A5042820622- 2D Materials and Applications
- ZnO doping and properties
- Graphene research and applications
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Ion-surface interactions and analysis
- Topological Materials and Phenomena
- MXene and MAX Phase Materials
- Magnetic properties of thin films
- Perovskite Materials and Applications
- Surface and Thin Film Phenomena
- Plasma Diagnostics and Applications
- Nanowire Synthesis and Applications
- Polymer crystallization and properties
- Physics of Superconductivity and Magnetism
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Luminescence Properties of Advanced Materials
- Advanced Memory and Neural Computing
- High-pressure geophysics and materials
- Metal and Thin Film Mechanics
- Nonlinear Optical Materials Studies
- Transition Metal Oxide Nanomaterials
- Polymer Nanocomposite Synthesis and Irradiation
- Theoretical and Computational Physics
Government College University, Lahore
2014-2024
Sungkyunkwan University
2020-2023
Recently, multivalued logic (MVL) circuits have attracted tremendous interest due to their ability process more data by increasing the number of states rather than integration density. Here, we fabricate based on molybdenum telluride (MoTe2)/black phosphorus (BP) van der Waals heterojunctions with different structural phases MoTe2. Owing electrical properties 2H and mixed +1T′ MoTe2, tunable devices been realized. A circuit a BP field-effect transistor (FET) BP/MoTe2 (2H + 1T′)...
The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit phenomena and applications. An important question in magnetism is ultimate antiferromagnetic layer thickness ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures observe exchange bias (EB) effect, which origin has been subject long-standing debate. Here, we report that EB effect maintained down atomic bilayer AFM FM (Fe3GeTe2)/AFM (CrPS4)...
Abstract In this study, low‐energy cesium (Cs + ) ion‐induced sputtered fragmentation of poly allyl diglycol carbonate (PADC) was investigated using mass spectrometry. The collision‐induced dissociation mechanism revealed emission various fragments, including monoatomic (H − , C 1 O ), diatomic (C 2 and multiatomic 3 CO species within the Cs ion energy range 1–5 keV. anion current these fragments exhibited a linear increase with rising incident energy, indicating corresponding rise in...
Temperature-dependent electrical and magneto-transport measurements have been performed on devices composed of few layer (4L) graphene grown directly SiO2/Si substrates using the CVD method. An intrinsic energy band-gap 4.6 meV in 4L is observed, which primarily dictates current transport at T <50 K. Unusual temperature dependent electron-hole conduction asymmetry observed >50 K, can be explained framework defect scattering relativistic charge carriers. Magneto-transport reveal a weak...
We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with fabrication freestanding by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality grown sapphire were easily lifted off thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that pulsed operation ammonia flow during was a critical factor films. These films,...
Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on surface properties of molybdenum. X-ray diffractometry (XRD), scanning electron microscopy (SEM), atomic force (AFM) are used structural morphological analysis layers. Vickers' microhardness tester utilized investigate microhardness. Phase shows formation more molybdenum nitride molecules longer nitriding at 2 mbar 3 (1 bar = 105 Pa). A considerable...
Dzyaloshinskii-Moriya interaction (DMI) is shown to induce a topologically protected chiral spin texture in magnetic/nonmagnetic heterostructures. In the context of van der Waals spintronic devices, graphene emerges as an excellent candidate material. However, due its negligible spin-orbit interaction, inducing DMI stabilize topological spins when coupled 3d-ferromagnets remains challenging. Here, it demonstrated that, despite these challenges, sizeable Rashba-type splitting followed by...
We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with fabrication freestanding by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality grown sapphire were easily lifted off thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that pulsed operation ammonia flow during was a critical factor films. These films,...