Interventional catheters have been widely applied in diagnostics, therapeutics, and other biomedical areas. The complications caused by catheter-related bacterial infection, venous thrombosis, vascular abrasion become the main reasons for failure of interventional therapy. In this study, polyacrylamide/poly(acrylic acid) lubricating copolymer brushes were constructed on surface efficiently resisted adhesion blood components bacteria through hydration electrostatic repulsion effects. are...

The energy storage density of a Ba 0.4 Sr 0.6 TiO 3 ceramic with the addition 5–20 vol% glass was investigated. results show that improvement in glass‐added samples arises due to two factors: one is breakdown strength notably improved decrease porosity and reduction grain size pore other remnant polarization decreased. containing 5 additive by factor 2.4 compared pure .

A SiO2/Si substrate modified by an octadecyltrimethoxysilane (OTMS) self-assembled monolayer is used to obtain high-quality graphene devices with low intrinsic doping level. The carrier mobility can reach 47 000 cm2 V−1 s−1. findings will pave the way for approaching properties of supported graphene, elucidating scattering origins, and gaining a better understanding mechanism transport in graphene.

(100− x ) wt% Ba 0.4 Sr 0.6 TiO 3 − MgO composites (10≤ ≤30) were prepared using powder and nanosized (∼60 nm) by a solid‐state reaction. The energy storage density dielectric loss investigated for the purpose of potential application in pulse‐forming line. results show that /MgO exhibit notably enhanced low loss, compared with pure . enhancement is attributed to notable increase breakdown strength improvement constant stability regard electric field. In case =30, samples exhibited 33.1...

Na <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O-PbO-Nb O xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> - SiO glass-ceramic dielectrics and internal electrode structures were investigated to improve the general energy storage density of capacitors. This work was brought out by motivation elimination structural flaws pores remaining in at electrode/dielectric interfaces, which are main causes low dielectric strength traditional...

Zwitterionic polymer brushes are not a practical choice since their ionic response mechanisms unclear, despite great potential for surface antifouling modification. Therefore, atomic force microscopy and molecular dynamics simulations investigated the of electrical properties, hydration protein adhesion three types zwitterionic brushes. The PMPC (poly(2-methacryloyloxyethyl phosphorylcholine)) PSBMA (poly(sulfobetaine methacrylate)) in salt solution exhibits significant accumulation cations,...

Effects of Gd doping on band gap, offset, oxygen vacancies, and electrical properties amorphous HfO2 film have been studied. The results show that incorporation helps increase conduction offset minimum, reduce vacancies simultaneously. Kept at the same physical thickness 5 nm, Gd-doped gate dielectric has a leakage current density 9.0×10−4 A/cm2 1 V voltage, one half orders magnitude lower than pure HfO2. also enhances constant. capacitance equivalent thicknesses 0.98 nm 0.81 for films,...

Graphene field-effect transistors (GFETs) with different metal electrodes are fabricated to explore the contact characteristics. The resistance and spatial potential distribution along graphene/metal interface investigated. low-doped can be reversibly switched between "ohmic" "space-charge region limited" states. observed switching attributes highly reproducible stable, which provides a new avenue produce high-performance graphene memory devices. Detailed facts of importance specialist...

The performance of graphene field effect transistors (GFETs) strongly depends on the interface between sheets and underlying substrates. In this work, we report that an octadecyltrimethoxysilane (OTMS) SAM modified conventional SiO2/Si substrate can consistently enhance coronene-derived large-area FETs. improved transport properties in terms boosted carrier mobility (up to 10 700 ± 300 cm2 V–1 s–1), long mean free path, nearly vanished hysteretic behavior, remarkably low intrinsic doping...

Abstract We investigated the characteristics and mechanism of Pt/La 2 O 3 /Pt resistance switching memory with a set measurements. The La films were determined as nano‐poly‐crystalline (diameter nanocrystals 5–10 nm) by XRD HRTEM analysis. device exhibited excellent resistive properties, including low voltage (&lt;2 V), large low/high ratio (&gt;10 8 ), good cycling endurance property. conduction mecha‐ nisms revealed current–voltage characteristics, which are different in high states....

Rare earth doping is an important approach to improve the desired properties of high-k gate dielectric oxides. We have carried out a comprehensive theoretical investigation on phase stability, band gap, formation oxygen vacancies, and for Gd-doped HfO2. Our calculated results indicate that tetragonal more stable than monoclinic when Gd concentration greater 15.5%, which in good agreement with experimental observations. The dopant's geometric effect mainly responsible stability. enlarges gap...

LiMnxFe1-xPO4 (LMFP) materials, with their high energy density and excellent cycle stability, are promising cathode materials for electric vehicles other high-energy-density applications. However, the low lithium-ion diffusion coefficient and...

Discharged energy properties of PbO–SrO–Na 2 O–Nb O 5 –SiO glass‐ceramics with crystallization time from 1 to 1000 min were investigated by measuring their hysteresis loops (described as quasi‐static method) and pulse‐discharge current‐time curves dynamic method). The results show the same trend for both methods: With increment time, discharged density increases gradually, while efficiency decreases. highest efficiencies obtained in sample min, which are 96.3% 82.4%, corresponding...

Effects of rapid thermal annealing (RTA) at 950 °C for 5 s in N2 on structure and electrical properties Gd-doped HfO2 film deposited Si(100) substrates have been studied. RTA causes partial crystallization slight reduction band gap. Silicide appears the interfacial layer thickness interface increases. Keeping films about 3 nm, leakage current density is 3.81×10−5 A/cm2 1 V gate voltage without while that 8.50×10−2 with RTA. The permittivities are ∼14.8 ∼17.9 capacitance equivalent...

Rare earth doping is widely used to improve the desired properties of high-k dielectric oxides. However, whether rare can suppress formation oxygen vacancies still debated. By using first-principles calculations with generalized gradient approximation and more advanced hybrid functional, we have investigated structural electronic dopant-oxygen vacancy complexes in Gd-doped HfO2. Our indicate that Gd dopants interacting substantially shift up VO energy states towards conduction band edge....

In this paper, we use amorphous Gd2O3 as the switching layer for fabricated RRAM devices with novel high performance, excellent flexibility, and mechanical endurance properties potential candidate memory flexible electronics applications. The obtained Cu/Gd2O3/Pt on polyethylene terephthalate (PET) substrates show bipolar characteristics, low voltage operation (<2 V) long retention time (>106 s). No performance degradation occurs, stored information is not lost after device has been bent to...