A5101514658- ZnO doping and properties
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Ga2O3 and related materials
- Diamond and Carbon-based Materials Research
- GaN-based semiconductor devices and materials
- Electronic and Structural Properties of Oxides
- Copper-based nanomaterials and applications
- Acoustic Wave Resonator Technologies
- Multiferroics and related materials
- Copper Interconnects and Reliability
- Gas Sensing Nanomaterials and Sensors
- Ferroelectric and Piezoelectric Materials
- Advanced materials and composites
- Integrated Circuits and Semiconductor Failure Analysis
- Force Microscopy Techniques and Applications
- Semiconductor materials and interfaces
- High-pressure geophysics and materials
- Transition Metal Oxide Nanomaterials
- Magnetic and transport properties of perovskites and related materials
- Semiconductor Quantum Structures and Devices
- Carbon Nanotubes in Composites
- Advanced Sensor and Energy Harvesting Materials
- Electron and X-Ray Spectroscopy Techniques
- Microstructure and mechanical properties
National Yang Ming Chiao Tung University
2013-2023
Wuhan University of Technology
2022
General Research Institute for Nonferrous Metals (China)
2014
Shangri-la Institute
2012
Chung Hua University
2008
National Science and Technology Council
1994-1995
National Tsing Hua University
1994
ITRI International
1992
The presence of a variety structural variants in BiFeO3 thin films give rise to exotic electric-field-induced responses and resulting electromechanical as large 5%. Using high-resolution X-ray diffraction scanning-probe-microscopy-based studies the numerous phases present at phase boundaries are identified an intermediate monoclinic phase, addition previously observed rhombohedral- tetragonal-like phases, is discovered.
The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of on conventional substrates with superior performance are constrained by trade-off between processing temperature device performance. Here, we propose an alternative strategy circumvent this issue via heteroepitaxial growth conducting oxides (TCO) mica substrate comparable that their rigid counterparts. With...
A new orthorhombic phase of the multiferroic BiFeO3 has been created via strain engineering by growing it on a NdScO(3)(110)(o) substrate. The tensile-strained is ferroelectric and antiferromagnetic at room temperature. combination nonlinear optical second harmonic generation piezoresponse force microscopy revealed that polarization in along in-plane {110}(pc) directions. In addition, corresponding rotation axis this was observed using x-ray linear dichroism.
We report a detailed study on the strain-driven phase transition between tetragonal-like and rhombohedral-like phases in epitaxial BiFeO${}_{3}$ (BFO) thin films which focuses their structural nature, thermodynamic stability, ferroelectric/piezoelectric properties. first show that phase, has large c/a ratio (\ensuremath{\sim}1.2), compressively strained BFO is thermodynamically more favorable at high temperature strain state (small thickness). also two monoclinic 150...
Abstract With the increasing demand for ocean resource exploitation, deep-sea exploration, and environmental protection, importance of underwater operation technologies has become more prominent. Traditional rigid robotic arms lack flexibility in complex environments, limiting their effectiveness diverse tasks. Flexible arms, with pliable structures, offer superior adaptability. However, influence geometric design on performance water-driven actuators remains unclear, hindering optimization....
Nucleation of diamond is great importance for its growth, and a detailed understanding the nucleation process is, therefore, desired many applications. The pretreatment substrate surface may impact initial growth period. This study demonstrates synthesis films by microwave plasma chemical vapor deposition on Pt/SiO2/Si substrate. Pt particles were deposited SiO2/Si at room temperature, whereas adamantane was seeded ultrasonic treatment. SiO2 behave as catalyst, which adsorb hydrocarbons from...
In x Al1-xN films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios structural, morphological, and optical properties films. Surface morphologies microstructure measured by atomic force microscopy, scanning electron X-ray diffraction (XRD), transmission microscopy (TEM), respectively. Optical all evaluated an ultraviolet/visible/infrared (UV/Vis/IR) reflection...
Nonpolar (112¯0) ZnO films were grown on LaAlO3 (001) single crystal substrates at temperature from 300 to 750 °C by pulsed laser deposition method. The examined using x-ray diffraction, reflection high energy electron and photoluminescence measurements for the crystallinity. surface morphology of atomic force microscopy exhibits L-shaped domains. Cross-sectional transmission with selected area diffraction reveals two types a-plane domains perpendicular each other in-plane orientation...
Extended defect reduction in GaN can be achieved via direct growth on stripe patterned (11¯02) r-plane sapphire substrates by metal organic chemical vapor deposition. The striped mesa is along [112¯0] with two etched sides {0001} and {11¯01} faces. grown both facets epitaxy exhibit different crystallographic relationships substrate which are (11¯02)sapphire‖(112¯0)GaN [112¯0]sapphire‖[1¯100]GaN, (0001)sapphire‖(0001)GaN respectively. dislocation densities significantly reduced through...
We reported optical properties of a-plane ZnO/ZnMgO multiple quantum wells (MQWs) structure grown by the pulse laser deposition system. The emission peak energy MQWs kept invariant in power-dependent photoluminescence (PL) measurement, indicating nonpolar characteristics due to lack built-in electric fields. Large exciton binding 68 meV was deduced and no apparent S-curve appeared temperature-dependent PL results, demonstrating less carrier localization effect MQWs. difference electronic...
Discharged energy properties of PbO–SrO–Na 2 O–Nb O 5 –SiO glass‐ceramics with crystallization time from 1 to 1000 min were investigated by measuring their hysteresis loops (described as quasi‐static method) and pulse‐discharge current‐time curves dynamic method). The results show the same trend for both methods: With increment time, discharged density increases gradually, while efficiency decreases. highest efficiencies obtained in sample min, which are 96.3% 82.4%, corresponding...
We have used nanoporous anodic aluminum oxide (AAO) as a template to fabricate amorphous carbon coated silicon nanotips by microwave plasma chemical vapor deposition (MPCVD). During the preparation of well-ordered AAO pore channel array, an underlying TiN layer was anodically oxidized well in late stage anodization, forming titanium nanomasks for Si nanotip fabrication. The were then transfer arrangement pattern array substrate etch MPCVD system and, therefore, produced. An thick situ...
The piezoresistive effect has shown a remarkable potential for mechanical sensor applications and been sought its excellent performance. A great attention was paid to the giant sensitivity delivered by silicon-based nanostructures. However, low thermal stability complicated fabrication process hinder their practical applications. To overcome these issues enhance functionalities, we envision substantial piezopotential in zinc oxide (ZnO)/muscovite (mica) heteroepitaxy system based on...
Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier was studied. A thin layer 40 nm sputtered on substrate before film metallization, judged from data X-ray diffraction (XRD), Auger electron spectroscopy (AES), and cross-sectional transmission microscopy (TEM), Cu/TaN films with were very stable without interfacial interaction up to 550/spl deg/C annealing; metallized thermally stressed at 300/spl deg/C. The devices showed little change in device characteristics...
Abstract High resolution transmission electron microscopy is used to study the atomic structure of a Σ7 grain boundary (Σ equal reciprocal fraction lattice sites in coincidence) Al2O3. This Al2O3 has misorientation [0111]/180°. The plane (0112)1∥(0112)2. Four possible unrelaxed structures can be constructed from constrained coincidence-sitelattice (CCSL) patterns. determined through-focal series high images and computer image simulation. A DSC dislocation was identified. Burgers vector this...
Diamond nucleation on unscratched Si surface is great importance for its growth, and detailed understanding of this process therefore desired many applications. The pretreatment the substrate may influence initial growth period. In study, diamond films have been synthesized adamantane-coated crystalline silicon {100} by microwave plasma chemical vapor deposition from a gaseous mixture methane hydrogen gases without application bias voltage to substrates. Prior adamantane coating, substrates...
Abstract Hexagonal, single‐crystalline, diamond nanoplatelets synthesized by microwave plasma (MP)CVD on Au‐Ge alloy and nanocrystalline (nc‐diamond) film substrates, respectively, are reported. On the nc‐diamond matrix, hexagonal can grow to a thickness of as little approximately 10 nm. The effects various processing parameters, such methane concentration, power, gas pressure, growth explored. High‐resolution transmission electron microscopy (HRTEM) reveals that contain multi‐parallel...
Abstract Heteroepitaxial growth of non‐polar m ‐plane (10 $ \bar 1 0) ZnO has been demonstrated on (112) LaAlO 3 single crystal substrates using the pulsed laser deposition method. X‐ray diffraction, reflection high energy electron and cross‐sectional transmission microscopy with selected‐area have used to characterize structural properties deposited films. The epitaxial relationship between LAO is shown be ∥ , (11 2 ( 1) [0001] [ 10] . (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Continuous diamond thin films can be grown on sapphire substrates by microwave plasma chemical vapor deposition utilizing a pretreatment of adamantane dip coating the substrate for enhanced nucleation.