A5001911529- Graphene research and applications
- 2D Materials and Applications
- Quantum and electron transport phenomena
- Physics of Superconductivity and Magnetism
- Topological Materials and Phenomena
- Advanced Condensed Matter Physics
- Multiferroics and related materials
- Molecular Junctions and Nanostructures
- Theoretical and Computational Physics
- Magnetic properties of thin films
- Carbon Nanotubes in Composites
- Graphene and Nanomaterials Applications
- MXene and MAX Phase Materials
- High-pressure geophysics and materials
- Iron-based superconductors research
- Nuclear and radioactivity studies
- Semiconductor materials and devices
- ZnO doping and properties
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Rare-earth and actinide compounds
- Fullerene Chemistry and Applications
- High-Velocity Impact and Material Behavior
- Graphite, nuclear technology, radiation studies
- Advancements in Semiconductor Devices and Circuit Design
Sungkyunkwan University
2019-2024
Indian Institute of Technology Jodhpur
2024
Centre for Development of Advanced Computing
2024
Birla Institute of Technology, Mesra
2024
Dr. Rajendra Prasad Central Agriculture University
2024
Central Agricultural University
2024
Indian Institute of Management Lucknow
2017-2021
Budapest University of Technology and Economics
2020
Hungarian Academy of Sciences
2020
Jawaharlal Nehru University
2012-2018
Band gap engineering offers tunable optical and electronic properties of semiconductors in the development efficient photovoltaic cells photocatalysts. Our study demonstrates band ZnO nanorods to develop a highly visible-light photocatalyst. We engineered by introducing core/shell geometry with Ag2S sensitizer as shell. Introduction evinces great promise for expanding light-harvesting range substantial suppression charge carrier recombination, which are supreme importance realm...
Strontium intercalation between van der Waals bonded layers of the topological insulator ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ is found to induce superconductivity with a maximum ${T}_{c}$ 2.9 K. Transport measurement on single crystal optimally doped sample ${\mathrm{Sr}}_{0.1}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ shows weak anisotropy $(\mathrm{\ensuremath{\Gamma}}\ensuremath{\sim}1.5)$ and an upper critical field ${H}_{c2}(0)$ equal 2.1 T for magnetic applied perpendicular $c$ axis sample....
The finite energy band-offset that appears between band structures of employed materials in a broken-gap heterojunction exhibits several interesting phenomena. Here, by employing black phosphorus (BP)/rhenium disulfide (ReS2 ) heterojunction, the tunability BP work function (Φ with variation flake thickness is exploited order to demonstrate BP-based can manifest diverse current-transport characteristics such as gate tunable rectifying p-n junction diodes, Esaki backward-rectifying and...
The broken-gap (type III) van der Waals heterojunction is of particular interest, as there no overlap between energy bands its two stacked materials. Despite several studies on straddling-gap I) and staggered-gap II) vdW heterojunctions, comprehensive understanding current transport optoelectronic effects in a type-III remains elusive. Here, we report gate-tunable rectifying characteristics black phosphorus (BP)/rhenium disulfide (ReS2) p-n diode. Current this was modeled using the Simmons...
Recently, multivalued logic (MVL) circuits have attracted tremendous interest due to their ability process more data by increasing the number of states rather than integration density. Here, we fabricate based on molybdenum telluride (MoTe2)/black phosphorus (BP) van der Waals heterojunctions with different structural phases MoTe2. Owing electrical properties 2H and mixed +1T′ MoTe2, tunable devices been realized. A circuit a BP field-effect transistor (FET) BP/MoTe2 (2H + 1T′)...
We demonstrate that phase transition and continuous symmetry breaking can happen in $2d$ Heisenberg ferromagnets with long range interaction violation of the Hohenberg-Mermin-Wagner theorem. This has been possible to achieve van der Waals ferromagnet ${\text{Fe}}_{3}{\text{GeTe}}_{2}$ due its exceptional tunability magnetic properties. argue variable critical exponent is a signature systems ordering, consistent recent results from density functional theory quantum Monte Carlo calculations.
We report on the superconducting gap and pairing symmetry in layered superconductor Bi4O4S3. The measurement of temperature dependence magnetic penetration depth was carried out using tunnel diode oscillator technique. It is observed that Bi4O4S3 a conventional s-wave type with fully developed gap. zero-temperature value energy Δ0 found to be 1.54 meV, corresponding ratio 2Δ0/kBTc = 7.2 which much higher than BCS 3.53. In range, superfluid density very well described by single model.
Abstract The reduced structural complexity of atomically thin amorphous carbons makes it suitable for semiconductor technology. Inherent challenges arise from transfer processes subsequent to growth on metallic substrates, posing significant the accurate characterization materials, thereby compromising reliability spectroscopic analysis. Here this work presents a novel approach: direct ultra‐thin carbon with tuned disorder dielectric substrate (SiO 2 /Si) using photochemical reaction and...
The superconductive transition of c-axis-oriented ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7}$ thin films, as characterized by measurements the temperature dependence magnetic penetration depth, is found to occur below Ginzburg-Landau mean-field transition. divergence depth at in good quantitative agreement with predictions a percolation model.
We report controlled doping in graphene monolayers through charge-transfer interaction by trapping selected organic molecules between and underneath substrates. Controllability has been demonstrated terms of shifts Raman peaks Dirac points monolayers. Under field effect transistor geometry, a shift the point to negative (positive) gate voltage region gives an inherent signature n- (p-)type as consequence graphene. The proximity near surface result is evidenced infrared spectroscopies....
Strontium intercalation between van der Waals bonded layers of topological insulator Bi2Se3 is found to induce superconductivity with a maximum Tc 2.9 K. Transport measurement on single crystal optimally doped sample Sr0.1Bi2Se3 shows weak anisotropy (1.5) and upper critical field Hc2(0) equals 2.1 T for magnetic applied per-pendicular c -axis the sample. The Ginzburg-Landau coherence lengths are Xi-ab = 15.3 {\AA} Xi_c 10.2 {\AA}. lower zero temperature penetration depth Lambda(0) estimated...
We report on the superconducting properties of indium-doped SnTe. SnTe has recently been explored as a topological crystalline insulator. Single crystals Sn0.5In0.5Te have synthesized by modified Bridgman method. Resistivity measurement performed in range 1.6–300 K shows metallic normal state with onset transition at . Bulk superconductivity also confirmed DC magnetization, AC susceptibility and rf penetration depth measurements. Zero-temperature upper critical field, lower coherence length,...
Dielectric screening of excitons in monolayer graphene has been evidenced by a shift excitonic peaks various dielectric environments. The scaling relationship <italic>E</italic><sub>b</sub> ∝ <italic>ε</italic><sup>−1.2</sup> also established.
We report on the synthesis and extensive characterization of layered Bi4O4S3 superconductor. This is optimally doped sample with Tc ~ 5.3 K out a series Bi6O4S4(SO4)1−x samples synthesized by solid state reaction. The was prepared towards establishing phase diagram transition temperature as function carrier concentration. crystal structure for shows different Bi–S–Bi bond angle compared to that parent phase. Scanning electron microscopy images show platelet-like morphology Bi4O4S3,...
High yield production of high quality graphene is essential for its application in electronics, optoelectronics and energy storage devices.
It is known that the experimental conditions and growth methods determine different carrier scatterings responsible for large variation of mobility in graphene monolayers. Here we present a systematic investigation on various possible scattering mechanisms limiting solid substrate, like SiO2. This has been by defect engineering monolayers obtained liquid phase exfoliation graphite polar non-polar solvents with dielectric constant varying from 2.5 to 64. Lattice defects have characterized...
We report electron-hole conduction asymmetry in monolayer graphene. Previously, it has been claimed that is due to imbalanced carrier injection from metallic electrodes. Here, we show contacts have negligible impact on asymmetric and may be either sample or device-dependent phenomena. Electrical measurements graphene based devices exhibit suppressed electron compared hole the presence of donor impurities which scatter electrons more efficiently. This can explained by relativistic nature...
The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit phenomena and applications. An important question in magnetism is ultimate antiferromagnetic layer thickness ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures observe exchange bias (EB) effect, which origin has been subject long-standing debate. Here, we report that EB effect maintained down atomic bilayer AFM FM (Fe3GeTe2)/AFM (CrPS4)...
Graphene layers with and without defects have been grown by chemically exfoliating graphite in organic solvents characterized different spectroscopic techniques. It has shown that can be controlled graphene while intercalating molecules graphite. The transfer characteristics of transistors fabricated on monolayers exfoliated using solvent low dielectric constant boiling point show almost no shift minimum conductivity point, i.e., Dirac indicating defect free pristine graphene.
The interplay between strong Coulomb interactions and kinetic energy leads to intricate many-body competing ground states owing quantum fluctuations in 2D electron hole gases. However, the simultaneous observation of critical phenomena both regimes remains elusive. Here, we utilize anisotropic black phosphorus (BP) show density-driven metal-insulator transition with a conductance ∼e2/h which highlights significant role regimes. We observe T-linear resistivity from deep metallic phase...