively enhanced absorption capacity. This allows droplets to penetrate spontaneously from hydrophobic layer...
Abstract In this study, epitaxial AlN films were deposited on 6” p-type Si(111) substrates through RF/DC magnetron sputtering with an RF bias and two N2/Ar flow rates. We discussed the effects of nitrogen rate microstructure crystal domains AlN/Si(111) at 800°C. The in-plane XRD TEM results showed that single-domain was epitaxially grown in a ratio 0.43. Also, relationships between film substrate determined to be AlN(0002)//Si(111) AlN[11-20]//Si[220]. leverage optimized process parameters...
The following study involved the utilization of dispersion polymerization to synthesize micron/nano-sized polystyrene (PS) spheres, which were then deposited onto a silicon substrate using floating assembly method form long-range monolayer. Subsequently, dry etching techniques utilized create subwavelength structures. adjustment stabilizer polyvinylpyrrolidone (PVP), together with changes in monomer concentration, yielded PS spheres ranging from 500 nm 5.6 μm diameter. These suspended...
Vertically aligned gallium nitride (GaN) nanorod arrays grown by the catalyst-free, self-organized method based on plasma-assisted molecular-beam epitaxy are shown to behave as subwavelength optical media with low effective refractive indices. In reflection spectra measured in entire visible spectral region, strong reflectivity modulations observed for all arrays, which attributed effects of Fabry-Pérot microcavities formed within optically flat air/nanorods and nanorods/substrate...
In x Al1-xN films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios structural, morphological, and optical properties films. Surface morphologies microstructure measured by atomic force microscopy, scanning electron X-ray diffraction (XRD), transmission microscopy (TEM), respectively. Optical all evaluated an ultraviolet/visible/infrared (UV/Vis/IR) reflection...
In this study, hexagonal AlN (h-AlN) thin films were grown on a two-dimensional (2D)-WS2/Al2O3 substrate by radio frequency–metalorganic molecular beam epitaxy at 800 °C. We examined the influence of various RF plasma powers synthesis and characterization AlN/WS2 heterostructures, as well their properties, for optoelectronic applications. In-plane grazing incidence X-ray diffraction results indicated that h-AlN 2D-WS2/Al2O3(0001) are oriented along (100) (110) planes, indicating epitaxial...
Inspired by the induced-fit mechanism in nature, we developed process of water-induced self-assembly (WISA) to make water an active substrate that regulates and function amphiphilic discotic molecules (ADMs). The ADM is isotropic liquid self-assembles only when contact with water. Characterization results indicate fits into hydrophilic core ADMs induces formation a hexagonal columnar phase (Colh), where each column contains hydrated artificial channel (AWC). AWCs are adaptive rather than...
To improve the omnidirectional light-harvesting in dye-sensitized solar cells (DSSCs), here we present a dandelion-like structure composed of ZnO hemispherical shells and nanorods. Uniformly distributed effectively suppress reflection over broadband region at incident angles up to 60°, greatly improving optical absorption DSSCs. In addition, modulating length nanorods controls characteristics This phenomenon is attributed degree periodicity structures. Cells with shorter rods exhibit high...
TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N2 ratio of about 10. At 700°C, the growth rate was approximately 0.05 μm/h. The structural and electrical properties characterized x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron (SEM), transmission (TEM), Hall measurements. For all deposition conditions, XRD results show that can be in an epitaxy cube-on-cube orientation relationship (001)TiN //...
Abstract Heteroepitaxial growth of non‐polar m ‐plane (10 $ \bar 1 0) ZnO has been demonstrated on (112) LaAlO 3 single crystal substrates using the pulsed laser deposition method. X‐ray diffraction, reflection high energy electron and cross‐sectional transmission microscopy with selected‐area have used to characterize structural properties deposited films. The epitaxial relationship between LAO is shown be ∥ , (11 2 ( 1) [0001] [ 10] . (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)